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Broadcom Limited HLMP-Y301-F0000 LED RED CLEAR T-1 T/H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HLMP-Y301-F0000	Bulk	46,996		1	1 $0.32 10 $0.185 100 $0.32 1000 $0.08081 10000 $0.06375	Buy Now
Mouser Electronics	HLMP-Y301-F0000		39,549			1 $0.32 10 $0.185 100 $0.09 1000 $0.081 10000 $0.063	Buy Now
EBV Elektronik	HLMP-Y301-F0000			26 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Electronics B84111F0000M116 LINE FILTER 250VAC/VDC 16A CHASS
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DigiKey	B84111F0000M116	Bulk	433		1	1 $23.39 10 $19.075 100 $23.39 1000 $23.39 10000 $23.39	Buy Now
Newark	B84111F0000M116	Bulk	39		1	1 $21.91 10 $21.91 100 $21.91 1000 $21.91 10000 $21.91	Buy Now
TDK Electronics B84111F0000B120 LINE FILTER 250VAC/VDC 20A CHASS
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DigiKey	B84111F0000B120	Bulk	122		1	1 $27.33 10 $22.292 100 $19.73367 1000 $19.73367 10000 $19.73367	Buy Now
Newark	B84111F0000B120	Bulk	50		1	1 $23.16 10 $22.16 100 $20.69 1000 $20.69 10000 $20.69	Buy Now
TDK Electronics B84111F0000B060 LINE FILTER 250VAC/VDC 6A CHASS
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DigiKey	B84111F0000B060	Bulk	65		1	1 $20.66 10 $16.852 100 $14.416 1000 $14.416 10000 $14.416	Buy Now
Newark	B84111F0000B060	Bulk	12		1	1 $17.21 10 $16.67 100 $14.78 1000 $14.78 10000 $14.78	Buy Now
TME	B84111F0000B060				40	1 - 10 - 100 $15.51 1000 $15.51 10000 $15.51	Get Quote
TDK Electronics B84111F0000G136 LINE FILTER 250VAC/VDC 36A CHASS
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DigiKey	B84111F0000G136	Bulk	58		1	1 $59 10 $59 100 $46.81125 1000 $46.81125 10000 $46.81125	Buy Now

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1F000 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1F000000-A004-F Abstract: EMC APPLICATION Text: SPECIFICATIONS FUTURE BUS CONNECTOR 1F Series Shield Cover for Future Bus Connector EMC Application Physical Shield Cover: Zinc Ally Spring: Phosphor Bronze DRAWING ORDERING I NF OR MATI ON PRODUCT NO.: 1F000000-A004-F Plating Spec. 0:120u" Min Cu Undrtplating Over All	Original	PDF	1F000000-A004-F 24pos) 1F000000-A004-F EMC APPLICATION
Untitled Abstract: No abstract text available Text: FUTURE BUS CONNECTOR SPECIFICATIONS 1F Series Shield Cover for Future Bus Connector EMC Application Physical Shield Cover: Zinc Ally Spring: Phosphor Bronze DRAWING ORDERING I NF OR MATI ON PRODUCT NO.: 1F000000-A002-F Plating Spec. 0:120u" Min Cu Undrtplating Over All	Original	PDF	1F000000-A002-F
MX25L1635D Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25 Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5	Original	PDF	MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
Untitled Abstract: No abstract text available Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4	Original	PDF	MX25L1673E PM1912
Untitled Abstract: No abstract text available Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function	Original	PDF	78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD
AT49BV320D Abstract: AT49BV320DT SA70 AT49BV Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout	Original	PDF	3581D AT49BV320D AT49BV320DT SA70 AT49BV
w19b320 Abstract: No abstract text available Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4	Original	PDF	W19B320AT/B w19b320
48C20 Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout	Original	PDF	3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
S 3590A Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout	Original	PDF
M29W320DT Abstract: M29W320D M29W320DB TFBGA48 Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns	Original	PDF	M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48
AM29F016D-120 Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm	Original	PDF	Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
msc 1697 Abstract: el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431 DSP56300 Text: MOTOROLA Order this document by: DSP56302/D SEMICONDUCTOR TECHNICAL DATA DSP56302 Advance Information 24-BIT DIGITAL SIGNAL PROCESSOR 3 SCI Interface Program RAM 20480 x 24 or X Data Y Data Program RAM RAM RAM 19456 × 24 and × × 24 7168 24 7168 Instruction	Original	PDF	DSP56302/D DSP56302 24-BIT DSP56302 DSP56300 msc 1697 el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	PDF	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
XC56303PV80 Abstract: pcr1a XC56303PV66 DSP56000 DSP56300 DSP56303 HA10 msc 1697 XC56303GC100 MCE Semiconductor Text: MOTOROLA Order this document by: DSP56303/D SEMICONDUCTOR TECHNICAL DATA DSP56303 Advance Information 24-BIT GENERAL PURPOSE DIGITAL SIGNAL PROCESSOR The DSP56303 is a member of the DSP56300 core family of programmable CMOS Digital Signal Processors DSPs . This family uses a high performance, single-clock-cycle-per-instruction	Original	PDF	DSP56303/D DSP56303 24-BIT DSP56303 DSP56300 DSP56000 DSP56300 XC56303PV80 pcr1a XC56303PV66 HA10 msc 1697 XC56303GC100 MCE Semiconductor

TE28F640J3C-120 Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective	Original	PDF	28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
GL032A Abstract: S71GL032A S71GL032 Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this	Original	PDF	S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032
M15451E Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can	Original	PDF	PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E
Untitled Abstract: No abstract text available Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3	Original	PDF	W28J320B/T 16/4M
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	PDF	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data DSP56311 Rev. 8, 2/2005 DSP56311 24-Bit Digital Signal Processor 3 16 6 6 Memory Expansion Area EFCOP Peripheral Expansion Area Address Generation Unit Six Channel DMA Unit X Data RAM 48 K x 24 bits YAB XAB PAB DAB Y Data	Original	PDF	DSP56311 24-Bit 24-Bit DSP56300
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	PDF	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX
JESD94 Abstract: No abstract text available Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	PDF	S25FL116K 16-Mbit S25FL116K JESD94
S25FL116K Abstract: No abstract text available Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	PDF	S25FL116K 16-Mbit S25FL116K
th50vsf1400 Abstract: BA30 Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory	OCR Scan	PDF	50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30

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Broadcom Limited HLMP-Y301-F0000

TDK Electronics B84111F0000M116

TDK Electronics B84111F0000B120

TDK Electronics B84111F0000B060

TDK Electronics B84111F0000G136

1F000 Datasheets Context Search

1F000000-A004-F

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MX25L1635D

Untitled

Untitled

AT49BV320D

w19b320

48C20

S 3590A

M29W320DT

AM29F016D-120

msc 1697

SAMSUNG MCP

XC56303PV80

TE28F640J3C-120

GL032A

M15451E

Untitled

SA6954

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Untitled

JESD94

S25FL116K

th50vsf1400