NT56V1616A0T-7
Abstract: NT56V1616A0T-8
Text: NT56V1616A0T 16Mb: 1Mx16 Synchronous DRAM NT56V1616A0T DATA SHEET 1Mx16 Synchronous DRAM REV 1.2 August , 2000 REV 1.2 , AUG. 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. NT56V1616A0T
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NT56V1616A0T
1Mx16
Temperatu08
NT56V1616A0T-7
NT56V1616A0T-8
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gsm internet modem circuit
Abstract: 1Mx16 flash 1MX16
Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F160S3-L 16M 2Mx8/1Mx16 Smart3 Voltage
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LH28Fxxx
LH28F160S3-L
2Mx8/1Mx16)
gsm internet modem circuit
1Mx16 flash
1MX16
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LH28F160S5-L
Abstract: LH28Fxxx 1MX16
Text: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F160S5-L Smart5 Voltage 16M 2Mx8/1Mx16
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LH28Fxxx
LH28F160S5-L
2Mx8/1Mx16)
1MX16
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV160CT/CB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection
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MX29LV160CT/CB
16M-BIT
2Mx8/1Mx16]
100mA
Lo08/2005
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DP5Z1MM16PH3
Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Text: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’
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1Mx16,
200ns,
30A162-21
DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
50-pin
16-Megabits
DP5Z1MM16PY
DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
DP5Z1MM16PH3
DP5Z1MM16PI3
DP5Z1MM16PJ3
DP5Z1MM16PY
DP5Z1MW16PA3
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MX29LV160CBTC-90
Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160C
16M-BIT
2Mx8/1Mx16]
100mA
Pac9/2006
MX29LV160CBTC-90
29LV160C
MX29LV160B
MX29LV160CT
SA10
SA11
SA12
SA13
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29lv160c
Abstract: 29LV160C-70
Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160C
16M-BIT
2Mx8/1Mx16]
MX29LV160B
55R/70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM1186
29lv160c
29LV160C-70
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LH28F160S3HNS-L10
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10 Flash Memory 16M 2Mx8/1Mx16 (Model No.: LHF16KAS) Spec No.: EL131052 Issue Date: February 5, 2001 sharp LHF16KAS ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3HNS-L10
8/1Mx16)
LHF16KAS)
EL131052
LHF16KAS
LH28F160S3HNS-L10
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29lv160bt
Abstract: BB 555 MX29LV160BT SA10 SA11 SA12 SA13
Text: ADVANCED INFORMATION MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection
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MX29LV160BT/BB
16M-BIT
2Mx8/1Mx16]
100mA
48-Ball
MX29LV160BTXEC/BTXEI/BBXEC/BBXEI)
PM1041
29lv160bt
BB 555
MX29LV160BT
SA10
SA11
SA12
SA13
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV160T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
addresJAN/16/2001
JAN/30/2001
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MX29LV160BT
Abstract: SA10 SA11 SA12 SA13 PM1041 0.3mm pitch csp package 29LV160B
Text: MX29LV160BT/BB R 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160BT/BB
16M-BIT
2Mx8/1Mx16]
100mA
PM1041
MAR/16/2004
MAY/28/2004
JUL/01/2004
MX29LV160BT
SA10
SA11
SA12
SA13
PM1041
0.3mm pitch csp package
29LV160B
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Untitled
Abstract: No abstract text available
Text: MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160BT/BB
16M-BIT
2Mx8/1Mx16]
100mA
PM1041
MAR/16/2004
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV160T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/28/2000
AUG/25/2000
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1M NOR FLASH MXIC
Abstract: MX29LV161T SA10 SA11 SA12 SA13 MX29LV161BMC-70
Text: MX29LV161T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV161T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0855
JUL/03/2002
1M NOR FLASH MXIC
MX29LV161T
SA10
SA11
SA12
SA13
MX29LV161BMC-70
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV160T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
NOV/09/2000
NOV/16/2000
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mx29lv160abtc-70g
Abstract: 29LV160AT 29LV160A
Text: MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160AT/AB
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
MX29LV160T/B
MAR/26/2003
mx29lv160abtc-70g
29LV160AT
29LV160A
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29LV160B
Abstract: 29lv160bt
Text: MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160BT/BB
16M-BIT
2Mx8/1Mx16]
MX29LV160A
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM1041
29LV160B
29lv160bt
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Untitled
Abstract: No abstract text available
Text: R MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES erase operation completion. • Ready/Busy pin RY/BY - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160BT/BB
16M-BIT
2Mx8/1Mx16]
100mA
PM1041
MAR/16/2004
MAY/28/2004
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Untitled
Abstract: No abstract text available
Text: MX29LV160T/B, MX29LV161T/B FEATURES 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B,
MX29LV161T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
program01
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29LV160
Abstract: No abstract text available
Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
MX29LV160AT/AB
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
MAR/26/2003
29LV160
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29LV160
Abstract: 29lv160 Flash
Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
MX29LV160AT/AB
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0866
29LV160
29lv160 Flash
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29LV160
Abstract: mxic 29lv160 MX29LV160AT SA10 SA11 29lv160 Flash MX29LV160
Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
MX29LV160AT/AB
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
NOV/21/2002
29LV160
mxic 29lv160
MX29LV160AT
SA10
SA11
29lv160 Flash
MX29LV160
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29LV160
Abstract: mxic 29lv160 MX29LV160ABTC-90 29lv160t 29LV160AT MX29LV160BTC-90 MX29LV160TMC-90 MX29LV160ABTC90G 29lv160 Flash
Text: MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
MX29LV160AT/AB
16M-BIT
2Mx8/1Mx16]
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0866
29LV160
mxic 29lv160
MX29LV160ABTC-90
29lv160t
29LV160AT
MX29LV160BTC-90
MX29LV160TMC-90
MX29LV160ABTC90G
29lv160 Flash
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Untitled
Abstract: No abstract text available
Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES and erase operation completion. • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160C
16M-BIT
2Mx8/1Mx16]
100mA
wri/12/2005
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