1BL3 Search Results

Contextual Info: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*

6ES7223-1BL30-0XB0

Abstract: 16DO SM1223 1223 digital transistor 16DI S7-1200
Contextual Info: 6ES7223-1BL30-0XB0 Page 1 Product data sheet 6ES7223-1BL30-0XB0 SIMATIC S7-1200, DIGITAL I/O SM 1223, 16DI / 16DO, 16DI DC 24 V, SINK/SOURCE, 16DO, TRANSISTOR 0.5A Supply voltages Rated value 24 V DC Yes permissible range, lower limit DC 20.4 V permissible range, upper limit (DC)

1bl3

Abstract: diode 1bl3 JEDEC DO-214AA DO-214AA package power rating 18L3 CBVK741B019 F63TNR F924 MBRS130L SS22
Contextual Info: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA COLOR BAND DENOTES CATHODE TOP MARK: 1BL3 1.0 Ampere Schottky Power Rectifiers

1bl3

Abstract: diode 1bl3 MBRS130L on 1bl3
Contextual Info: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

1bl3

Contextual Info: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

diode 1bl3

Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

1bl3

Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

1BL3 marking code

Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MG15G1AL3

Abstract: MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-33c1a 2-22b1a MG200
Contextual Info: 213 — — * 2 -OA E2 Bl E1/ K ( C 2 ) B2 : NC Ì Ì 3 . x-f -v-f (T, ttfc*Œ z -f 7 f- > y m i (V) on I, V CE ft V be + J- î 7 y • 3 u ? ?fi' a m - - - K = 25°C ) V f ( u s) L I Ul , t , (V) R !h (,-c) , Ip ( u s) I? V be di/dt (A) CC/W) m - F §15

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

1bl3 motorola

Abstract: diode 1bl3 MBRS130LT3 1bl3 on 1bl3 MBRS130LT3 marking schottky power rectifier MOTOROLA motorola diode device data diode 1bl3 141
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon

1bl3 motorola

Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

diode 1bl3

Abstract: MBRS130LT3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS130LT3

Abstract: 403A-03
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

403A-03

Abstract: diode 1bl3 1BL3 1bl3 motorola
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky Pow er R e ctifier MBRS130LT3 Surface Mount Power Package . . . Employs the S chottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with

1bl3

Abstract: diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR
Contextual Info: MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

1bl3

Abstract: on 1bl3 diode 1bl3 MBRS130L
Contextual Info: MBRS130L MBRS130L Features • 0.185 4.699 0.160 (4.064) 0.083 (2.108) 0.075 (1.905 ) Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. 2 0.155 (3.937) 0.130 (3.302)

diode 1bl3

Abstract: 1bl3 MBRS130LT3 5M MARKING CODE SCHOTTKY DIODE marking code 1BL3 schottky diode SMB marking code 120 AS 031 1BL3 544 MBRS130LT3G on 1bl3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: MBRS130LT3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: FAIRCHILD S E M IC O N D U C T O R tm MBRS130L SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

SM1223

Abstract: S71200 S7-1200 simatic s7 - 1200 1PL30-0XB0 SM223 siemens S7-1200 siemens de 6es7 350
Contextual Info: SM 1223 digital input/output module - Industry Mall - Siemens DE Page 1 of 6 Home Full Navigation Path Siemens Industry Catalogue Automation technology Automation Systems SIMATIC Industrial Automation Systems Controllers SIMATIC S7 modular controllers S7-1200