Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1M X 8 CMOS RAM Search Results

    1M X 8 CMOS RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    5962-8670505RA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    5962-8670511UA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    5962-8861103LA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation

    1M X 8 CMOS RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motorola dram

    Abstract: BA QB MC16S084M3C BA 656
    Text: MOTOROLA Order this document by MC16S084M3C/D SEMICONDUCTOR TECHNICAL DATA 2 x 1M x 8 Synchronous Dynamic RAM MC16S084M3C 2 x 1M x 8 The MC16S084M3C is a CMOS synchronous dynamic random access memory organized as 2 banks x 1,048,576 words x 8 bits with LVTTL interface. Fully synchronous operations are referenced to the


    Original     		PDF MC16S084M3C/D MC16S084M3C MC16S084M3C Hz/83 Hz/67 motorola dram BA QB BA 656

    AN1064

    Abstract: CY7C1059DV33 CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXI
    Text: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 110 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 20 mA The CY7C1059DV33[1] is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is


    Original     		PDF CY7C1059DV33 CY7C1059DV33 AN1064 CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXI

    14553

    Abstract: EDI8F81026C EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C25M6I EDI8F81026C35M6C
    Text: EDI8F81026C 1Mb x 8 Static RAM CMOS Module FEATURES DESCRIPTION • 1M x 8 bit CMOS Static RAM The EDI8F81026C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 20 thru 35ns


    Original     		PDF EDI8F81026C EDI8F81026C 512Kx8 EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C35M6C EDI8F81026C25M6C 14553 EDI8F81026C20M6C EDI8F81026C25M6I EDI8F81026C35M6C

    SP612B-7

    Abstract: No abstract text available
    Text: LH5P8128 CMOS 1M 128K X 8 Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8128 is a 1M bit Pseudo Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns


    OCR Scan     		PDF LH5P8128 32-pin, 600-mil 525-mil LH5P8128 5P812B-11 SP812S-11 SP612B-7

    Untitled

    Abstract: No abstract text available
    Text: ML IS »93 SM481000ALP 1MByte 1M x 8 CMOS Low Profile DRAM Module General Description Features The SM 481000ALP is a high performance, 1Mbyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP package. • • The module utilizes two CMOS 1M x 4 dynamic RAMs


    OCR Scan     		PDF SM481000ALP 481000ALP 30-pin, 60/70/80ns

    Untitled

    Abstract: No abstract text available
    Text: SMS481000SLP 1MByte 1M x 8 CMOS DRAM Module {Low Profile) General Description Features The SMS481000SLP is a high performance, 1-megabyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP(smgle-m-line pins) package. The module utilizes eight CMOS 1M x 1 dynamic RAMs


    OCR Scan     		PDF SMS481000SLP 30-pin, 70/80/100ns 100ns)

    Untitled

    Abstract: No abstract text available
    Text: LH5P8129 CMOS 1M 128K x 8 CS-Control Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8129 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns


    OCR Scan     		PDF LH5P8129 32-pin, 600-mil 525-mil 32-PIN LH5P8129

    Untitled

    Abstract: No abstract text available
    Text: LH5P8128 CMOS 1M 128K X 8 Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8128 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (M AX.): 6 0 /8 0 /1 0 0 ns


    OCR Scan     		PDF LH5P8128 32-pin, 600-m 525-mill LH5P8128

    Untitled

    Abstract: No abstract text available
    Text: JW. i 6 1993 SM581000A 1MByte 1M x 8 CMOS DRAM Module General Description The SM 581000A is a high performance, 1-megabyte dynamic RAM module organized as 1M words by 8 bits, in a 30-pin, leadless, single-in-line memory module (SIM M ) package. The module utilizes two CMOS 1M x 4 dynamic RAMs


    OCR Scan     		PDF SM581000A 81000A 30-pin, 60/70/80ns 60/70/80ns)

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC16S084M3C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 16S 084 M 3 C 2 x 1M x 8 2 x 1M x 8 Synchronous Dynamic RAM The MC16S084M3C is a CMOS synchronous dynamic random access memory organized as 2 banks x 1,048,576 words x 8 bits with


    OCR Scan     		PDF MC16S084M3C/D MC16S084M3C Hz/83 Hz/67

    lh511000

    Abstract: W5110
    Text: PRELIMINARY LH 5 1 1 0 0 0 CMOS 1M 128K x 8 Static RAM DESCRIPTION FEATURES The LH511000 is a 1M bit static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • 131,072 • Access times: 100/120 ns (MAX.) •


    OCR Scan     		PDF 32-pin, 600-mil 525-mil LH511000 32-PIN VI511000 W5110

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC16S084M3C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC16S084M3C 2 x 1M x 8 2 x 1M x 8 Synchronous Dynamic RAM The MC16S084M3C is a CMOS synchronous dynamic random access memory organized as 2 banks x 1,048,576 words x 8 bits with LVTTL interface. Fully synchronous operations are referenced to the


