1F2 DIODE Search Results

MARKING 1F2

Abstract: STMicroelectronics DIODE marking code EE ESDA18-1F2 transil diode DIODE 76A AN1235 st Diode marking EE 1F2 Diode STMicroelectronics DIODE marking code
Contextual Info: ESDA18-1F2 ASD Application Specific Devices TRANSIL : Transient Voltage Suppressor FEATURES AND BENEFITS: • ■ ■ ■ ■ Stand-off voltage 16V Unidirectional device Low clamping factor VCL/VBR Fast response time Very thin package: 0.65 mm DESCRIPTION

12a2

Contextual Info: LESHAN RADIO COMPANY, LTD. 1F1 – 1F7 1A 1A FAST RECOVERY DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Maximum Rectified Current Forward Peak @ Half-Wave Surge Current @ Resistive Load 60Hz 8.3ms Superimposed PRV I O@ T L V PK 1F1 1F2 1F3 1F4

st Diode marking EE

Abstract: MARKING 1F2 AN1235 AN1751 ESDA18-1F2 JESD97
Contextual Info: ESDA18-1F2 Transil , transient voltage suppressor Features • Stand-off voltage 16V ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.65 mm Flip Chip 4 bumps Complies with the following standards

transil diode equivalent

Contextual Info: ESDA18-1F2 Transil , transient voltage suppressor Features • Stand-off voltage 16V ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.65 mm Flip Chip 4 bumps Complies with the following standards

FP100R12KT4

Abstract: 2f k
Contextual Info: Technische Information / technical information FP100R12KT4_B11 IGBT-Module IGBT-modules EconoPIM 3 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: FAST RECOVERY DIODE DFM1F Unit in mm inch • tt s OUTLINE DRAWING • m L & G B u i S > * - > u K«ii Direction of polarity ■FEATURES ¿0.6 (0.024) • For high speed sw itch ing. • Diffused-junction. Resin encapsulated. ■* Type Color of cathode band, symbol

Contextual Info: www.eicsemi.com 1F1 ~ 1F7 FAST RECOVERY DIODES R-1 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.099 (2.51) 0.95 (2.42) High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

Contextual Info: 1F1 ~ 1F7 FAST RECOVERY DIODES R-1 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.099 (2.51) 0.95 (2.42) High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

DO-41

Abstract: IN 4741 do41 in 4740 in 4744 in 4751 in4744 IN4746 IN4743 IN4733
Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T-Ol-Ol J SILICON DIODES SEM ICONDUCTORS e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN /IN /IN „ IN

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

DO-41

Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T -O l-O l J SILICON DIODES S E M IC O N D U C T O R S e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN

Contextual Info: I \ l E C HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER 4 DESCRIPTION FEATURES PS2806-1 and PS2806-4 are optically coupled isolators con­ taining a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor in a plastic SOP Small

A-405

Abstract: Code marking 1F1
Contextual Info: LESHAN RADIO COMPANY, LTD. 1F1 thru 1F7 1 Feature & Dimensions Fast Recovery Rectifiers * Plastic package has Underwriters Laboratory * * * * * * * * Reverse Voltage 50 to 1000V Forward Current 1.0A Flammability Classification 94V-0 High temperature metallurgically bonded construction

white noise Generator 1GHz

Abstract: noise diode "alpha" PACKAGE OUTLINE
Contextual Info: ALPHA IND/ S E M I C O N D U C T O R MAE D • D S Ô S M M 3 D G 0 1 3 b 0 ST T ■ ALP Noise Diodes 7 01-ZJ FEATURES ■ ■ ■ ■ ■ ■ ■ ■ White noise generator from 1MHz to 18GHz Passivated MESA fabrication for highest reliability Available in chip form, and various metal

schematic diagram motor control dc 12v

Abstract: L2724
Contextual Info: Aspect Development, Inc. During QA it was found that pages within this section are missing from the original source document. These pages are not available from the manufacturer at this time. Aspect Development, Inc. apologizes for any inconvenience. Please contact VIP Customer Support at 603 880-3764x25 or the

