1N5347B EQUIVALENT Search Results

2272 t4

Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz

5W zener diode

Abstract: zener diode 12v 0.5 w ZENER DIODE 8.5 V 5W 1N5365B equivalent 1N5341B diode 1N5352B 1n5354b 5w zener 1n5349b 1N5355B
Contextual Info: 1N53xxB 5W Zener Diode .052 1.3 DIA. .048 (1.2) 1.0 (25.4) MIN. .375 (9.5) .335 (8.5) .220 (5.6) DIA. .197 (5.0) 1.0 (25.4) MIN. PRIMARY CHARACTERISTICS VRRM 6.2~200V VF 1.2V TJ max 150°C DO-201AD Dimensions in inches and (millimeters) Features Mechanical Data

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull

J945

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

J115 mosfet

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

1N5333 SERIES

Abstract: 1N5333-5388B ipc 1n5351b 1N5333 1N5333B 1N5388B SMBG5333B SMBG5388B SMBJ5388B 5 watt zener
Contextual Info: 1N5333B thru 1N5388B Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.

j945

Abstract: nippon ferrite MRF177 motorola ups schematic rf push pull mosfet power amplifier 1N5347B ALC 665 MOS FIELD EFFECT TRANSISTOR
Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull

1N53388

Abstract: 1N53388B 1N5333B AC POWER ZENERS 6 WATT 5 watt zener zener diode 3 watt a 220 1N5336 diode 1N5349b
Contextual Info: 1N5333B thru 1N53388B Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.

1N5333 SERIES

Abstract: ipc 1n5351b 1N5333 1N5333-5388B 1N5333B 1N5388B MIL-PRF19500 SMBG5333B SMBG5388B SMBJ5388B
Contextual Info: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.

Diode 1N5333B

Abstract: "Power over Ethernet"
Contextual Info: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.

Contextual Info: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.

J141 mosfet

Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N-Channel Enhancement Mode MOSFETs D e sig n e d fo r b ro a d b a n d c o m m e rc ia l and m ilita ry a p p lic a tio n s up to 4 0 0 M H z fre q u e n c y range. P rim a rily u sed as d rive rs o r o u tp u t a m p lifie rs in p u s h -p u ll

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

MRF161

Abstract: J141 mosfet fet j141
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r

TMS380C16

Abstract: flyback transformer THT pin connections pinout db9 rj45 TMS380 PE65611 ZBF503D-00TA isu ferrite ring 78z022 TMS38054 TMS380C26
Contextual Info: Questions should be faxed to the: TMS380 TECHNICAL SUPPORT LINE 713 274-4027 TEXAS INSTRUMENTS Page 2 PREFACE The TMS38054 is designed with a Constant Gain Phase Detector to provide more margin for successful design of a ring interface and to enable operation over unshielded twisted pair.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation

J945

Abstract: 1N5347B MRF177
Contextual Info: Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull

MRF177

Abstract: 1N5347B transistor RF S-parameters
Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull

MRF177

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz

BA159 equivalent

Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
Contextual Info: Typen - Vergleichsliste Typ Diotec 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5059 1N5059 1N5060 1N5061 1N5062 6A05/G 6A10/G 6A20/G 6A40/G 6A60/G 6A80/G 6A100/G Fam. R R R R R R P600A P600B P600D P600G P600J P600K P600M R R R R R R R 1B005 1B01 1B02

IN5363B

Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Contextual Info: Cross Reference Every care has b een taken in compiling this cross referen­ ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any