1E1 XA Search Results

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

p0102 circuits

Abstract: P0109DA p0109
Contextual Info: P010XX Sensitive standard SCRs up to 0.8 A Datasheet − production data Description A G A K KA K G G A SOT-223 P0102xN TO-92 (P010xxA) Thanks to highly sensitive triggering levels, the P010XX SCR series is suitable for all applications where available gate current is limited, such as

p0102 circuits

Contextual Info: P010xx Sensitive standard SCRs up to 0.8 A Features A • IT RMS up to 0.8 A ■ VDRM/VRRM100, 200, 400 and 600 V ■ IGTfrom 5 to 200 µA G A K KA Description K Thanks to highly sensitive triggering levels, the P010xx SCR series is suitable for all applications

P2M SCR

Abstract: P0102 P0102BL p0109 P0109DA P0102AA p0102 circuits MARKING CODE CGK P0109AL P0102MN
Contextual Info: P010xx Sensitive standard SCRs up to 0.8 A Features A • IT RMS up to 0.8 A ■ VDRM/VRRM100, 200, 400 and 600 V ■ IGTfrom 5 to 200 µA G A K KA Description K Thanks to highly sensitive triggering levels, the P010xx SCR series is suitable for all applications

p0115 st

Abstract: p0115 scr P1M marking code sot 223 P0115 P0115DA SCR P0115 MARKING CODE CGK sot-223 rth P0111 P0118DA
Contextual Info: P011xx Sensitive high immunity SCRs up to 0.8 A Features A • IT RMS up to 0.8 A ■ VDRM/VRRM 400 and 600 V ■ IGT from 0.5 to 25 µA G K Description A Thanks to highly sensitive triggering levels, the P011xx SCR series is suitable for all applications

irkt 132 12

Contextual Info: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

P0118

Abstract: P1M marking code sot 223
Contextual Info: P011xx Sensitive high immunity SCRs up to 0.8 A Features A • IT RMS up to 0.8 A ■ VDRM/VRRM 400 and 600 V ■ IGT from 0.5 to 25 µA G K Description A Thanks to highly sensitive triggering levels, the P011xx SCR series is suitable for all applications

Contextual Info: S M B Y W 0 4 -2 0 0 B YW 4200B _ HIGH EFFICIEN CY FAST RECO VERY DIODE MAIN PRODUCT CHARACTERISTICS I f a v 4A V rrm 200 V V f (max) 0.85 V Tj (max) 150 °C FEATURES AND BENEFITS • ■ ■ ■ ■ SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE

KP120

Contextual Info: HUF76132P3, HUF76132S3S S em iconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

bendix M55302

Abstract: military specification M55302 FSCM77820
Contextual Info: PCB150A environmentally sealed plug, 36 possible polarizing positions . 150 an d . 100 center to center spacing HOW TO ORDER Bendix Part Number Bendix® right angle PCB connector may be ordered with either preset or optional polariza­ tion. Optional polarization: 10-285392 & 3 : Complete with a -1 for 76 contact ar­

AN-994

Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

AN-994

Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

d 1830

Contextual Info: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: £ ÿ j S C S -T H O M S O N no^oiiLieraoK iD ei S TP S 1100U POWER SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS I f av 1.5 A V rrm 100 V V f (max) 0.70 V FEATURES AND BENEFITS SMB (Plastic) • NEGLIGIBLE SWITCHING LOSSES . LOW FORWARD VOLTAGE DROP ■ LOW CAPACITANCE

irf 1830

Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
Contextual Info: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

AN-994

Abstract: C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD
Contextual Info: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

IRF530S

Abstract: IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150
Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

76107d

Abstract: TC298
Contextual Info: HUF76107D3, HUF76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

AN-994

Abstract: C-150 IRF530S IRGS6B60KD IRGSL6B60KD
Contextual Info: PD - 95229 IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

A12Q

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.