    OCR Scan     		PDF MC16S084M3C/D MC16S084M3C MC16S084M3C Hz/83 Hz/67 6S084M3C/D

    Untitled

    Abstract: No abstract text available
    Text: 1M x 32 CMOS STATIC RAM MODULE PRELIMINARY IDT7MP4104 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabyte static RAM module The IDT7MP4104 is a 1M x 32 static RAM module con­ structed on an epoxy laminate FR-4 substrate using 8 1M x


    OCR Scan     		PDF IDT7MP4104 IDT7MP4104 200mV

    lh51100

    Abstract: lh511000
    Text: PRELIMINARY LH511000UL C M O S 1M 1 2 8 K x 8 S ta tic R A M FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH511000UL is a 1M bit static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times:


    OCR Scan     		PDF LH511000UL 32-pin, 600-mil 525-mil LH511000UL LH5110Q0UL 600-mii lh51100 lh511000

    Untitled

    Abstract: No abstract text available
    Text: 4 % tç g r GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000S-60/70/80/10 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000S is 1M x 8 Dynamic RAM Mod­ ule organized as 1,048,576 x 8 bits and consists of eight 1M bit DRAM GM71C1000SJ in 20/26 pin


    OCR Scan     		PDF GMM781000S-60/70/80/10 GMM781000S GM71C1000SJ) GM71C1000SJ GMM78

    Untitled

    Abstract: No abstract text available
    Text: ML 1 6 »82 SM481000A 1MByte l M x 8 CMOS DRAM Module General Description Features The SM 481000A is a high performance, 1-megabyte dynam ic RAM module organized as 1M words by 8 bits, in a 30-pin SIP memory module package. • • • The module utilizes two CMOS 1M x 4 dynamic RAMs


    OCR Scan     		PDF SM481000A 81000A 30-pin 22fif 60/70/80ns 60/70/80ns) 81000A-06 81000A-07 81000A-08

    TAE 1102

    Abstract: No abstract text available
    Text: PRELIMINARY IDT7MP4104 1M x 32 CMOS STATIC RAM MODULE Integrated D evice T ech nology, Inc. FEATURES: DESCRIPTION: • High density 4 megabyte static RAM module The ID T7M P 4104 is a 1M x 32 static RAM module con­ structed on an epoxy laminate FR -4 substrate using 8 1M x


    OCR Scan     		PDF IDT7MP4104 I/010 I/011 I/016 I/017pplied. TAE 1102

    Untitled

    Abstract: No abstract text available
    Text: - !'l i C- !9Sú SM581000ALP 1MByte 1M x 8 CMOS Low Profile DRAM Module General Description Features The SM 581000ALP is a high performance, 1Mbyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIM M package. • • • The m odule utilizes two CM OS 1M x 4 dynamic RAMs


    OCR Scan     		PDF SM581000ALP 581000ALP 30-pin, 60/70/80ns

    TAC 2J

    Abstract: No abstract text available
    Text: GMM7361000BS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W ORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 7361000BS/SG is a 1M x 36 bits Dynamic RAM MODULI: which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x lbit DRAMs


    OCR Scan     		PDF GMM7361000BS GMM7361000BSG GMM7361000BS/SG GMM7361000BS/SG-60/70/80 GMM7361OOOBS/SG TAC 2J

    71C4400Bj

    Abstract: No abstract text available
    Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin


    OCR Scan     		PDF GMM781000BN S-60/70/80 781000BN 71C4400BJ, 4400BJ 0003fl2fl GMM781000BNS M0267S7 71C4400Bj

    00-KX02

    Abstract: No abstract text available
    Text: GMM781000CNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Features The GMM781000CNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400CJ, 1M x4 sealed in 20 pin SOJ package. The


    OCR Scan     		PDF GMM781000CNS GM71C4400CJ, GMM781000CNS GMM781000CNS-60/70/80 GM71C44 GMM781000CNS-60 GMM78I000CNS-70 GMM781000CNS-80 00-KX02

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.


    OCR Scan     		PDF iuPD441000L-X 128K-WORD uPD441000L-X PD441000L-X 32-pin 36-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.


    OCR Scan     		PDF iuPD441000L-X 128K-WORD uPD441000L-X PD441000L-X 32-pin 36-pin

    Untitled

    Abstract: No abstract text available
    Text: GMM7361100BS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W ORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 7361100BS/SG is a 1M x 36 bits Dynamic RAM M ODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x 1bit DRAMs


    OCR Scan     		PDF GMM7361100BS/SG-60/70/80 7361100BS/SG GMM7361100BS/SG 111im