Untitled
Abstract: No abstract text available
Text: DIODE ARRAY D 1J A 2 0 / D 1J A 4 0 / D 1J A 6 0 F e a tu re s • 9 4 - t — Y < r> Jfy 3 > Jf- y y ° 4 : ' r I tz r ' f O r - Y T U 4 x - r , • x f- j b ^ i P i i c l S j ^ - c # -? = ? x f ' - ° 7 * — L h J; fz. • D1JA series are diode arrays consist of
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1N4003
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE - B - D -iX i Q i X i Z - M 5THD 7 TYP. n l@ m m 0- i X r i C A Description: ff c] c] Û - AA AA- — Il 11 II 1J— 1J— — Y - DIA. (4 TYP.) TAB #110, t = 0.5
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CM100TF-28H
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions
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H11J1-H11J5
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AKO 450
Abstract: high voltage diode BAV19 BAV20 BAV21 FDH400 VF-10
Text: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies National 9 Semiconduc tor" BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* ta=25°cunieSsothe ,seated
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BAV19
DO-35
BAV19
BAV20:
FDH400.
BAV20
BAV21
OT-23P
AKO 450
high voltage diode
FDH400
VF-10
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BAV19
Abstract: BAV20 BAV21 FDH400
Text: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies N BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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BAV19
BAV20
BAV21
DO-35
BAV19
BAV20:
FDH400.
BAV20
BAV21
FDH400
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SMD zener 562
Abstract: S102T current regulative diode T 5 Z 27-2.e S501T S-501T S-123T s-562t 562T CRD Diode crd e102
Text: CURRENT REGULATIVE DIODE CRD CRD is a diode which supplies constant current to an electric circuit, even when power supply voltage fluctuations or load impedance fluctuations occur. CRD is used for current stabilization and current limiting. Part number z1 1J 2
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E-102
E-152
E-202
E-272
240kfi
120kfi
E-352
E-452
E-562
SMD zener 562
S102T current regulative diode
T 5 Z 27-2.e
S501T
S-501T
S-123T
s-562t
562T
CRD Diode
crd e102
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DIODE 1N3070
Abstract: 1N3070 high voltage diode 1N3070 DIODE 1N3070 DIODE DATASHEET MMBD1401
Text: 1N3070 1N3070 DO-35 General Purpose High Voltage Diode Sourced from Process 1J. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 200 V IO Average Rectified Current
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1N3070
DO-35
MMBD1401
DIODE 1N3070
1N3070
high voltage diode
1N3070 DIODE
1N3070 DIODE DATASHEET
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340 opto isolator
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode
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74bbflSl
H11J1-H11J5
74bbfl51
0DQ4S11
340 opto isolator
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Untitled
Abstract: No abstract text available
Text: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies N a t io n a l Semiconductor BAV19 / 20 / 21 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* ta=25°c unlessotherw isenoted
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BAV19
BAV20
BAV21
BAV19
BAV20:
FDH400.
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IN5225
Abstract: BAV19 BAV20 BAV21 DO-35 BLUE CATHODE
Text: BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current
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BAV19
BAV20
BAV21
DO-35
BAV19
BAV20
IN5225
BAV21
DO-35 BLUE CATHODE
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BAV19
Abstract: BAV20 BAV21 MARK GM DIODE IN5225A Color code diode DO-35
Text: BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 COLOR BAND DENOTES CATHODE High Voltage General Purpose Diode Sourced from Process 1J. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 100 150 200 200 V V V mA W IV Working Inverse Voltage
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BAV19
BAV20
BAV21
DO-35
BAV19
BAV20
BAV21
MARK GM DIODE
IN5225A
Color code diode DO-35
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MI32T
Abstract: No abstract text available
Text: CRO INFRARED EMITTING DIODE 02.94 “ 0.116 DESCRIPTION r 5 .L M I32T is GaAlAs infrared emiitting diode m olded in 3mm MI32T diam eter > Th 1.02 J V S ') (0.04) 0.75(0.03)_j max. 1J u clear transparent lens. 0.5 (0.02)~~ •2.5(0.1) ABSOLUTE MAXIMUM RATINGS
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MI32T
MI32T
100mA
160mW
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BAV19
Abstract: BAV20 DIODE 1J BAV21 FDH400
Text: BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Process 1J. NSC alternate for BAV19 & BAV20: FDH400. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V V V mA W IV Working Inverse Voltage IO Average Rectified Current
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BAV19
DO-35
BAV19
BAV20:
FDH400.
BAV20
BAV21
BAV20
DIODE 1J
BAV21
FDH400
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BAV19
Abstract: BAV20 BAV21 FDH400
Text: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies National Semiconductor' BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Proce ss 1J. N S C alternate for B A V 1 9 & BAV20: FDH400. Absolute Maximum Ratings* Symbol W lv TA = 25°C unless otherwise noted
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BAV19
DO-35
BAV19
BAV20:
FDH400.
