Untitled
Abstract: No abstract text available
Text: 1N539xGP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A
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1N539xGP
22-B106
DO-204AC
DO-15)
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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A75 marking code
Abstract: No abstract text available
Text: 1N5391 - 1N5399 CREAT BY ART Pb 1.5 AMPS. Silicon Rectifiers DO-15 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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1N5391
1N5399
DO-15
MIL-STD-202,
1N539X
1N5392-1N5399
A75 marking code
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Untitled
Abstract: No abstract text available
Text: 1N5391G - 1N5399G 1.5AMPS Glass Passivated Rectifiers DO-15 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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1N5391G
1N5399G
DO-15
MIL-STD-202,
260/10s
1N539xG
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Untitled
Abstract: No abstract text available
Text: 1N5391S - 1N5399S 1.5 AMPS Silicon Rectifiers DO-41 Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode
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1N5391S
1N5399S
DO-41
MIL-STD-202,
1N5391S
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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Untitled
Abstract: No abstract text available
Text: 1N5391S thru 1N5399S Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
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1N5391S
1N5399S
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1406002
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Untitled
Abstract: No abstract text available
Text: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode
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DO-41
1N5391S
1N5399S
DO-41
MIL-STD-202,
260/10s
1N539XS
1N5392S1N5399S
1N5391S
50mVp-p
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Untitled
Abstract: No abstract text available
Text: 1N5391G thru 1N5399G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and
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1N5391G
1N5399G
2011/65/EU
2002/96/EC
DO-204AC
DO-15)
AEC-Q101
JESD22-B102
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diode 1n5397
Abstract: 1N5392
Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-15, Molded Plastic
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PDF
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
diode 1n5397
1N5392
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Untitled
Abstract: No abstract text available
Text: 1N5391 - 1N5399 Pb 1.5 AMPS. Silicon Rectifiers DO-15 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode
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1N5391
1N5399
DO-15
MIL-STD-202,
1N539X
1N5392-1N5399
1N5391
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Untitled
Abstract: No abstract text available
Text: 1N5391G - 1N5399G Pb 1.5AMPS Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing
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DO-15
1N5391G
1N5399G
MIL-STD-202,
260/10s
1N539X
1N5393G1N5399G
1N5391G1N5392G
50mVp-p
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Untitled
Abstract: No abstract text available
Text: 1N5391 thru 1N5399 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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PDF
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1N5391
1N5399
2011/65/EU
2002/96/EC
DO-204AC
DO-15)
JESD22-B102
D1406009
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Untitled
Abstract: No abstract text available
Text: 1N5391G - 1N5399G Pb 1.5AMPS Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing
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1N5391G
1N5399G
DO-15
MIL-STD-202,
1N539X
50mVp-p
1N5393G1N5399G
1N5391G1N5392G
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Untitled
Abstract: No abstract text available
Text: 1N5391S - 1N5399S Pb 1.5 AMPS Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability, Low VF High reliability & Current capability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing code & prefix "G" on datecode
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1N5391S
1N5399S
DO-41
MIL-STD-202,
1N539XS
1N5392S1N5399S
1N5391S
50mVp-p
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diode IN 5397
Abstract: 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399
Text: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
diode IN 5397
1N 5392 DIODE
diode in 5392
T3 marking
1N 4000 diode
diode 1n5392
diode 1n5397
1N5392-T3
1N5392-TB
1N5399
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Untitled
Abstract: No abstract text available
Text: 1N5391 – 1N5399 1.5A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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1N5391
1N5399
DO-15,
MIL-STD-202,
DO-15
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IN5395
Abstract: code KE N5392 1N5391 1N5399
Text: s TAÏWAN SEMICONDUCTOR 1N5391 -1N5399 1.5 AMPS. Silicon Rectifiers P-Q-l-5 ¡à RoHS C O M P L IA N C E Features •> * ■> ■> High efficiency, Low VF High current capabilily High reliability H igh su rge cu rre nt capa bi lit/ Low pow er loss G reen com pound with suffix “G " on packing
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1N5391
-1N5399
DO-15
MIL-STD-202.
260vC
1N5399)
IN5395
code KE
N5392
1N5399
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1N5391
Abstract: 1N5399
Text: TAIWAN 1N5391 -1N5399 m . SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers RoHS COMPLIANCE DO-15 .140 3.6 Features_ <• 1.0 (2 5 .4 ) TO M MIN. DIA. H High efficiency, Low VF High current capability High reliability High surge current capability
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OCR Scan
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PDF
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1N5391
-1N5399
DO-15
MIL-STD-202,
1N539X
1N5399)
1N5399
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I251
Abstract: n5392 1N5391S 1N5399S
Text: E TAIWAN 1N5391S - 1N5399S SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers tò RoHS DO-41 COM PLIANCE 1 ,1 C 7 '2 . n .0 8 0 ¡2 .0 ; DW . -J E J - Features o •> ■> ❖ <r 1 .3 ÌZ5.-1I M IN. I-p. h .205 -fi.2} High efficiency. Law VF High current capability
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OCR Scan
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PDF
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1N5391S
1N5399S
DO-41
mil-STD-202.
1N5391STHRU1N5399S)
I251
n5392
1N5399S
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1N5391S
Abstract: 1N5399S
Text: IM 1N5391S - 1N5399S TAIWAN SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features .205 5.2 .166 (4.2) High current capability, Low VF. -0- High reliability & Current capability. High surge current capability. Low power loss, high efficiency.
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OCR Scan
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PDF
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1N5391S
1N5399S
DO-41
1N539XS
MIL-STD-202,
260oC/10
1N5399S)
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1N5391G
Abstract: 1N5399G
Text: is TAIWAN SEMICONDUCTOR 1N5391G - 1N5399G 1.5 AMPS. Glass Passivated Rectifiers DO-15 RoHS COMPLIANCE J R . .1 40 3.6 / 104 (5.6) -Y- 444-Y- MIN DIA. Features H t i Glass passivated chip junction. High efficiency, Low VF High current capability High reliability
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PDF
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1N5391G
1N5399G
DO-15
MIL-STD-202,
1N5399G)
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