1N5194
Abstract: No abstract text available
Text: FEATURES 1N5194 • • • • • 1N5194 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:
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1N5194
1N5194
MIL-PRF-19500/118
500mW
200mA
MILPRF-19500/118
DO-35
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1N5196
Abstract: 1N5194 JANTX 1N5194 1N5195
Text: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA
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1N5194
1N5195
1N5196
MIL-PRF-19500/118
100mA
IN5194
IN5196
1N5196
1N5194 JANTX
1N5194
1N5195
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1N5194
Abstract: 1N5195 1N5196
Text: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA
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1N5194
1N5195
1N5196
MIL-PRF-19500/118
100mA
IN5194
IN5196
1N5194
1N5195
1N5196
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1N483B
Abstract: 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR
Text: INCH-POUND MIL-PRF-19500/118J w/AMENDMENT 1 11 July 2010 SUPERSEDING MIL-PRF-19500/118J 27 March 2008 The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 October 2010. PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/118J
1N483B,
1N485B,
1N486B,
1N5194,
1N5194UR,
1N5194US,
1N5195,
1N5195UR,
1N483B
1N485B
1N486B
1N5194
1N5194UR
1N5195
1N5195UR
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Untitled
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/118H 19 July 2007 SUPERSEDING MIL-PRF-19500/118G 22 June 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,
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MIL-PRF-19500/118H
MIL-PRF-19500/118G
1N483B,
1N485B,
1N486B,
1N5194,
1N5194UR,
1N5194US,
1N5195,
1N5195UR,
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1N5194
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118
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MIL-PRF-19500/118
1N5194
500mW
200mA
MIL-PRF19500/118
DO-35
LDS-0031
1N5194
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IC 7447 A
Abstract: 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B
Text: Standard Recovery Rectifiers Part Number 1N662 JAN1N662 1N663 JAN1N663 MT5102 MT5103 MT5100 MT5101 MT5139 1N483 1N483A MT5140 1N485 1N3595-1 1N3595US 1N3595US-1 JAN1N3595-1 JAN1N3595US-1 JANS1N3595-1 JANTX1N3595-1 JANTX1N3595U JANTXV1N3595JANTXV1N3595 1N5194
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DO-35
IC 7447 A
7447 spec sheet
JAN1N486B
JAN-TX1N486B
JANTX1N486B
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DSAIH0002559
Abstract: No abstract text available
Text: DO-35 High Voltage I Current Use Advantages 1N5194 thru 1N5196 I Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.
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DO-35
1N5194
1N5196
DO-213AA
1N5195
200mAdc,
1N5194/95/96
DSAIH0002559
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BKC Semiconductors
Abstract: No abstract text available
Text: DO-35 High Voltage I Current Use Advantages 1 1N5194 thru 1N5196 Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.
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DO-35
1N5194
1N5196
DO-213AA
1N5195
200mAdc,
1N5194/95/96
BKC Semiconductors
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q292
Abstract: 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e
Text: B K C INTERNATIONAL 30E D • 117*Hfl3 D0G0350 1 « T ' 0 \ - 0 \ BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, M A 01841 TEL NO. 508 681-0392 EN GI N E E R I N G D A T A SHEET TYPE 1N5194 M E T A L L U R G I A L L Y BONDED, SI LICON PLANAR DIODE, DO UB LE PLUG CO NS TR UC TI ON
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D0G0350
1N5194
200mA
250mW
100mA
4031-B
MIL-STD-750
q292
100C
1N3595
1N3595-1
1N5194
1M3595-1
BKC International
MIL-STD-202 METHOD 208
ir2150e
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sol 4011 be
Abstract: 1N4866 in485b 1N483B 1N485B 1N486B 1N5194 1N5195 1N5196
Text: MIL SPECS ICJDDD01ES QDDDÛ31 5 T T n c h -p o u n d T MIL-S-19500/118D AMENDMENT 1 28 April 1989 MILITARY SPECIFICATION S E M I C O N D U C T O R DE V I CE , DI OD E, S I L I C O N T Y PE S 1N 483B, 1 N 4 8 5 B , 1N 486B, 1N 5194, 1N 5195, 1 N 51 96 JAN, J A N T X , J A NT X V , AND J A N S
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MIL-S-19500/118D
1N483B,
1N485B,
1N486B,
1N5194,
1N5195,
1N5196
MIL-S-19500/llfiD
sol 4011 be
1N4866
in485b
1N483B
1N485B
1N486B
1N5194
1N5195
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Zener Diode 4148
Abstract: zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 IN4444 4148 zener diode 4148 ZENER
Text: B K C INTERNATIONAL □ 3E D | 1 1 7 3 r/HJ 1 W SILICON ZENER DIODES 1N4728 through I > .I Ï Ü Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation ELECTRICAL CHARACTERISTICS DO-41 500mW 3.33 mW/°C ,ii9* mim ait
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DQQQ271
1N4728
1N4752
500mW
DO-41
1N5194
1N5195
1N5196
Zener Diode 4148
zener T 4148
ZENER 4148
T 4148 zener
ZENER diode t 4148
5 volts zener diode 4148
zener diode in 4148
IN4444
4148 zener diode
4148 ZENER
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DIODE 1N649
Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
Text: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V
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1N270
1N276
1N277
1N645/1N645-1
1N647/1N647-1
1N746A-1
1N759A-1
1N914
1N962B-1
1N973B-1
DIODE 1N649
1n41481 zener diode
diode 1N645
1N4148-1 JAN
1N5619 JAN
1N270 JAN
diode 1n4454
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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