1N4345-1N1219
Abstract: 0333A 1N4216 1N4247 1N4248 1N4249 JANTXV1N4245
Text: RECTIFIERS 1N4 2 4 5 -1N 4249 J A N ,J ANTX & JANTXV Military Approved, 1 Amp, General Purpose FEATURES • Qualified to MjL-S-19500/286 • Surge Rating: 25A • PIV: tolOOOV • Controlled Avalanche DESCRIPTION This series of general purpose power rectifiers are available as JAN, JAN TXor
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1N4245-1N4249
MIL-S-19500/286
JANTXV1N4245
1N4216
1N4247
1N4248
1N4249
150-C
1N434S
1N4345-1N1219
0333A
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PDF
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1N4719
Abstract: 1N4720 1N5003 1n4719-1n4725 1N4723 1N5002 1N4722 1N4997 1N472 1N5000
Text: Silicon Rectifiers 1N4 7 1 9 -1 N4725,1N 4 9 9 7 -1 N5003 Dim. Inches Minimum ‘I t A B C D E F G H M illim e te r Maximum Minimum - .450 .980 - .046 .300 .056 .350 -.960 .031 .145 -.035 .165 - Maximum Notes 11.43 - Dia. 24.89 1.17
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4719-1N4725
4997-1N
1N4719â
1N4725
1N4997-1N5003
1N4719,
1N4997
1N4720,
1N4998
1N4721,
1N4719
1N4720
1N5003
1n4719-1n4725
1N4723
1N5002
1N4722
1N472
1N5000
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diode 1n4
Abstract: 1N4 MARKING 1N4001S 1N4007S A-405 006s
Text: LESHAN RADIO COMPANY, LTD. 1N4001S thru 1N4007S 1.Feature General Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage
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1N4001S
1N4007S
MIL-STD-750,
50mVp-p
diode 1n4
1N4 MARKING
1N4001S
1N4007S
A-405
006s
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PDF
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1N4008G
Abstract: No abstract text available
Text: 1N4001G thru 1N4008G General Purpose Plastic Rectifiers Reverse Voltage 50 to 1200V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique
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1N4001G
1N4008G
DO-41,
MIL-STD-750,
DO-201ADç
D0-201AD
1N4008G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1N4001E thru 1N4007E 1.Feature General Purpose Plastic Rectifiers * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage
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1N4001E
1N4007E
MIL-STD-750,
DO-41
DO-15
DO-201AD
26/tape
DO-201ADç
DO-201AD
52/tape
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003G
Abstract: 1N4001G 1N4007G
Text: 1N4001G thru 1N4007G General Purpose Plastic Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique
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1N4001G
1N4007G
DO-41,
MIL-STD-750,
50mVp-p
003G
1N4007G
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PDF
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A-405
Abstract: No abstract text available
Text: 1N4001E THRU 1N4007E GENERAL PURPOSE PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A FEATURE A-405 Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C/10sec/0.375”lead length at 5 lbs tension
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1N4001E
1N4007E
C/10sec/0
UL-94
A-405
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code 1n4
Abstract: 003G 1N4001G 1N4007G
Text: LESHAN RADIO COMPANY, LTD. 1N4001G thru 1N4007G 1.Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability
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1N4001G
1N4007G
DO-41,
MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
code 1n4
003G
1N4007G
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PDF
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DIODE BZG 03c
Abstract: DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG
Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.
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1N4148
BZX55C.
BZX85C.