BAV20
BAV21
bSD1130
b5G1130
FDH400
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fdh400
Abstract: No abstract text available
Text: FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND FDLL400 BROWN 2ND BAND VIOLET LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics.
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FDH400
FDLL400
DO-35
LL-34
MMBD1401-1405
FDH/FDLL400
FDH400TR
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1J2H
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions
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H11J1-H11J5
1J2H
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Untitled
Abstract: No abstract text available
Text: FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND FDLL400 BROWN 2ND BAND VIOLET LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics.
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FDH400
FDLL400
LL-34
DO-35
MMBD1401-1405
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Untitled
Abstract: No abstract text available
Text: CRO M P G B N B 32 T A -4 A / l 1J PURE GREEN/BLUE DESCRIPTION MPGBNB32TA-4A/11J is a pure green and blue lamp offering a changing color characteristics dependent on the direction the lamp is biased.These two light emitting diodes are mounted in a 3mm diameter clear
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MPGBNB32TA-4A/11J
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ADI315
Abstract: Z16B 1S144 AD1321 ad1318 AD1315 AD1315KZ AD1317 AD1324 AD664
Text: High Speed Active Load with Inhibit Mode AD1315 A N A LO G D EVICES FEATURES ±50 mA Voltage Programmable Current Range 1J> ns Propagation Delay Inhibit Mode Function High Speed Differential Inputs for Maximum Flexibility Hermetically Sealed Small Gull Wing Package
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AD1315
AD1321,
AD1324
AD1315
ADI315
AD1315EB
AD1315KZ
AD1315KZ.
ADI315
Z16B
1S144
AD1321
ad1318
AD1317
AD664
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prepaid energy meter applications
Abstract: BIDDLE 241004-18 AVTM24-1J 48 volt Battery charger circuit megger calibration BIDDLE MEGGER ge traction motor repair 247101 fuse 1amp dlro
Text: AVTM24-1J Rev A April 2006 Instruction Manual DLRO Digital Low Resistance Ohmmeters Catalog No. 247000 Series M Valley Forge Corporate Center 2621 Van Buren Avenue Norristown, PA 19403-2329 U.S.A. 610-676-8500 www.megger.com DLRO® Digital Low Resistance Ohmmeters
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AVTM24-1J
prepaid energy meter applications
BIDDLE 241004-18
48 volt Battery charger circuit
megger calibration
BIDDLE MEGGER
ge traction motor repair
247101
fuse 1amp
dlro
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LNJ326W83RA
Abstract: YTFA
Text: / DEVELO PM EN T SPECIFICATIO N on11/Product Number LNJ326W83RA ffflJ /TYP E V 1J — ÏÏM /M A TERIAL /APPLICATIO N /O U TLIN E InGaAlP ffliÉ KM liftSI / P MMA 40 mW ABSOLUTE MAXIMUM RATINGS ÌSftàM t/CO N D ITIO N ir — K / Green Light Emitting Diode
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LNJ326W83RA
KB-H-040-02A
LNJ326W83RA
YTFA
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koa BwR1
Abstract: No abstract text available
Text: Surface Mount Devices www.koaspeer.com www.koaproducts.com Type Size inch mm 1H 0201 (0.6x0.3) 1E 0402 (1.0×0.5) 1J 0603 (1.6×0.8) 2A 0805 (2.0×1.25) 2B 1206 (3.2×1.6) 2E 1210 (3.2×2.6) 2H(W2H) 2010 (5.0×2.5) 3A(W3A) 2512 (6.3×3.1) Tolerance (％)
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RK73H/RK73B
RK73Z
RK73A
RK73G
1/16W
SDT310
SDT101A/SDT101B
RCR50ï
UL1676
RCR50EN
koa BwR1
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Untitled
Abstract: No abstract text available
Text: DIODE SERIES i*s 2 V 3 7 h + — / \ 1J T7 # < % — K Schottky Barrier rectifier diodes for power supplies Elements Application Package Type No. TO-220AB lo Vf D: Double V (A) (V) It (mA) Vr max (A) max (V) 50 1.0 0.55 1.0 2.0 50 O* HRP32 s s 90 1.0 0.8
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HRU0203A
HRU0302A
HRB0103A
HRB0103B
HRC0202A
HRW1002A
HRW2S02A
HRW2502A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH317 DAYLIGHT FILTER SFH317F SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm Surface not flat ¿039(1.0) .020 (.5) .028 (.7) .024(6) 024 ( ^ .016 (.4) n - • o iy ) .100(2 54) Collector .100(254) Emitter 1 " r L071(1J) '.047(1.2) 151 (385)
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SFH317
SFH317F
Filter-SFH317F
950nm)
a23b32b
vity-SFH317
tivity-SFH317F
SFH317/F
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