MRF177M Search Results

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N-Channel Enhancement Mode MOSFETs D e sig n e d fo r b ro a d b a n d c o m m e rc ia l and m ilita ry a p p lic a tio n s up to 4 0 0 M H z fre q u e n c y range. P rim a rily u sed as d rive rs o r o u tp u t a m p lifie rs in p u s h -p u ll

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

2272 t4

Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz

MTA2N60E

Abstract: MRF177M MTA2955 MTA4N60E MTA30N06E IN402 MTA4N50E CASE221D-02 MTA8N10E MTA15N06
Contextual Info: - 278 - f 1M € % % ±£ ft Vd s or Vd g V Vg s loss Ig s s m (A) th) Vg s (nA) Vg s (V) Vd s (V) ( M A) Ve s = Vg s (Ta=25‘ C) 14 Io(on) Ciss g fs Coss Crss Vg s =0 (*typ) (*typ) (max) (max) (pF) (pF) (max) Id (nA) (V) (V) ft R Ds(on) max min * /CH * /CH