LB1631

Abstract: LB1631M fdd motor driver
Contextual Info: SANYO SEMICONDUCTOR CORP Ï Ë E lT | 7 TT 7 □ ? h DD0 3 3 7 4 - S Z a I - 2,5- LB1631M M o n o lith ic D fg itaf IC 3097 26 3 3 Low-Saturation Bidirectional Motor Driver for Low-Voltage Applications The LB1631M is a dual low-saturation bidirectional motor driver IC for use in

diode byt 45

Abstract: BYT 45 J 8 dip smps circuits diode byt 45 J 100CC 25CC BYT 12 DIODE smps rectifier fast recovery diode 8 dip smps ic 2B100L
Contextual Info: / = T SGS-THOMSON ^ 7 # ü Llg¥liQ *S BYT 30PI-600/800 FAST RECOVERY RECTIFIER DIODES • ■ ■ ■ ■ HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED : Capacitance 15pF Insulating voltage 2500 V rms

11F2

Contextual Info: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H I IF fam ily con sists o f a g alliu m -a lu m in u m -a rse n k le in fra re d e m ittin g d io d e co u p led to a sy m m etrical b ila te ra l silicon p h o to d e te cto r.

MH12210

Abstract: CR2354 equivalent VARTA cr2 CR2330 equivalent discharge curve CR123A RESIN PVC SE 1300 MT920 CR17345 Panasonic BR-C CR1620 equivalent
Contextual Info: International English Lithium Batteries Technical Handbook 2000 PDF File Technical Handbook Copyright 2000 Matsushita Battery Industrial Co., Ltd. All rights Reserved. No part of this technical handbook pdf file may be changed, altered, reproduced in any form or by any means without the prior written permission of

BC555

Abstract: D556 68z10
Contextual Info: IHW40N60R IH-series Reverse conducting IGBT C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior

Contextual Info: r HEWLETT PACKARD a 940iji70> DUAL LOW INPUT HCPL-2730 CURRENT, HIGH GAIN HCPL-2731 OPTOCOUPLERS * o u t l in e d r a w in g SC HEM A TIC 9.90 1.390» Ri i? ì f?i fsl HP x x x x * Y Y W W ft TYPE NUMBFR D A T f CODE 6 10 < 240) 7 36 29 0 ) 6-60 I 260)

AC243

Abstract: TC74AC373
Contextual Info: TC74AC373P/F/FW, TC74AC533P/F/FW O CTAL D - T Y P E LATCH WITH 3-STATE O UTPUT N O N -IN V ER E R TIN G TC74AC373P/F/FW INVERTING TC74AC533P/F/FW The TC74AC373 and TC74AC533 are advanced high speed CMOS OCTAL LATCH with 3-ST A T E OUTPUT fabricated with silicon gate and d o u b le -lay er m etal

tunnel diode

Abstract: lm719 IN3717 tunnel diode application 1N3717 1N2719 1N3719 TUNNEL DIODE d 220 1N3713 1N3715
Contextual Info: I — fdlL-s-19500/269 NAVT IC2ctcber 196S bDLfTARV SPECIPfCATION SEMfC0NDUCT05f TYPES DEVICE, 1N3719, 1N3715, TuKNEL 1N3717, DIODE, 1N3719 AND 1N3721 . 1. SCOPE 1.1 Description. - TMsspecification cmer8tie deWlrquirements MIL-S-1 8500, except as otherwise

Contextual Info: HIGH VOLTAGE ASSEMBLIED RECTIFIERS rs j ^ âs- '/ifL I f - PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATINGAND STORAGE TEMPERATURE RANGE : -20°C to+135'C JUUiipj'HS.&S TYPE M axim um Peak Reverse Voltage S.A.isLitjsS^SSL PRV M axim um Average Rectified Current