1CH725G Search Results
1CH725G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - Pi(jB = 32 dBm at f = 8 GHz • High gain - G-|dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C) |
OCR Scan |
S8837A S8837A | |
TCD5251
Abstract: TCD5251BD TCD5251B
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OCR Scan |
TCD5251BD TCD5251BD /50--o T0T725Q 1CH725G 0G212 TCD5251 TCD5251B |