Untitled
Abstract: No abstract text available
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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RF3023
10MHz
28dBm
58dBm
RF3023
1980MHz)
915MHz)
DS090709
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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Original
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RF3023
RF3023
10MHz
28dBm
18dBm
915MHz)
1980MHz)
DS091023
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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Original
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RF3024
RF3024
10MHz
28dBm
18dBm
915MHz)
1980MHz)
DS100118
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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Original
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RF3023
RF3023
300kHz
28dBm
DS100728
RF3023SR
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PDF
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1ghz bjt
Abstract: rf3024
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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Original
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RF3024
RF3024
300kHz
28dBm
18dBm
DS100728
1ghz bjt
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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Original
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RF3024
RF3024
10MHz
DS120723
RF3024SR
RF3024PCK-410
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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Original
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RF3024
10MHz
28dBm
58dBm
RF3024
915MHz)
1980MHz)
DS090731
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PDF
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rfmd sc70-6
Abstract: 1ghz bjt RF3023
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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Original
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RF3023
RF3023
10MHz
28dBm
18dBm
DS120723
rfmd sc70-6
1ghz bjt
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PDF
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1ghz bjt
Abstract: No abstract text available
Text: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control
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Original
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RF3023
RF3023
300kHz
28dBm
18dBm
DS120523
1ghz bjt
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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Original
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RF3024
RF3024
300kHz
28dBm
18dBm
DS120523
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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Original
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RF3024
RF3024
10MHz
28dBm
18dBm
DS120723
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PDF
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RF2316
Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
Text: TA0015 TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data
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TA0015
RF2312/RF2317:
RF2316
TA0015
DIN4500B
RF2312
RF2317
HBT transistor s parameters measures
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PDF
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Untitled
Abstract: No abstract text available
Text: RFPP9850 1GHZ, 28DB GAIN GAAS/GAN PUSH PULL HYBRID Package: SOT-115J Features • Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Suitable for PAL D and Flat NTSC Loading Unconditionally Stable Under all
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RFPP9850
OT-115J
250mA
24VDC
40MHz
1003MHz
RFPD9850
RFPP9850
1003MHz.
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PDF
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RF2316
Abstract: DIN4500B TA0015 HBT transistor s parameters measures
Text: TA0015 TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems Monolithic Amplifiers using GaAs HBT technology have been developed. HBT based amplifiers offer extremely flat frequency response with high dynamic
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TA0015
RF2312/RF2317:
40dBm.
RF2317
RF2316.
RF2316
DIN4500B
TA0015
HBT transistor s parameters measures
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Untitled
Abstract: No abstract text available
Text: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mm x 2mm x 0.85mm Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:
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RF1201
RF1201broadband
-80dBc
40dBm
IEEE802
11b/g
900MHz
1900MHz
DS120625
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PDF
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RFMD RF1201
Abstract: HDR 1X2 RFmd SPDT
Text: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mm x 2mm x 0.85mm Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:
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RF1201broadband
RF1201
-80dBc
40dBm
IEEE802
11b/g
RF1201
appl500
900MHz
1900MHz
RFMD RF1201
HDR 1X2
RFmd SPDT
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PDF
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RF1200SPDT
Abstract: HDR-1X2 HDR1X2 RF1200 RF1200PCBA-410
Text: RF1200 SPDT SWITCH RoHS Compliant & Pb-Free Product Package Style: QFN, 6-pin, 2x2 Features Low Insertion Loss 0.3dB at 1GHz High Isolation 26dB at 1GHz Low Control Voltage 2.6V to 5.0V Harmonics H2: -80dBc@1GHz GaAs pHEMT Process RF1 1 6 VRF1
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RF1200
-80dBc
IEEE802
11b/g
RF1200
DS070517
1900MHz
RF1200SPDT
HDR-1X2
HDR1X2
RF1200PCBA-410
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PDF
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Modeling of SOI FET for RF Switch Applications
Abstract: No abstract text available
Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is
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12-stacked
12stacked
Modeling of SOI FET for RF Switch Applications
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Untitled
Abstract: No abstract text available
Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:
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Original
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RF1200
RF1200broadband
-80dBc
RF1200
1900MHz
DS101202
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PDF
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Y parameters of rf bjt
Abstract: RF1200 RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2
Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:
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Original
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RF1200
RF1200broadband
-80dBc
11b/g
RF1200
1900MHz
DS101202
Y parameters of rf bjt
RF1200PCBA-410
high power SPDT
1ghz bjt RF
HDR1X2
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PDF
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RF1201
Abstract: RFMD RF1201 jammer gsm
Text: RF1201 BROADBAND 10W SPDT SWITCH RFMD Green, RoHS Compliant, Pb-Free Product Package Style: QFN, 6-Pin, 2.00mmx2.00mmx0.85mm Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:
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RF1201
00mmx2
00mmx0
-80dBc
40dBm
IEEE802
11b/g
DS090216
1900MHz
RF1201
RFMD RF1201
jammer gsm
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PDF
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Untitled
Abstract: No abstract text available
Text: RF1200 SPDT SWITCH RoHS Compliant & Pb-Free Product Package Style: QFN, 6-pin, 2x2 Features Low Insertion Loss 0.3dB at 1GHz High Isolation 26dB at 1GHz Low Control Voltage 2.6V to 5.0V Harmonics H2: -80dBc@1GHz GaAs pHEMT Process RF1 1 6 VRF1
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Original
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RF1200
-80dBc
IEEE802
11b/g
RF1200
2002/95/EC
DS070726
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PDF
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RFMD RF1201
Abstract: Bluetooth Jammer RF1201 jammer gsm gsm jammer Y parameters of rf bjt RFmd SPDT
Text: RF1201 RF1201broadband 10W spdt switch BROADBAND 10W SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V
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Original
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RF1201
RF1201broadband
-80dBc
40dBm
IEEE802
11b/g
1900MHz
DS101202
RFMD RF1201
Bluetooth Jammer
RF1201
jammer gsm
gsm jammer
Y parameters of rf bjt
RFmd SPDT
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PDF
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Untitled
Abstract: No abstract text available
Text: RFÜ RF2326 [: Preliminary MICRO DEVICES 3 V GENERAL PURPOSE AM PLIFIER Typical Applications • Broadband Gain Blocks • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • Oscillator Loop Amplifiers • IF or RF Buffer Amplifiers
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OCR Scan
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RF2326
RF2326
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PDF
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