1F0000H Search Results
1F0000H Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
th50vsf1400
Abstract: BA30
|
OCR Scan |
50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30 | |
MX25L1635D
Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
|
Original |
MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25 | |
Contextual Info: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4 |
Original |
MX25L1673E PM1912 | |
w19b320Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4 |
Original |
W19B320AT/B w19b320 | |
M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
|
Original |
M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48 | |
AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
|
Original |
Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 | |
SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
|
Original |
KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor | |
CompactCellTM Static RAMContextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS |
Original |
Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM | |
GL032A
Abstract: S71GL032A S71GL032
|
Original |
S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 | |
M15451EContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can |
Original |
PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E | |
SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
|
Original |
S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 | |
Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised |
Original |
K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX | |
JESD94Contextual Info: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
S25FL116K 16-Mbit S25FL116K JESD94 | |
S25FL116KContextual Info: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
S25FL116K 16-Mbit S25FL116K | |
|
|||
29F032B
Abstract: m29f032b
|
OCR Scan |
Am29F032B 20-year 29F032B 29F032B m29f032b | |
AM29F032
Abstract: am29f032b-120 AM29F032B-90
|
OCR Scan |
Am29F032B 20-year 40-pin 44-pin AM29F032 am29f032b-120 AM29F032B-90 | |
IN3064
Abstract: MX25L3225D
|
Original |
MX25L3225D PM1432 IN3064 MX25L3225D | |
740-0007
Abstract: EN29GL064 6A000
|
Original |
EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 | |
Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel |
OCR Scan |
28F016SA 28F008SA 56-Lead, 28F016SA 28F032SA | |
Contextual Info: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in |
OCR Scan |
HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl | |
Contextual Info: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate |
OCR Scan |
28F016SV 16-MBIT 28F016SA, 28F008SA 28F008SA 56-Lead 4fl2bl75 | |
JESD216Contextual Info: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial and Automotive Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion |
Original |
S25FL116K 16-Mbit S25FL116K JESD216 | |
LH28F320BFHE-PBTL80
Abstract: AP-007-SW-E
|
Original |
LH28F320BFHE-PBTL80 LHF32F12 AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F320BFHE-PBTL80 AP-007-SW-E | |
FY520
Abstract: FW533 MT28F322D18
|
Original |
MT28F322D18FH 100ns MT28F322D18FH FY520 FW533 MT28F322D18 |