1MX32 Search Results

s - ck5t

Abstract: CA52
Contextual Info: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

KM416C1200AJ

Abstract: ra57
Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

KMM5321000BV-7

Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns

WS1M32V-XG3X

Contextual Info: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins

Contextual Info: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8

WS1M32-XG3X

Contextual Info: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as

pc133 sdram

Abstract: HYM4V33100DTYG-75
Contextual Info: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one

Contextual Info: W PF 1 M 3 2 X -9 0 P SC 5 1Mx32 FLASH SIMM PRELIMINARY * FEATURES • ■ Access Time of 90ns ■ 100,000 Erase/Program Cycles Packaging: ■ Organized as 1Mx32 • 80-pin SIM M ■ Commercial Tem perature Range • The module is manufactured w ith four 1Mx8 CMOS flash

smd CODE L4

Abstract: WF1M32-XXX
Contextual Info: a WF1M32-XXX WHITE /MICROELECTRONICS 1Mx3212V FLASH MODULE, SMD 5962-94613 FEATURES • A ccess Tim es of 1 0 0 ,150ns ■ Packaging: • • ■ O rganized as 1M x32, user co n fig u ra b le as 2M x1 6 or 4M x8. ■ C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Fianges

Contextual Info: a WS1M32-XG3X WHITE /MICROELECTRONICS 1Mx32 SRAM MODULE FEATURES • A c c e s s T im e s of 17, 20, 25ns Low Pow er CM OS ■ 84 lead, 28mm CQFP, Packag e 511 Built-in Decoupling Caps and M u ltip le Ground Pins fo r Low Noise Operation ■ Organized as tw o banks of 5 1 2K x3 2 , U ser C o nfig urable as

Contextual Info: a WPS1M32V-XXC M/HITE /MICROELECTRONICS 1Mx32SRAM 3.3V MODULE ADVANCED* FEATURES • ■ A ccess Tim es of 17, 20, 25, 35ns ■ C om m ercial Tem pe ratu re Range Packaging ■ T T L C o m p a tib le Inputs and O utputs • M o d u le is m a nufa cture d w ith eig h t 1M x4 SRAM m em ory

Contextual Info: a WF1M 32B-XXX5 WHITE /MICROELECTRONICS 1Mx325V/12V FLASH MODULE PRELIMINAR/* FEATURES • Access Times of 100,120ns Organized as 1Mx32, user configurable as 2Mx16 or4Mx8. ■ Commercial, Industrial and Military Temperature Ranges Packaging: • 66-pin, PGA Type, 1.185 inch square, Hermetic

WS1M32V-XG3X

Contextual Info: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins

Flash SIMM 80

Abstract: E28F008SA EDI7F341MC 80pin-SIMM SIMM 80 jedec
Contextual Info: EDI7F341MC White Electronic Designs 1Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages

WEDF1M32B-XXX5

Abstract: WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 1m 0880
Contextual Info: White Electronic Designs WEDF1M32B-XXX5 ADVANCED* 1Mx32 5V Flash Module FEATURES Access Times of 70, 90, 120ns Packaging: Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic HIP Package 401 Commercial, Industrial and Military Temperature

Contextual Info: HYM41V331OODTYG 1Mx32, 1Mx16 based, PC133 DESCRIPTION T he H ynix H Y M 4V33100D TY G Series are 1M x16bits Synchronous DRAM M odules. T he m odules are com posed o f tw o 1M x16bits CM O S S ynchronous DR AM s in 400m il 50pin TSOP-H package, on a 132pin glass-epoxy printed circuit board. T w o 0.22uF and one

K3P6C2000B-SC

Contextual Info: K3P6C2000B-SC CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access

Contextual Info: KM23C32205BSG CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access

Contextual Info: DRAM MODULE KMM332V104AT KMM332V104AT Fast Page Mode 1Mx32 DRAM DIMM Low Power, 4K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM332V104AT is a 1M bit x 32 FEATURES • Performance Range: Dynamic RAM high density memory module. The Samsung KMM332V104AT consists of two CMOS

Contextual Info: KMM332F104AT-L KMM332F124AT-L DRAM MODULE KMM332F104AT-L / KMM332F124AT-L Fast Page with EDO Mode 1Mx32 DRAM DIMM, 1Mx16, Low Pow er, 4K & 1K Refresh, 3.3V GEN ER AL FEATURES DESCRIPTION The Samsung KMM332F10 2 4AT is a 1M bit x 32 Dynamic RAM high density memory module. The

ce1h

Contextual Info: HANBit HMF1M32M4V Flash-ROM Module 4MByte 1Mx32Bit , 72Pin-SIMM, 3.3V Design Part No. HMF1M32M4V GENERAL DESCRIPTION The HMF1M32M4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 8bit FROM mounted on a 72 -pin, single -sided, FR4-printed circuit

Contextual Info: HY5DU323222QP 32M 1Mx32 DDR SDRAM HY5DU323222QP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / May. 2004

Contextual Info: M/HITE MICROELECTRONICS 1Mx32 SRAM 3.3V MODULE WPS1M32V-XXC ADVANCED* FEATURES • A cce ss T im e s o f 17, 20, 25, 35ns ■ C om m ercial Te m p e ra tu re Range ■ Packaging ■ TTL C om p a tib le Inputs and O utputs • M o d u le is m a n u fa c tu re d w it h e ig h t 1 M x 4 S R AM m em ory

Contextual Info: M/HITE MICROELECTRONICS 1Mx32 SRAM 3.3V MODULE WPS1M32V-XXC ADVANCED* FEATURES • A c c e s s T i m e s o f 17, 20, 25, 3 5 n s ■ C o m m e r c ia l T e m p e r a t u r e Range ■ P a c k a g in g ■ TTL C o m p a t i b l e In p u ts and O u tp u t s