1N413B Search Results

1N412B

Abstract: 1N411B 1N413B 1N411B-1N413B
Contextual Info: 1N411B-1N413B High Current Rectifier VRRM = 50-200V, IF AV = 100 A ,VF = 1.2V Symbol A K Cathode to Stud Symbol Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Symbol Parameter 1N411B 1N412B 1N413B Unit

1N1398

Abstract: 1N1399 1N1396 1N1397 1N2426 1N2427 1N3139 1N3140 1N3288 1N411B
Contextual Info: Silicon Power Rectifier N32 88—1N3297 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F -3 A 2. Full th re ad s within 2 1 /2 threads 3. Standard p olarity; Stud is Cathode Reverse p olarity; Stud is Anode

1N413B

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1/ 2 threads 3. Standard polarity: Stud is Cathode Reverse polarity: Stud is Anode

di 437

Abstract: 1n3921
Contextual Info: Silicon Power Rectifier S / R 4 2 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA Notes: 1. 3 / 8 - 2 4 U N F -3 A CC 1 1.050 - 4.30 .610 .213 - .344 .276 .465 - 1.060 1.166 4.70 .640 .233 .745 .373 .286

1n3291s

Contextual Info: Silicon Power R e c t i f i e r Dim. Inches M illim e te r M inim um M axim um A B C D F G H J K M R S M inim um M axim um - - - - 1.0 4 0 1.0 6 0 1.166 4 .6 5 .6 4 0 .2 3 3 .7 4 5 .3 7 3 .2 8 6 .6 7 0 .8 5 0 .120 2 6 .6 7 2 6 .9 2 29.61

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is Cathode Reverse polarity. Stud is Anode

S4290

Abstract: 1N2437 IN139 s4205 1N1397 1N2426 1N2427 1N2436 1N3139 1N411B
Contextual Info: Series 42 I B B Avalanche Silicon Power Rectifiers E L E C T R IC A L C H A R A C T E R IS T IC S : M a x im u m A v e ra g e F o r w a r d C u rre n t, S in g le P h a se H a lf W a v e DC R a tin g a t 1 3 0 ° C . C a s e T e m p e ra tu re . 125 am p e re s

brown Boveri diode

Abstract: BROWN BOVERI N2427 N1403 1N4878 N3294 S4220 DIODE BBC N413B R42120
Contextual Info: BROWN BOVERI -FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers BBC G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 727 Postfach 200, D -6 84 0 Lam pertheim Brochure Order No.

Contextual Info: Silicon Power Rectifier S/R42 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C F G H J K M R T AA Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity; Stud Is Cathode Reverse polarity: Stud Is Anode

1N1399

Abstract: 1N1396 1N1397 1N2426 1N2427 1N3139 1N3140 1N3288 1N3297 1N411B
Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity; Stud is Cathode Reverse polarity: Stud is Anode

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

IN4054R

Abstract: IN4048R IN4045 1N2131 IN3294 B 1186a 1N1202 1N1201 IN4056R IN4048
Contextual Info: S E M IC O N D U C T O R S IN C CHE D f fil3 b tiS 0 Q DO DSbB 0 | Silicon Power Rectifiers 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582, 1N2492 1N1343, 1N1343A, 1N1343B

1N314

Abstract: 1N4588
Contextual Info: Standard Recovery Rectifiers Part Number Microsemi Division Package Outline Type Mil Spec Data Sheet ID IO lA-i-ps Microsemi VR IFSM VC *5 ID Volt») (Amps) (Volts) IR (uA) ; trr (nsec) 1N3296A 1N3297 1N3297A 1N1660 1N1661 1N1662 1N1663 1N1664 1N1665 1N1666

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any