1K TRANSISTOR Search Results

ZTX601

Contextual Info: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K

ZTX601

Abstract: ZTX600 DSA003770
Contextual Info: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*

ztx601

Contextual Info: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*

52001HR

Abstract: IN3064 1K x 4 static ram ttl
Contextual Info: 52001 H 1K BIT 128 x 8 NVRAM Q 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Failure Protection Unlimited Recall Cycles Memory Margining Capability

52212HR

Abstract: IN3064 256X4 ncr 400 256x4 static ram
Contextual Info: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles

PCN0109

Abstract: EP1K100 1K transistor
Contextual Info: PROCESS CHANGE NOTIFICATION ACEX 1K DEVICE PROCESS IMPROVEMENT Altera & TSMC have jointly developed a more efficient process for the ACEX 1K products. The metallization layers on Altera’s ACEX 1K devices will be reduced in dimensions so as to accomplish an overall reduction in die size. Since all other key

MMBT6428

Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Contextual Info: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087

Contextual Info: CEJ8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 23mΩ @VGS = 4.5V. D RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). G1 *1K *1K G2 High power and current handing capability.

Contextual Info: CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 23mΩ @VGS = 4.5V. D RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). G1 *1K *1K G2 High power and current handing capability.

RTGN131AP

Abstract: 4503 rtgn131
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A

Nov-27-1996

Contextual Info: BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 571 XXs 1=B UPON INQUIRY Package 2=E 3=C SOT-23 Maximum Ratings

CEG8208

Abstract: AIDM-25 S127
Contextual Info: CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 22mΩ @VGS = 4.5V. D RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). *1K G1 G2 *1K High power and current handing capability.

Q62702-C2355

Contextual Info: BCR 521 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 521 XVs 1=B Q62702-C2355 Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: ET1257 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N No V(BR)CEO (V)1k V(BR)CBO (V)1k I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.5k Maximum Operating Temp (øC) h(FE) Min. Current gain.4 @I(C) (A) (Test Condition)120

but16

Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued T0-204AA (FORMERLY TO-3) (continued) Resistive Switching lcCont Amps Max 8 VcEO (sus) Volts Min Device Type NPN PNP fr MH? Amp Max Max Amp Min (al 25°C Watts MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A

BCR571

Contextual Info: BCR571 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR521

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

Contextual Info: BCR 521 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 521 XVs Pin Configuration 1=B 2=E Package 3=C

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR521

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR571

Contextual Info: BCR571 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

IC 571

Abstract: transistor d 571
Contextual Info: BCR 571 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 571 XXs Pin Configuration 1=B 2=E Package 3=C

Contextual Info: 8 BIT SINGLE CHIP MICROCONTROLLER LC875532A/24A/16A Preliminary LC875532A 8-Bit Single Chip Microcontroller incorporating 32K-byte ROM and 1K-byte RAM on chip. LC875524A 8-Bit Single Chip Microcontroller incorporating 24K-byte ROM and 1K-byte RAM on chip.