1N DIODE DATA BOOK Search Results

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

in5347

Abstract: in5338 1N5844 IN5354 IN5363 Diode IN5339 in5342 IN5364 IN5339 1N5882
Contextual Info: Zener Voltage Zener Type No. i t I zt Volts @ mA Max. Zener Impedance @ Izr Ohms 1N 5248 l,? 1N 5249 •») 1N 5 2 5 0 ('») 18.0 19.0 20.0 7.0 6.6 6.2 21.0 23.0 25.0 1N5251 (|?) 1N 5252 1” » 1N 5253 1” ) 22.0 24.0 25.0 5.6 5.2 5.0 29.0 33.0 35.0 1N 5 2 5 4 M’ )

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

zener diode catalogue

Abstract: 5252B
Contextual Info: Diodes 500mW Zener Diode 1N5200B Series ^•This product is marketed only in countries other than Japan. •A p p lic a tio n • E x te rn a l dim ensions Units: mm Constant voltage control •F e a tu re s 1)Designed for compact surface mounting (LL-34)

IN5363

Abstract: IN5338 in5364 IN5342 in5347 IN5358 IN5339 in5337 IN5349 in5353
Contextual Info: Zener Voltage Zener Type No. i t I zt Volts 1N 5248 l,? 1N 5249 •») 1N 5250 ('») 1N5251 1N 5252 1N 5253 1N 5254 1N 5255 1N 5256 (|?) 1” » 1” ) M’) M t” ) 1N 5257 in) 1N 5258 I''>] 1N 5259 1191 1N 5260 1N 5261 1N 5262 1N 5263 IN 5 2 6 4 1N 5265

NEC C 324 C

Abstract: marking 222 zener diode MARKING AB2 zener diode ab RD10ES2 7es marking NEC zener diode 35 series RD11ES zener rd9.1esb2 RD15ES
Contextual Info: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.

zener diode rd20e b2

Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.

marking AB2

Abstract: diode zener 1N 398 nec 2563 7es marking RD15ES RD10ES RD11ES RD12ES RD13ES RD16ES
Contextual Info: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

RD10JS

Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
Contextual Info: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

RD5.6

Abstract: RD10ES RD11ES RD12ES RD13ES RD15ES RD16ES RD39ES RD10ES-2 suffix renesas
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC NNCD4.7A

Abstract: IEC1000 IEC1000-42 IEC1000-4-2 NNCD10A NNCD11A NNCD12A MEI-1201
Contextual Info: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3A to NNCD12A ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE This product series is a diode developed for E.S.D (Electrostatic PACKAGE DIMENSIONS Discharge) noise protection. Based on the IEC1000-4-2 test on

ETC 529 diode

Abstract: NEC DO-35 IEC1000 IEC1000-42 IEC1000-4-2 NNCD10B NNCD11B NNCD12B MEI-1201 NEC NNCD4.7B
Contextual Info: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3B to NNCD12B ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE This product series is a diode developed for E.S.D (Electrostatic PACKAGE DIMENSIONS Discharge) noise protection. Based on the IEC1000-4-2 test on

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

BN35-3H103FB-50

Contextual Info: User's Guide SLUU342A – October 2009 – Revised March 2012 bq3060EVM-001 SBS 1.1 Compliant Advanced Gas Gauge Battery Management Solution EVM This evaluation module EVM is a complete evaluation system for the bq3060/bq29412 battery management system. The EVM includes one bq3060/bq29412 circuit module. The circuit module includes

rd 62 nec zener

Abstract: NEC Zener diode product List NEC Zener diode RD3.0E Zener Diode B1 9 Zener Diode B1 2 RD13E B2 Zener RD22E B3 5.6 zener b3 zener
Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES PACKAGE DRAWING Unit: mm DESCRIPTION These products are zener diodes with an allowable φ 0.5 25 MIN. dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure.