1N5625 Specifications
Abstract: 1N5625 1N5625 v LM390
Text: 1N5625 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N5625 Availability Online Store
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1N5625
1N5625
STV3208
LM3909N
1N5625 Specifications
1N5625 v
LM390
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N5624-1N5627 GLASS PASSIVATED RECTIFIER MAXIMUM RATINGS and ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Characteristics Symbol 1N5624 1N5625 1N5626 1N5627 Unit Maximum peak repetitive reverse voltage VRRM 200 400
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1N5624-1N5627
1N5624
1N5625
1N5626
1N5627
MIL-PRF-19500,
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Untitled
Abstract: No abstract text available
Text: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5624,
1N5625,
1N5626,
1N5627
OD-64
MIL-STD-750,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5624,
1N5625,
1N5626,
1N5627
OD-64
MIL-STD-750,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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DIODE 1N5625 V
Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
Text: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5624,
1N5625,
1N5626,
1N5627
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
1N5624
1N5625
DIODE 1N5625 V
vishay 1N5625
DIODE 1N5625
1N5625 diode
1N5625 Specifications
1N5626
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1N5625
Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
Text: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5624,
1N5625,
1N5626,
1N5627
2002/95/EC
2002/96/EC
OD-64
MIL-STD-750,
1N5624
1N5625
1N5625 diode
diode 1n5624
vishay 1N5625
1N5626
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Transistor C107m
Abstract: t25000 SCR TRANSISTOR 8TA41600B T106F1 SCR SC160D TIC106M SCR SC136B Triac Q2006R5 BTA417008
Text: "'ART VJMEEF INDEX Part No. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40Q7 1N4622 1N4732 1N4733 1N4744 1N5225 1N5400 1N5401 1N5402 1N5404 1N5405 1N5625 1N750 2N0918 2N1770 2N1771 2N1772 2N1773 2N1774 2N1775 2N1776 2N1777 2N1778 2N1842 2N1843 2N1844 2N1845
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N40Q7
1N4622
1N4732
1N4733
Transistor C107m
t25000
SCR TRANSISTOR
8TA41600B
T106F1 SCR
SC160D
TIC106M SCR
SC136B Triac
Q2006R5
BTA417008
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1N5624
Abstract: 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
Text: BYW82.BYW86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Controlled avalanche characteristics D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625
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BYW82.
BYW86
BYW82
1N5624
BYW83
1N5625
BYW84
1N5626
BYW85
1N5627
1N5625
1N5627
BYW82
BYW83
BYW84
BYW85
BYW86
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BYW86
Abstract: DIODE 1N5625 V 1N5624 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85
Text: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625
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BYW82.
BYW86
BYW82
1N5624
BYW83
1N5625
BYW84
1N5626
BYW85
1N5627
BYW86
DIODE 1N5625 V
1N5625
1N5627
BYW82
BYW83
BYW84
BYW85
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diode 1n5624
Abstract: 1N5624 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
Text: BYW82.BYW86 Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625
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BYW82.
BYW86
BYW82
1N5624
BYW83
1N5625
BYW84
1N5626
BYW85
1N5627
diode 1n5624
1N5625
1N5627
BYW82
BYW83
BYW84
BYW85
BYW86
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1N5625
Abstract: 1N5405 1n5401 1n5402 1N5404 1N5404 equivalent 1N5406 1N5400 1N5403 CPR2-010
Text: Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 @ TA (oC) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE GPR-1A DO-15 DO-201AD GPR-3A VRRM (VOLTS) 50 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 400 1N5550 1N5624 1N5551 1N5625
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DO-15
DO-201AD
1N5400
CPR2-010
CR2-010
1N5401
CPR2-020
CR2-020
1N5402
1N5550
1N5625
1N5405
1n5401
1n5402
1N5404
1N5404 equivalent
1N5406
1N5400
1N5403
CPR2-010
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Untitled
Abstract: No abstract text available
Text: 1N5625+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)70’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’
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1N5625
Voltage400
Current300u
StyleDO-41
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1N5625
Abstract: 1N5625 v
Text: 1N5624 1N5625 1N5626 1N5627 w w w. c e n t r a l s e m i . c o m SILICON GLASS PASSIVATED RECTIFIERS 5.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5624 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package, designed for general
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1N5624
1N5625
1N5626
1N5627
1N5625
1N5627
1N5625 v
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1N5405
Abstract: 1N5625 1N5400 1N5401 1N5402 1N5403 CPR2-010 CPR2-020 CPR2-040 CR2-010