OT143
OT143R
OT323
OT343
OT343R
OT363
DIODE BZG 03c
DIODE BZX 85c
marking code vishay label
1N4148 do214ac
KZE sot23
Vishay diodes code marking
1N47A
1N5 diode
1N52B
DIODE BZG
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1A DIODE 1N
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC 15E D OOGIÖDT S | T - o 1N4942 THRU 1N4948 1 AMP FAST RECOVERY RECTIFIER 200-1000 VOLTS 3 - f3 » g ly ll 14830 Valley View Avenue La Mirada, California 90638 213 921-9660
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1N4942
1N4948
1N4943
1N4946
ST4942
1N494haracteristics
500ma,
250ma)
1A DIODE 1N
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N4719
Abstract: 1N4719 1N5002 1N4719A 1N4720 1N4721 1N5001 1N4725 ML8536 1N4722
Text: Silicon Rectifiers N4 7 1 9 - 1 N4725,1 N4 9 9 7 - 1 N5003 Dim. Inches Minimum A B C D E F G H ° 1 1 A E 1N4719—1N4725 - _ Maximum Notes - 11.43 24.89 - Dia. .980 .046 .300 .056 .350 1.17 - 7.62 1.42 8.89 Dia. Dia. 24.38
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N4719-1N
4997-1N
1N4719â
1N4725
1N4997-1N5003
1N4719,
1N4997
1N4720,
1N4998
1N4721,
N4719
1N4719
1N5002
1N4719A
1N4720
1N4721
1N5001
1N4725
ML8536
1N4722
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1N4933G
Abstract: 1N4934G 1N4935G 1N4937G DO-204AL
Text: _1N4933G thru 1N4937G 5 Y m se m i s e m i c o n d u c t o r ^ ^ mP Glass Passivated Fast Recovery Rectifiers Voltage Range 50 to 600 Volts Forward Current 1.0 Ampere Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Plastic package has Underwriters Laboratories Flam m ability
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OCR Scan
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1N4933G
1N4937G
MIL-S-19500
DO-204AL
1N4934G
1N4935G
1N4937G
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4933 THRU SEM ICON DU CTOR 1N4937 TECHNICAL DATA P Q R W A S D IN T E R N A T IO N A L E L E C T R O N IC S L ID . TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT - 1.0 Ampere - FEATURES * Lew C0$1 * Low leakage
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1N4933
1N4937
DO-41
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N4935
Abstract: 1N49
Text: 1N4933G Thru 1N4937G Fast Recovery Rectifiers Glass Passivation Junction .034 0.9 DIA. .028 (0.7) 1.0 (25.4) MIN. .205 (5.2) .165 (4.2) .107 (2.7) DIA. .080 (2.0) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. DO-41 Dimensions in inches and (millimeters) IF 1A
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Original
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1N4933G
1N4937G
DO-41
2002/95/EC
DO-41
MIL-STD-202,
N4935
1N49
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12V PIV RATING DIODE
Abstract: 1N4942 1N4944 1N4946
Text: JAN, JANTX, & JANTXV 1N4942 JAN, JANTX, & JANTXV 1N4944 JAN, JANTX, & JANTXV 1N4946 RECTIFIERS Military Approved, 1 Amp, Fast Recovery FEATURES D E SCRIPTIO N • Q ualified to M lL-S-19500/359 • Surge Rating: 15A • P!V: to 600V These fa s t recovery rectifiers are su ita b le
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1N4942
1N4944
1N4946
MlL-S-19500/359
1N494Ã
12V PIV RATING DIODE
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PDF
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1N4005GI
Abstract: 1N4007GL A4051
Text: • IT P W 1N4001G thriI 1N4007G 1N4007GL 11 p o w e r LITEW LI SEMICONDUCTORS 1N4001GL VO LTAGE 1 AMP. GLASS PASSIVATED JUNCTION PLASTIC StUCÛN RECTIFIERS RANGE 5 0 t o 1 0 0 0 V o lts CURRENT 1 .0 A m p e re 1N4000GL T Glass passivated ch ip • L o w leakage
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1N4001GL
1N4001G
1N4007G
1N4007GL
1N4000GL
DO-41
1N4003GL
1N4004GL
1N4005GI
1N4005G
1N4007GL
A4051
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PDF
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FBU4K
Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
Text: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL
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1N4001
N4001
1N4001G
4001L
1N4002
1N4002G
1N4002GL
1N4002L
1N4003
FBU4K
FBU4J
PBL302
1DQ04
2FBP06
FBU4G
1N4007 FAGOR
FBU8K
KBPC251OW
1IN5406
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PDF
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ADP1047-300-EVALZ
