1N5637A SEMICON Search Results

Contextual Info: 1N5637A+JAN Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage15 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage13 I(PPM) Max.(A)Pk.Pulse Current71.0

Contextual Info: 1N5637A+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage15 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage13 I(PPM) Max.(A)Pk.Pulse Current71.0

Contextual Info: 1N5637A Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage15 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage13 I(PPM) Max.(A)Pk.Pulse Current71.0

Contextual Info: 1N5637A+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage15 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage13 I(PPM) Max.(A)Pk.Pulse Current71.0

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N5629A thru 1N5665A 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES AVAILABLE IN VOLTAGES FROM 5.8V THRU 171V The NES 1N5629A to 1N5665A series of Silicon Voltage Transient Suppressor diodes are designed to protect airborne and telephone electronic equipment from

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N5629A thru 1N5665A 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES AVAILABLE IN VOLTAGES FROM 5.8V THRU 171V The NES 1N5629A to 1N5665A series o f Silicon Voltage Transient Suppressor diodes are designed to protect airborne and telephone electronic equipment from

1N5629a

Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Contextual Info: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

IN5629A

Abstract: IN5665A 1NS645A IN5639A 1N5638A IN5637A in5664a 1N5629A 1N5630A 1N5631A
Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N5629A thru 1N5665A 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES AVAILABLE IN VOLTAGES FROM 5.8V THRU 171V The NES 1N5629A to 1N5665A series of Silicon Voltage Transient Suppressor diodes are designed to protect airborne and telephone electronic equipment from

1N5656A JANTX

Contextual Info: DIGITRON SEMICONDUCTORS 1N5629-1N5665 TRANSIENT ABSORPTION ZENER MAXIMUM RATINGS Operating and Storage Temperature -65 to +175°C DC Power Dissipation 1 watt @ TL ≤ 125°C, 3/8” from body Thermal Resistance 1500 watts for 10/1000 s with repetition rate of 0.01 @

1N5665A

Abstract: 1N5646A 1N5653A
Contextual Info: 1N5629A thru 1N5665A 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES AVAILABLE IN VOLTAGES FROM 5.8V THRU 171V The NES 1N5629A to 1N5665A series of Silicon Voltage Transient Suppressor diodes are designed to protect airborne and telephone electronic equipment from

1n5654a

Abstract: 1n5644a
Contextual Info: Back to Zener Diodes 1N5629A thru 1N5665A 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES AVAILABLE IN VOLTAGES FROM 5.8V THRU 171V The NES 1N5629A to 1N5665A series of Silicon Voltage Transient Suppressor diodes are designed to protect airborne and telephone electronic equipment from

NEC 14324

Contextual Info: SEMICON COMPONENTS INC 5ÔE D • 0135157 00007TÌ i ■ T"-// — -2.5 SUPP1 M 'E Qfil DESCRIPTION FEATURES: . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage

Contextual Info: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.

STR F 5653

Abstract: STR 5664 STR G 5653
Contextual Info: G EN L in str / ^ ^ power SLE General ^ Semiconductor • Industries, Inc. D 3ÔT Ü1 3 7 T-K -Z3 GGGH^GT 250 I RANSZORB T R A N S IE N T VO LTA G E SUPPRESSORS 1N5629 THRU 1N5665A FEATURES APPLICATION CONT'D > 1500 watts Peak Pulse Power dissipation i Available in ranges from 5.5 to 171

1N5907 JANTX

Abstract: 1N5662A JANTXV 1n5638a 1N5555 1N5558 1N5629A 1N5665A 1N5907 1N5660A 1N5665A JAN
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 2009. INCH-POUND MIL-PRF-19500/500E 24 March 2009 SUPERSEDING MIL-PRF-19500/500D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 1997 INCH-POUND MIL-PRF-19500/500C 8 July 1997 SUPERSEDING MIL-S-19500/500B 19 January 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR

1N5646A JANTX

Abstract: 1N5555UEJ diode 716 1N5645A JANTX 1N5635A
Contextual Info: INCH-POUND MIL-PRF-19500/716 28 April 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2004. INCH-POUND MIL-PRF-19500/500D 5 November 2003 SUPERSEDING MIL-S-19500/500C 8 July 1997 PERFORMANCE SPECIFICATION * SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

What is a TRANSZORB

Abstract: SCL20A 1N6302A 1.5KE 180A keytek* 424 generator SCM120A diode 1.5ke 13A 5643A 1N6042A 5kp28a, 15000W reco relay
Contextual Info: TransZorb PROVIDING PROTECTION FOR • Telecommunications • Military • Computer • Industrial • Test & Instrumentation • Medical • Automotive GENERAL SEMICONDUCTOR INDUSTRIES, INC. A TransZorb® is a class o f diode, tw o term inal, that is designed

Contextual Info: im ia s T o t. . TransZorb QUICK REFERENCE GUIDE PROVIDING PROTECTION FOR :• • Telecommunications &:7S$ ' • Military ÌH • Computer • Industrial ■\. '’ • . .Test & Vyt. I\\ Instrumentation • Medical • Automotive A General Industriès, Inc.

Semicon volume 1

Abstract: HVC-50F s5a1 LTA 902 sx
Contextual Info: Pulse Rated 5W Zener Diode FEATURES • 1200 WATTS PEAK POWER • 5 WATTS @ 75°C AME5IENT • SURGE RATED • LOW FORWARD VO LTAG E DROP • COLD CASE DESIGN (M OLDED) • H IG H TEM PERATURE OPERATION • SPECIAL M A TC H IN G A V A ILA B LE Semicon TZC Zener diodes are high grade Solid State Voltage

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA

1N1743

Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­