Text: Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 @ TA (oC) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE GPR-1A DO-15 DO-201AD GPR-3A VRRM (VOLTS) 50 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 400 1N5550 1N5624 1N5551 1N5625
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DO-15
DO-201AD
1N5400
CPR2-010
CR2-010
1N5401
CPR2-020
CR2-020
1N5402
1N5550
1N5405
1N5625
1N5400
1N5401
1N5402
1N5403
CPR2-010
CPR2-020
CPR2-040
CR2-010
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1N5624
Abstract: diode 1n5624 1N5625 1N5625 v 1N5626 DIODE 1N5625 V 1N5627
Text: HARRIS SENICON] S E CT OR i l i H a <è 3 semiconductor böE r r i s D H 43 GS 27 1 D05 0 3D 5 123 H H A S 1 N 5 6 2 4 , 1 N 5 6 2 5 j N 5 6 2 6 , 1 N 5 6 2 7 3A, 200V - 800V Diodes December 1993 Features Package AL-3 TOP VIEW • High Temperature Metallurgically Bbonded, No Com
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43GS271
D0503D5
1N5624,
1N5625
1N5626,
1N5627
MIL-STD-19500
1N5625,
1N5624
diode 1n5624
1N5625
1N5625 v
1N5626
DIODE 1N5625 V
1N5627
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1N5625
Abstract: 1n5627
Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of
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1N5624
1N5627
MIL-S-19500
25any
18-Jul-08
1N5625
1n5627
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1N5625
Abstract: 1N5624
Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of
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1N5624
1N5627
MIL-S-19500
08-Apr-05
1N5625
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in5626
Abstract: IN5627 IN5624 1N5625 SPD5628 C107V
Text: SOLID STATE DEVICES INC 15E D f l A3b b D ll 0001Ô05 2 | r-£>/-/r 1N5624 THRU SPD5628 3 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 F A X S I^I^g ô FEATURES
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1N5624
SPD5628
1N5625
1N5626
IN5627
SPD5628
IN5624
IN5626
C107V
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IN5624
Abstract: in5626 D5043 1N5625 1N5626 1N5625 PIV 1N5624 1N5627 SPD5628 1N5625 v
Text: SOLID STATE DEVICES INC 15E D | ö 3 bL Gll OOOlñDS 2 | 1N5624 THRU SPD5628 3 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS CASE STYLE 14830 Valley View A venue La Mirada. California 90638 213 921-9660 T W X 910-583-4807 F A X 21'’ -921-2396 FEATURES
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OCR Scan
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1N5624
SPD5628
1N5625
1N5626
1N5627
SPD5628
IN5624
in5626
D5043
1N5625
1N5626
1N5625 PIV
1N5627
1N5625 v
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A15D
Abstract: 1N5625 A14F DT230 ge a15a 1n5626 jantx 1N5627 JANTX 1n5626 1N5624
Text: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS
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OCR Scan
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1N5059-62
1N4245-49
1N5624-27
DT230
A14A-P
GER4001-7
A114A-M
A15A-N
A115A-M
DT23CF
A15D
1N5625
A14F
ge a15a
1n5626 jantx
1N5627 JANTX
1n5626
1N5624
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JANTX1N5627
Abstract: JAN1N5624 JANTX1N5624 Ta650 Functional details of ic 4066 1N5626 IN5624 DD0015 diode 1n5624 1N5625
Text: MIL SPECS IC | d 00Q1H5 00135ST 1 |~~ MIL-S-19500/432 U3AF 3 Apr_x i-/\MILITARY SPECIFICATION SEMICONDUCTOR DEVICE“, DIODE, SILICON JAN1N5624 THROUGH JAN1N5627 AND JANTX1N5624 THROUGH JANTX1N5627 1. SCOPE 1.1 Scope - This specification covers the detail requirements for
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MIL-S-19500/432
JAN1N5624
JAN1N5627
JANTX1N5624
JANTX1N5627
QPL-19500,
Q013bl3
MIL-S-1950U/432
5961-F291)
JANTX1N5627
Ta650
Functional details of ic 4066
1N5626
IN5624
DD0015
diode 1n5624
1N5625
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1N5625 PIV
Abstract: 1N5060 BYW55 1N4248 1n5062 1N5061 1N5059 1N5625 byw55 byw56 1N4245
Text: Sinterglass Rectifiers Part No. 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5614 1N5616 1N5618 1N5620 1N5622 G1A G1B G1D G1G G1J G1K G1M BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M
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-65oC
1N4245
1N4246
1N4247
1N4248
1N4249
1N5059
1N5060
1N5061
1N5062
1N5625 PIV
1N5060
BYW55
1N4248
1n5062
1N5061
1N5059
1N5625
byw55 byw56
1N4245
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1N5179
Abstract: 1N5624 1N5625 1N5626 1N5627 A15B A15D A15M A15N
Text: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 ! j 600 § 500 s 400 5 300 z § H O > 200 _l fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK A V ER A G E C U R R E N T -A M P E R E S S T A N D A R D RECTIFIERS SELECTOR GUIDE
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OCR Scan
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1N5179
1N5624
1N5625
053MAX.
1N5624
1N5625
1N5626
1N5627
A15B
A15D
A15M
A15N
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diode 1n5624
Abstract: 1n5624 1N5625 diode
Text: 1N5624 to 1N5627 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications
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Original
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1N5624
1N5627
MILSTD-750,
1N5625
1N5626
1N5627
D-74025
09-Oct-00
diode 1n5624
1N5625 diode
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