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    1B000 Search Results

    1B000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    51761-B0002406AALF Amphenol Communications Solutions PwrBlade®, Power Connectors, 24S 6P Right Angle Receptacle, Solder To Board Visit Amphenol Communications Solutions
    51721-B0001204AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 12S 4P Right Angle Header. Visit Amphenol Communications Solutions
    SE1B00023111111 Amphenol Communications Solutions Slim Cool Edge 0.65mm, Surface mount, 12 power pins, Zero signal pin, Vertical Visit Amphenol Communications Solutions
    51741-B0002406AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 24S 6P Vertical Receptacle. Visit Amphenol Communications Solutions
    51721-B0002406AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 24S 6P Right Angle Header. Visit Amphenol Communications Solutions
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    1B000 Price and Stock

    Panasonic Electronic Components EVP-AT2L1B000

    SWITCH TACTILE SPST-NO 0.02A 15V
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    DigiKey EVP-AT2L1B000 Reel 10,000 10,000
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    Mouser Electronics EVP-AT2L1B000 6,412
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    TTI EVP-AT2L1B000 Ammo Pack 10,000 100
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    Panasonic Electronic Components EVP-BK4A1B000

    SWITCH TACTILE SPST-NO 0.02A 15V
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    DigiKey EVP-BK4A1B000 Reel 10,000 10,000
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    Mouser Electronics EVP-BK4A1B000 15,491
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    TTI EVP-BK4A1B000 Reel 10,000
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    EVP-BK4A1B000 Ammo Pack 10,000
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    Infineon Technologies AG S6BP401AB1SN1B000

    IC REG 6OUT BUCK/LNR SYNC 40QFN
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    DigiKey S6BP401AB1SN1B000 Reel 4,000 4,000
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    Renesas Electronics Corporation 5P49V5901B000NLGI8

    IC CLOCK GENERATOR 24QFN
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    DigiKey 5P49V5901B000NLGI8 Cut Tape 3,316 1
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    5P49V5901B000NLGI8 Digi-Reel 3,316 1
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    Mouser Electronics 5P49V5901B000NLGI8 1,388
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    Win Source Electronics 5P49V5901B000NLGI8 48,600
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    Renesas Electronics Corporation 5P35021B-000NDGI

    IC CLOCK GENERATOR 20QFN
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    DigiKey 5P35021B-000NDGI Tray 1,001 1
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    Avnet Silica 5P35021B-000NDGI 13 Weeks 624
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    1B000 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1B00000000000 EATON Over 600 obsolete distributor catalogs now available on the Datasheet Archive - BUTTON, BLACK, NO LENS, FOR NGR ROCKER SWITCH Scan PDF

    1B000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B885

    Abstract: SJ033911
    Text: O Z LOO IPS 'ON Q N I M V Ü Q # f M ±0.3 ' |g |g B lg llg |§ lS lil§ llg l0 lg llillillip ilg llg llillg llil0 l§ llg l0 0 l§ l0 1 1 § l 3=n m 1-. JPÍH P O F - O - 2 1 3 E ( 0 3 . 08 > < N 0 T E 1 .A P P L I C A B L E C O N T A C T FI-XCB-1-1B000(SJ0B3911


    OCR Scan     		FI-XCB-1-1B000 SJ03391 SJ03B91 JACS-1753-10 JAHL-1753-10 B885 SJ033911 PDF

    Untitled

    Abstract: No abstract text available
    Text: A-BRIGHT A-BRIGHT INDUSTRIAL CO., LTD. Part No. AL-00-1B000C80 High Power „ Package Dimension: Notes: 1. All dimensions are in millimeter. 2. An epoxy meniscus may extend about. 1.5mm 0.059" down to the lead 3. Tolerances unless Dimension ±0.25mm. 1 Diff No.


    Original     		AL-00-1B000C80 treatment60 PDF

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan     		50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30 PDF

    MX25L1635D

    Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
    Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5


    Original     		MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


    Original     		MX25L1673E PM1912 PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


    Original     		78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD PDF

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		3581D AT49BV320D AT49BV320DT SA70 AT49BV PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		W19B320AT/B w19b320 PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


    Original     		PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48 PDF

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


    Original     		Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


    Original     		PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		W28J320B/T 16/4M PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


    Original     		W28F321BT/TT 32MBIT W28F321, W28F321 PDF

    Hitachi DSA0094

    Abstract: IEEE754 SH7708 SH7708R SH7708S SH7718R
    Text: SH7718R Hardware Manual ADE-602-103 Rev. 1.0 10/12/98 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the


    Original     		SH7718R ADE-602-103 SH7708R Hitachi DSA0094 IEEE754 SH7708 SH7708S SH7718R PDF

    LHF00L14

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		LHF00L14 LHF00L14) EL163055 LHF00L14 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


    OCR Scan     		Am29LV033C 63-ball 40-pin PDF

    29F032B

    Abstract: m29f032b
    Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology


    OCR Scan     		Am29F032B 20-year 29F032B 29F032B m29f032b PDF

    T1A16

    Abstract: 29LV116
    Text: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and


    OCR Scan     		Am29LV116B ar116B T1A16 29LV116 PDF