1CL3 Search Results

Contextual Info: KODENSHI CORP ' E5E E -. : 7 T i - h $ H '7 |-— SE4Et.Qfl D DQQQQ71 M • k PHOTODIODES SP-ICL3 is 3 ^ 7 S ' V ^ t A M L tz, /J'KTM&fffitefc hy-f^-K T'-T o h7-fJl/? —ft £ <7 SP-1CL3R2 b b fj £ t o DIMENSIONS (Unit:mm) The SP-1CL3 is a high-sensitivity photodiode mounted in a

Contextual Info: KODENSHI CORP, E L-IC L3 is 3^-tr ^ 5 >y SSE D S242baa i T - 1 r|- l| DIMENSIONS (Unit: mm L fc ^ W * G a A s jJ? ^ f t ? * * - KT-fo o m o o ifi? l / - # i : U fc y , 'j'S H ia k s ^ if t s t c a a - e r . The EL-1CL3 is a high-power GaAs IRED mounted in a 3$5

Kodenshi Corp

Contextual Info: ML-1CL3 赤外発光ダイオード INFRARED EMITTING DIODES GaAlAs ML-1CL3は3φセラミックステムを使用した高出力GaAlAs赤外発行ダイオードです。 The ML-1CL3 is a high-power GaAlAs IRED mounted in a 3φ ceramic packagge. 最大定格 MAXIMUM RATINGS

Contextual Info: CL-1CL3 赤外発光ダイオード INFRARED EMITTING DIODES GaAlAs タイプに比べて 高くなっています。 The CL-1CL3 is a high-power GaAlAs IRED mounted in a 3φ ceramic package. The output power is high

2SA968-2SA968A

Abstract: 2SA968B 2SA968A transistor 2sC2238 2sa968 2sc2238 2SC2238 2SA968 3RE30 PNP 2SA968 transistor 2sa968b
Contextual Info: SILICON PNP E P IT A X IA L TR A N SIS TO R P C T P R O C ESS o mijmtam 1CL3MAJC. O M £ S * * ii4 § ffl O Power A m p lifie r O D riv e r • 1-7 • 2S C 2 2 3 8 ¿ a > - 7 ' U • Can Stag e A p p lic a tio n s . A m p lifie r A p p lic a tio n s . :

2SD5250

Abstract: 2SD525 transistor 2sd525 a935 2SD525-Y 2SD525R 2SD525-0 AC75 A 935 2SD525Y
Contextual Info: * 2/ ' J D V N P N = » E I R ^ + H B h 5 > 2; ^ SILICON NPN T RIPLE DIFFUSED M ESA TRANSISTOR o % o u m m 2 s d 525 m Power Unit Amplifier Applications in 1CL3MAX. É f¿ 3 .6 ± X Z O e-î • x m z i H i - p i t ^ y m t i S K i s v t - r •. • ¡SiHET-fo

st1a

Contextual Info: 2SK532 S / U D ^ N ^ ^ U M O S JB T O a jR h ^ S ^ C w - M O S n a «• x * -^-íí I mm O D C - D C =1 > '< - ? m O Í - ? t# * 1CL3MAX K 7 - Í 7ffl 7.0 0 5 .2 ± X Z U * ^ S íí^ ü ^ o l : R d s ( o n ) = 0 .0 7 0 ( íg ifc ) • : |Y fs j = 5 S (üájl) ( I d = 6 A )

Contextual Info: フォトトランジスタ PHOTOTRANSISTORS ST-1CL3H ST-1CL3Hは3φセラミックステムを使用した高感度のシリコンフ •外形寸法 DIMENSIONS（Unit : mm） ォトトランジスタです。小型で低価格ですので、アレー状にしたり小

Contextual Info: ࡈࠜ࠻࠻࡜ࡦࠫࠬ࠲ 2*16164#05+56145 ST-1CL3H 56%.* ߪ‫ޔ‬Ǿ࠮࡜ࡒ࠶ࠢࠬ࠹ࡓࠍ૶↪ߒߚ㜞ᗵᐲߩࠪ࡝ࠦࡦࡈ ‫ع‬ᄖᒻኸᴺ‫&ޓ‬+/'05+105㧔7PKVOO㧕 ࠜ࠻࠻࡜ࡦࠫࠬ࠲ߢߔ‫ޕ‬ዊဳߢૐଔᩰߢߔߩߢ‫ࠅߚߒߦ⁁࡯࡟ࠕޔ‬ዊ

Contextual Info: 赤外発光ダイオード GaAs INFRARED EMITTING DIODES(GaAs) EL-1CL3 EL-1CL3は３φセラミックステムを使用した高出力GaAs赤外発光 •外形寸法 DIMENSIONS（Unit : mm） ダイオードです。小型で低価格ですのでアレー状にしたり、小型機

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1327 U nit in mm STROBE FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. • • • • 1CL3MAX. MIN. hpE of 70 at —2V, —8A —10A Rated Collector Current MAX. V cE (sat)of -0.5V at -8 A Ic 20W at 25°C Case Temperature

