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    1B80 Search Results

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    1B80 Price and Stock

    Murata Manufacturing Co Ltd LQW15AN6N1B80D

    FIXED IND 6.1NH 1.6A 0.056OHM SM
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    DigiKey LQW15AN6N1B80D Cut Tape 6,410 1
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    LQW15AN6N1B80D Digi-Reel 6,410 1
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    Mouser Electronics LQW15AN6N1B80D 3,098
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    TME LQW15AN6N1B80D 10,000
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    Avnet Abacus LQW15AN6N1B80D 9 Weeks 10,000
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    TE Connectivity CPF0201B80R6E1

    CPF 0201 80R6 0.1% 25PPM 1K RL
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    DigiKey CPF0201B80R6E1 Cut Tape 3,770 1
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    Mouser Electronics CPF0201B80R6E1 824
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    Newark CPF0201B80R6E1 Cut Tape 880 1
    • 1 $0.915
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    Qualcomm B39781B8005P810

    RF DUPLEXER 751MHZ/782MHZ 9SMD
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    DigiKey B39781B8005P810 Digi-Reel 1,989 1
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    B39781B8005P810 Cut Tape 1,989 1
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    Richardson RFPD B39781B8005P810 295 1
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    B39781B8005P810 5,000
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    TE Connectivity YR1B806RCC

    RES 806 OHM 0.1% 1/4W AXIAL
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    DigiKey YR1B806RCC Cut Tape 1,698 1
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    Mouser Electronics YR1B806RCC 284
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    Master Electronics YR1B806RCC 2,273
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    Qualcomm B39851B8030P810

    RF DUPLEXER 9SMD NO LEAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B39851B8030P810 Cut Tape 1,526 1
    • 1 $3.3
    • 10 $2.69
    • 100 $2.1949
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    B39851B8030P810 Digi-Reel 1,526 1
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    Richardson RFPD B39851B8030P810 449 1
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    1B80 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1 B 80 Gedore Torque COMBINATION SPANNER 80 MM Original PDF

    1B80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


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    78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD PDF

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3581D AT49BV320D AT49BV320DT SA70 AT49BV PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    W19B320AT/B w19b320 PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


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    M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48 PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


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    W28J320B/T 16/4M PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


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    W28F321BT/TT 32MBIT W28F321, W28F321 PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3582B AT49BV322D AT49BV322DT AT49BV PDF

    LH28F320BFHE-PBTL80

    Abstract: AP-007-SW-E
    Text: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.


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    LH28F320BFHE-PBTL80 LHF32F12 AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F320BFHE-PBTL80 AP-007-SW-E PDF

    FY520

    Abstract: FW533 MT28F322D18
    Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


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    MT28F322D18FH 100ns MT28F322D18FH FY520 FW533 MT28F322D18 PDF

    M28W320BB

    Abstract: M28W320BT
    Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■


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    M28W320BT M28W320BB 100ns TFBGA47 M28W320BB M28W320BT PDF

    M6805

    Abstract: M68HC08 MC68HC908GR32A MC68HC908GR48A MC68HC908GR60A CPU08 M146805 freescale superflash
    Text: MC68HC908GR60A MC68HC908GR48A MC68HC908GR32A Data Sheet M68HC08 Microcontrollers MC68HC908GR60A Rev. 5 04/2007 freescale.com MC68HC908GR60A MC68HC908GR48A MC68HC908GR32A Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be


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    MC68HC908GR60A MC68HC908GR48A MC68HC908GR32A M68HC08 M6805 M68HC08 MC68HC908GR32A MC68HC908GR48A MC68HC908GR60A CPU08 M146805 freescale superflash PDF

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV6402M S29GL128N 110R PDF

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G PDF

    Untitled

    Abstract: No abstract text available
    Text: 54ACT11253, 74ACT11253 DUAL 1-0F-4 DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS T I0 1 13— D 3 1 10, MARC H 106«— R EVISED MARCH 1B80 • Inputs are TTL-Voltage Compatible 54A C T 11 2 S 3 . . . J P A C K A G E 7 4A C T 1 1 2 5 3 . . . D O R N P ACKA G E


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    54ACT11253, 74ACT11253 ACT11153 300-mll PDF

    SN54ABT18502

    Abstract: H TR 1A60 texas instruments 486 TR 1A60
    Text: SN54ABT18502 SCAN TEST DEVICE WITH 18-BIT REGISTERED BUS TRANSCEIVER SCBS109C - AU G U S T 1992 - RE V IS E D AU G U S T 1994 SCOPE Instruction Set - IEEE Standard 1149.1-1990 Required Instructions, Optional INTEST, CLAMP, and HIGHZ - Parallel-Signature Analysis at Inputs With


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    SN54ABT18502 18-BIT SCBS109C H TR 1A60 texas instruments 486 TR 1A60 PDF

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


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    Am29DL32xC 16-Bit) 29DL32xC L323C PDF

    Untitled

    Abstract: No abstract text available
    Text: THE INFÜRNATICN CONTAINED HEREIN IS CONSIJERO 'PROPRIETARY' TD BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED DR IISCLDSED V/JTHDUT THE WRITTEN APPROVAL OF BEL FUSE INC. LED POLARITY PIN 10 PIN 11 + + PIN 3 — — CDLDR GREEN DRANGE LED ELEC TRIC A L CHARACTERISTICS @ 2 5 T


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    35DjuH 100MHz 10GDHMS lBS004 0810-2H8R-N9 PDF