11IIIIII Search Results

r2a3

Abstract: r1a10 M1367 M4589
Contextual Info: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.

TLV2272

Abstract: 17PM K011 04V 709 operational amplifier MO-200 TLV2262 TLV2262A TLV2262AID TLV2262AIP TLV2262AIPWLE TLV2262ID
Contextual Info: TLV2262, TLV2262A, TLV2262Y Advanced LinCMOS RAIL-TO-RAIL DUAL OPERATIONAL AMPLIFIERS • • • • Output Swing Includes Both Supply Rails Low N oise. . . 12 nV/VHz Typ at f = 1 kHz Low Input Bias C urrent. . . 1 pA Typ

AP10A

Contextual Info: AN ALO G DEVICES Dual Matched Instrumentation Operational Amplifier 0P-10 FEATURES • • • • • • • • • • • Extremely Tight Matching Excellent Individual Amplifier Parameters Offset Voltage M a tc h .0.18mV Max

p68 SMD

Abstract: ICP-01
Contextual Info: PRELIMINARY DATA SHEET ISG1000 5 V CATV MODEM RF RECEIVER stN M m m FEATURES DESCRIPTION AND APPLICATIONS • MCNS COMPLIANT: The ISG1000 is a complete RF receiver designed for use cable modem applications. The receiver integrates a diplex filter, triple conversion receiver and incorporates RF path for exter­

ace dm he tv

Abstract: tda 1047 NS16550A TL16C450 TL16C550B
Contextual Info: TL16C550B ASYNCHRONOUS COMMUNICATIONS ELEMENT SLLS136A-JANUARY 1994- REVISED MARCH 1996 Capable of Running With All Existing TL16C450 Software After Reset, All Registers Are Identical to the TL16C450 Register Set In the FIFO Mode, Transmitter and Receiver

INTEL I7 microprocessor circuit diagram

Abstract: burndy ms 8255 intel microprocessor architecture burndy N28F020
Contextual Info: in t e i, ¡SM002FLKA 2 MBYTE 1024K x 16 CMOS FLASH SIMM • High-Performance — 150 ns Maximum Access Time — 13.3 M B/s Read Transfer Rate ■ Standard 80-Pln Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/

Contextual Info: KM416S1120D CMOS SDRAM 1Mx 16 SDRAM 512 K x 16bit X 2 Banks Synchronous DRAM LVTTL Revision 1.2 March 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 Mar. 1999 ELECTRONiCS KM416S1120D CMOS SDRAM Revision History

LT1086H

Abstract: LT1086CT12 LT1086-5 ct LT1086CT5 12V 20A isolated regulators LT1086IT LT1083 CT t039 package transistor pin mount dual 1038 Transistor LT1086-5
Contextual Info: r r w m _ LT1086 Series TECHNOLOGY i,5 A Low D ro p o u t Positive R egulators A d ju s ta b le a n d Fixed 2.85V, 3.3V, 3.6V, 5V, 12V KOTURCS D C S C R IP T IO n • 3-Terminal Adjustable or Fixed 2.85V, 3.3V, 3.6V, 5V, 12V ■ Output Current of 1.5A, 0.5A for LT1086H

Contextual Info: TO SH IBA THM65V4075BTG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V4075BTG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165BFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: AQZ262,264 PhotoMOS RELAYS POWER PhotoMOS RELAYS High capacity type hi A | S UL File No.: E43149 CSA File No.: LR26550 Max. 9.0 Max. 32.0 mm inch FEATURES 1. High capacity type power photoMOS relay. Can switch a wide range of currents and voltages. Can control various types of

Contextual Info: M OSEL VITELIC V54C316162VA HIGH PERFORMANCE 3.3 VOLT 1 M X 16 SYNCHRONOUS DRAM 2 BANKS X 512Kbit X 16 C AS Latency = 3 PRELIMINARY 8 10 12 System Frequency fCK 125 MHz 100 MHz 83 MHz Clock Cycle Tim e (tcK 3 ) 8 ns 10 ns 12 ns Clock Access Tim e (tAC3)

Contextual Info: MOSEL VITELIC V54C32816G4VC HIGH PERFORMANCE 166/143 MHz 3.3 V 0 L T 8 M X 16 ENHANCED GRAPHICS SDRAM 4 BANKS X 2M bit X 16 PRELIMINARY 6 7 System Frequency fCK 166 MHz 143 MHz Clock Cycle Tim e (tcK 3 ) 6 ns 7 ns Clock Access Tim e (tAC3) CAS Latency = 3

GPR circuit schematic diagram full

Abstract: SIEMENS 3 TB 40 17 - 0B Siemens Halbleiter Siemens HE 8011 siemens b 58 468 la intel 80 Siemens SAB-C501
Contextual Info: Contents General Information Summary of Types incl. Ordering Codes 8-Bit Single-Chip Microcontrollers 16-Bit Single-Chip Microcontrollers Application Notes Instruction Set Summary Hexadecimal Order Package Outlines Summary of Types in Alphanumerical Order

12HWA

Abstract: BC56 BA5612SRWA 12SRWA 12YWA kingbright
Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 Tpexpa3p&AHbie ceMMcerMeHTHbie M H flM K aT O pb l 14 MM BbicoTa 3HaKa :1 4 mm np0M3B0AMTenb : Kingbright flnana30H cnnbi CBeTa yKa3aH npH TOKe 10 mA. Kofl: BA56-12HWA BA56-12EWA BA56-12GWA BA56-12YWA

2sd 5200

Abstract: SKT300 skt 2500 semikron skt 450 semikron skt 24 SKT250 to-209ad C450A M24-P 2sd 209 l
Contextual Info: S1E D Ö13bb71 DOOBMfib a 77 s e m ik r g n SEMIKRON INC V rsm Itrm s V rrm iV-dt i/or V drm maximum values for continuous operation 450 A I 550 A (sin. 180; Tease “ . .°C) 285 A (77 °C) 350 A (85 °C) Ita v V V V/ns 500 400 200 SKT250/04 C SKT300/04 C

RCA-6939

Abstract: rca 6939 TWIN POWER pentode twin pentode tempilaq 6939 6939 tube
Contextual Info: 6939 TWIN POWER PENTODE Internally Neutralized for Push-Pull Ampi ifierService RCA-6939 i s a t w i n power p e n t o d e o f t h e 9 - p i n m i n i a t u r e t y p e i n t e n d e d f o r use a s a p u s h - p u l I r f - p o w e r - a m p I i f i e r t u b e o r as a f r e q u e n c y m u i t i p l i e r t u b e in c o m m u n i c a t i o n s e q u i p m e n t

Germanium itt

Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Contextual Info: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470

Contextual Info: TOSHIBA THM65V4095BTG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V4095BTG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5164165BFT DRAMs on a printed circuit board. This module is optimized for applications which

VICTOREEN resistor mox 3

Abstract: VICTOREEN MOX ad705j "VICTOREEN" 705J VICTOREEN resistor VICTOREEN AD705 D705B AD705T
Contextual Info: A N A LO G D E V IC E S FEATURES DC PERFORMANCE 25 |*V max Offset Voltage AD705T 0.6 |aV/°C max Drift (AD70SK/T) 100 pA max Input Bias Current (AD705K) 250 pA max lB Over MIL Temperature Range (AD705T) 114 dB min CMRR (AD705K/T) 114 dB min PSRR (AD705T)