Abstract: Analog Devices DIODE 1334 smd diode 1334 DIODE+1334+smd 1334 diode SMD B4H 3H DIODE smd
Text: ADP1047 300 Watt Evaluation Kit ADP1047-300-EVALZ PRD 1334 FEATURES Boost PFC topology providing high power factor and low THD Protection features for AC line input and high voltage output High efficiency I2C serial interface to PC Software GUI Programmable digital filters
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ADP1047
ADP1047-300-EVALZ
ADP1047-300-EVALZ
Analog Devices
DIODE 1334 smd
diode 1334
DIODE+1334+smd
1334 diode
SMD B4H
3H DIODE smd
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PDF
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r04c
Abstract: 1N3909 1N3910 1N3911 1N3912 1N3913 1N4723 MR1396 1N4Q01 43fl
Text: MOTOROLA SC DIODES/OPTO bHE L,3b7255 00flt,23L, 75*1 D 1N3909 thru 1N3913 MR1396 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N3911 and M R1396 are Motorola Preferred Devices Designers Data Sheet FAST R E C O V E R Y POWER R E C T IF IE R S S TU D M O U N T E D
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3b7255
00flt
1N3909
1N3913
MR1396
1N3911
MR1396
r04c
1N3910
1N3912
1N4723
1N4Q01
43fl
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PDF
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lN34A
Abstract: Germanium itt
Text: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap
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1N34A
1N38A
1N388
lN34A
Germanium itt
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PDF
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stc t1a 250v
Abstract: BV1500 CSM 39-071B flyback 150W schematic diagram smps circuit diagram of 150W step down T34836 pc817 emitter follower STTH10 AN2131 150w L5991D
Text: AN2131 APPLICATION NOTE HIGH POWER 3-PHASE AUXILIARY POWER SUPPLY DESIGN BASED ON L5991 AND ESBT STC08DE150 1. INTRODUCTION This application note deals with the design of a 3Phase auxiliary power supply for 150W dual output SMPS, using the L5991 PWM driver and
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Original
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AN2131
L5991
STC08DE150
STC08DE150
UC384X
stc t1a 250v
BV1500
CSM 39-071B
flyback 150W schematic diagram
smps circuit diagram of 150W step down
T34836
pc817 emitter follower
STTH10
AN2131 150w
L5991D
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PDF
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70413080
Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919
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2N3391
SPS-953
MPS-8097,
2N6520
MPS-A18,
2N6539,
SK-3919
2N4249
SPS-690,
PN-2907A
70413080
70473180
SAC-187
Motorola 70483180
70483100
70484200
70487478
70484140
SJ-6357
70483180
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PDF
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AD637
Abstract: AD637J AD637JD AD637K AD637KD AD637S AC DC supplies MEAN WELL diagrams vm200
Text: ANALOG DEVICES INC 5JE II AN ALO G DEVICES FEATURES High Accuracy 0.02% Max Nonlinearity, 0 to 2V RMS Input 0.10% Additional Error to Crest Factor of 3 Wide Bandwidth 8MHz at 1V RMS Input 600kHz at lOOmV RMS Computes: True RMS Square Mean Square Absolute Value
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OCR Scan
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AD637
600kHz
AD711,
AD637.
100kHz.
AD637J
AD637JD
AD637K
AD637KD
AD637S
AC DC supplies MEAN WELL diagrams
vm200
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PDF
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rt2528
Abstract: DIODE BA159 transistor buv 90 zener diode 1n400 2018a40 2018a ZENER 1N4 Datasheet TEA2019 BYW98-50 TEA2018A
Text: APPLICATION NOTE TEA2018A - TEA2019 FLYBACK SWITCH MODE POWER SUPPLY IMPLEMENTATION BY J-Y. COUET & T. PIERRE SUMMARY Page I INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II III
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Original
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TEA2018A
TEA2019
TEA2018A.
018A-68
rt2528
DIODE BA159
transistor buv 90
zener diode 1n400
2018a40
2018a
ZENER 1N4 Datasheet
BYW98-50
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PDF
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