Contextual Info: Infrared Emitting Diodes GaAlAs KODENSHI CL-1CL3 DIMENSIONS (Unit : mm) The CL-1CL3 is a high-power GaAlAs IRED mounted in a 3ø ceramic package. The output power is so high compared to GaAs IREDs. FEATURES •Compact (ø3mm) •Wide beam angle •Low-cost

sp-8k kodenshi

Contextual Info: Photo diodes KODENSHI SP-1CL3・SP-1CL3R2 DIMENSIONS Unit : mm The SP-1CL3 is a high-sensitivity photodiode mounted in a 3ø low-cost ceramic package. The 1CL3R2 photodiode, with daylight filter, is available in the same package. FEATURES •Compact (ø3mm)

EL-1CL3

Contextual Info: EL-1CL3 赤外発光ダイオード INFRARED EMITTING DIODES GaAs EL-1CL3は３φセラミックステムを使用した高出力GaAs赤外発光ダイオードです。小型で低価格ですのでアレー状にし たり、小型機器、民生機器に最適です。

ML- 1CL3

Abstract: Kodenshi, infrared
Contextual Info: Infrared Emitting Diodes GaAlAs KODENSHI ML-1CL3 DIMENSIONS (Unit : mm) The ML-1CL3 is a high-power GaAlAs IRED mounted in a 3øceramic package. FEATURES •ø3 ceramic base •Peak emission wavelength λ p=865nm •Wide beam angle ± 53deg. APPLICATIONS

Contextual Info: KODENSHI CORP r z z _ : 7 * K $ > SSE D S242bQfl OOOQlbT T • m — PHOTOPARLINGTONS PT-ICL3{ix 3 ^ 7 5 DIMENSIONS Unit:mm 7 * b y - U>(•> X 't a 'J'ITl£ffitST-t«t7U-^IC L / ; y v 'j 'g m 5 f f l K £ m s § c & i s - C '? o The PT-1CL3 is a high-output NPN silicon photodarlington

diode cl3

Contextual Info: UNCONTROLLED DOCUMENT 2.00 PART NU M BER REV. O E D - E L - 1CL3 B REV, E.C.N. NUM BER AND A E.C.N. #10BRDR. B E .C .N . # 1 0 5 9 3 . R E V IS IO N C O M M E N T S DATE 1 -7 -9 3 2 -1 4 -0 0 [0 .0 7 9 ] MAX. ELECTRO-OPTICAL CHARACTERISTICS Ta =25'C PARAMETER

SF10B41

Abstract: SF10D41 SF10J41 SF10D TOSHIBA THYRISTOR SF10G41
Contextual Info: THYRISTOR SF10 B,D,G,J 41 SILICON DIFFUSED TYPE Unit M E D I U M P O W E R C O N T R O L APPLICA T I O N S . 1CL3MAX. in m m 00.6 ±Q.g FEATURES: . Repetitive Peak Off-State Voltage : = 100 - 600V Repetitive Peak Reverse Voltage . Average On-State Current

2SC2233

Contextual Info: 2SC2233 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. 1CL3MAX. ¡¿ & 6 ± a e dT x FEATURES: I . ä i! . Large Collector Current Capability. . Large Collector Power Dissipation Capability. tfíi_ 1.5M AX. MAXIMUM RATINGS Ta=25°C

phototransistor array

Abstract: Kodenshi Corp
Contextual Info: Photo transistors KODENSHI KOREA CORP ST-1CL3H The ST-1CL3H is a high sensitivity NPN silicon [Unit : mm] Dimensions phototransistor mounted in a 3Φ Low-cost ceramic φ package, designed for use as low-cost detector array in consumer and industrial applications.

Contextual Info: 赤外発光ダイオード GaAlAs INFRARED EMITTING DIODES(GaAlAs) ML-1CL3 ML-1CL3は３φセラミックステムを使用した高出力GaAlAs赤外発 •外形寸法 DIMENSIONS（Unit : mm） 光ダイオードです。 MAX φ3.2 ceramic package.

Contextual Info: フォトダイオード PHOTODIODES SP-1CL3R2 SP-1CL3R2は3φセラミックステムを使用、小型で低価格な高感 •外形寸法 DIMENSIONS（Unit : mm） 度シリコンフォトダイオードです。 2±0.2 MAX 2 MAX φ3.2 The SP-1CL3R2 is a high-sensitivity photodiode mounted in a 3

WPT-1CL3H

Abstract: wpt1cl3h Rise time of photo transistor phototransistor array
Contextual Info: Photo Transistor Waitrony Module No.: WPT-1CL3H 1. General Description: WPT-1CL3H is a high sensitivity NPN silicon phototransistor mounted in a 03mm low-cost ceramic package. This small phototransistor is designed for use as low-cost detector array in consumer and industrial applications.

Contextual Info: DATE REVISIONS REV DRAWING NUMBER REV OED-SP-1CL3 2.00 [0.079] MAX. 2.00 [0.079] CATHODE 15.50 [0.610] ø0.30 [0.012] RELIABILITY NOTE OUR MANY YEARS OF EXPERIENCE DATA ACCUMULATION INDICATE THAT SOLDER HEAT IS A MAJOR CAUSE OF EARLY AND FUTURE FAILURE. PLEASE PAY ATTENTION TO YOUR SOLDERING PROCESS.