1DT7 Search Results

Contextual Info: IDT7130SA/LA 1DT7140SA/LA CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) —Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation

Contextual Info: HIGH-SPEED 32K X 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH SEMAPHORE CONTROLS Integrated Device Technology, Inc. ADVANCED 1DT70727S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Eight independent 4K x 16 banks - 512 Kilobits of memory on chip

7027a

Abstract: 7M206 7027-A
Contextual Info: Integrated Device Technology* Inc. 8K X 9 & 16K X 9 CEMOS PARALLEL IN-OUT FIFO MODULE FEATURES: • • • • • • • • • • • First-In/First-Out memory module 8K x 9 organization IDT7M205S 16K x 9 organization (1DT7M206S) High speed: 20ns (max.) access time

Contextual Info: 9-BIT BUS EXCHANGE SWITCH 1DT74FST163209 ADVANCE INFORMATION In te g ra te d D e v ic e T e c h n o lo g y , Inc. or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output ports through

2SC3308

Abstract: 2SA1308
Contextual Info: "Sb TOSHIBA {DISCRETE/OPTô> 9097250 TOSHIBA <DISC R ET E/ OP TO > 2SC3308 1DT75SD 0007bfl7 5bC OTbBT " 0 7< SIÜ C O N NPN EPITA X IA L TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3MAX. FEATURES: 7.0 . Low Collector Saturation Voltage

1DT7M206S

Abstract: IDT7203 IDT7204 7M205S120 7M206S120
Contextual Info: 8K X 9 & 16K X 9 CEMOS PARALLEL IN-OUT FIFO MODULE In te g ra te d D evice T echnology, In c. FEATURES: • • • • First-In/First-Out memory module 8K x 9 organization 1DT7M205S 16K x 9 organization (1DT7M206S) High speed: 20ns (max.) access time

D014B

Abstract: IDT74FCT244 DO12B idt74fct245 die p924 p9244 O28A
Contextual Info: FAST CMOS 32-BIT BUFFER/LINE DRIVER AND BIDIRECTIONAL TRANSCEIVER MODULES 1DT7MP9244T/AT/CT IDT7MP9245T/AT/C1 I n te jp a te d D ev ic e T e c h n o lo g y , Inc» FEATURES: DESCRIPTION: • High density 32-bit FCT Logic modules • Equivalent to FAST speed and drive

CI 4046

Abstract: cmos 4046 4046 RAM H 7057 applications of 4046
Contextual Info: 512K/256K x 16 CMOS STATIC RAM MODULE 1DT7MP4047 IDT7MP4046 In te g r a te d D e v ic e T e c h n o lo g y , In c . FEATURES: DESCRIPTION: • The IDT7MP4047/4046 is a 512K/256K x 16 CMOS static RAM module constructed on a multilayer epoxy laminate FR4 substrate using eight or four 128K x 8 static FtAMs in small

Contextual Info: PRELIMINARY 1DT71B88 BiCMOS STATIC RAM 64K 16Kx 4-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16K x 4 B iC EM O S static RAM • High-speed address/chip select time — Military: 10/12/15ns — Commercial: 8 /1 0 /1 2ns • Single chip select

Contextual Info: IDT79R3051 , 79R3051E IDT79R3052™, 79R3052E 1DT79R3051/79R3052 INTEGRATED RISControllers™ Integrated Device Technology, Inc. — On-chip DMA arbiter — Bus Interface minimizes design complexity Single clock input with 40%-60% duty cycle Direct interface to R3720/21/22 RISChipset™

intel i486

Contextual Info: I N T E G R A T E D D E VI CE 47E D m 4 3 2 5 7 7 1 □Q10S3fe. fi B H I D T 128K BYTE CMOS SECONDARY CACHE MODULE FOR THE INTEL i486™ 1DT7MP6086 Integrated Device Technology, Inc. FEATURES: • 128K byte direct mapped secondary cache module • Uses the ID T71589 32K x 9 CacheRAM™ with burst

SFOR3G42

Abstract: SFOR3B42 SFOR3D42 SFOR3J42 SFOR3B SF0R3J42 SFOR3 TOSHIBA THYRISTOR
Contextual Info: 9097250 3T T O S H IB A DE I 1DT7SSQ SF0R3J42 3 9 C 02 261 CDI S C R E T E / O P T O ODDaEt.1 D J -Z S '-C ft PHASE CONTROL TH YRISTO R E 600V 0.3A MAXIMUM RATINGS SYM BO L C H A R A C T E R IS T IC Repetitive Peak SFOR3B42 Off-State Voltage SFOR3D42 and Repetitive

7164L20

Contextual Info: 3ÖE D IN T E G R A T E D DEVI CE 4Ô25771 OQQÛSbb 7 « I D T NOTICE SEE ORDER OF DATA FOR ERRATA IN F O R M A TIO N 3 - IT. IDT7164S 1DT7164L CMOS STATIC RAMS 64K 8K x 8-BIT Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • Optimized for fast RISC processors including the

Contextual Info: 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER Integrated D evice Technology, Inc. FEATURES: PRELIMINARY IDT71V532 The 1DT71V532 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate

CI 4046

Abstract: applications of 4046 4046
Contextual Info: 512K/256K x 16 CMOS STATIC RAM MODULE 1DT7MP4047 IDT7MP4046 In te g r a te d D e v ic e T e c h n o lo g y , In c . FEATURES: DESCRIPTION: • The ID T7M P 4047/4046 is a 51 2K /256K x 16 C M O S static RAM module constructed on a multilayer epoxy laminate FR 4 substrate using eight or four 128K x 8 static FtAMs in small

26551

Abstract: IDT72201
Contextual Info: MÛ2 S 77 1 0 D 5 b 4 3 E 453 CMOS SyncFlFO 64X9, 256x9, 512x9, 1024 X 9, 2048 X 9 and 4096 x 9 Integrated Device Technology, Inc. 1DT72421 IDT72201 IDT72211 IDT72221 IDT72231 IDT72241 FEATURES: DESCRIPTION: • • • • • • • • • • • •

Contextual Info: 3.3 VOLT CMOS SyncBiFlFO 256x36x2, 512x36x2, 1 ,02 4 x3 6 x 2 I dt PRELIMINARY IDT72V3622 IDT72V3632 IDT72V3642 Integrated Device Technology, Inc. FEATURES: • Memory storage capacity: IDT72V3622-256 x 36 x 2 1DT72V3632-512 x 36 x 2 IDT72V3642-1,024 x 36 X 2

2R56A

Abstract: A2LC
Contextual Info: INTEGRATE» DEVICE 47E D El MÛ2S771 QÜ10Q17 7 Hi IST 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1001 1DT7M1003 T - % - 2 3 - 1 4 FEATURES DESCRIPTION: • High density 1M /512K C M O S dual-port static RAM module • Fast access times:

Contextual Info: CM O S STATIC RAMS 16K 4 K x 4-BIT w IDT71681SA/LA IDT71682SA/LA Separate Data Inputs and Outputs Integrated D evice Technology. Inc. FEATURES: • S eparate data inp u ts and o utp uts • 1DT71681SA/LA: o utp u ts tra ck inp u ts d u rin g w rite r lode

Contextual Info: CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1Kx9, 2Kx9, 4 K x 9 IDT72021 IDT72031 IDT72041 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • First-In/First-Out Dual-Port memory • Bit organization - 1DT72021—1K x 9 - IDT72031—2K x 9 - IDT72041—4K x 9

1DT71V416

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT ADVANCE INFORMATION 1DT71V416 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise • Equal access and cycle times

C1990

Contextual Info: 36-BIT TO 9-BIT BIDIRECTIONAL FIFO MODULE IDT7M2002 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • First-In/First-Out memory module This module is a FI FO that has upt to 8 1DT72041 s 4K x 9 on board. The module is bidirectional with 4K x 36 transform­

Contextual Info: INTEGRATE» DEVICE 47E D m 4825771 0130^33 3 • IDT 1DT7052S IDT7052L HIGH-SPEED 2K x 8 FourPort STATIC RAM Integrated Device Technology, Inc. FEATURES: -4 4 -2 3 -1 2 . DESCRIPTION: that have a need to communicate in real time and also offers added benefit for high-speed systems In which multiple

laxon

Abstract: BIO-33
Contextual Info: MÛ2S771 0D5b43E 453 • CMOS SyncFlFO 6 4 X 9 , 2 5 6 x9 , 5 12x9 , 1024 X 9, 2048 X 9 and 4096 x 9 Integrated Device Technology, Inc. 1DT72421 IDT72201 IDT72211 IDT72221 IDT72231 IDT72241 FEATURES: DESCRIPTION: • • • • • • • • • •