1N6373 Search Results

Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive

Contextual Info: 1N6373 thru 1N6389 I n ter n a tio n a l S e m ic o n d u c to r , I n c . TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION 5.0 to 45 VOLTS 1500 WATT PEAK POWER 5.0 WATT STEADY STATE 1N5908 MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C am bient unless otherwise specified

1N6377

Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389

Contextual Info: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction

icte-5rlg

Abstract: 12RL 1N6373 1N6374 1N6375 1N6376 1N6377 1N6380 1N6381 ICTE-36
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have

88356

Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty

Contextual Info: 1N6373 thru 1N6389 or MPTE-5 thru MPTE-45C 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional

1N6373

Abstract: 1N6374 1N6375 1N6376 1N6381 1N6382 1N6389 ICTE-36 MPTE-45
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

UJT 2N2646 specification

Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

"Transient Voltage Suppressor"

Abstract: diode 1n6376 1N6373 MPTE-45 IEC61000-4-5 MPTE-5 1N6373 SMCJ6389 1N6381 1N6382 1N6389
Contextual Info: 1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirectional and bidirectional

Contextual Info: DIGITRON SEMICONDUCTORS 1N6373 – 1N6389 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR • Unidirectional and bidirectional TVS series for thru-hole mounting • Suppresses transients up to 1500 watts @ 10/1000 s • tclamping 0 volts to V(BR min):

ICTE-5

Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

1N6373

Abstract: 1N6376 1N6374 1N6375 1N6377 1N6381 1N6382 1N6389
Contextual Info: 1N6373 − 1N6381 Series ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Cathode Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

in6376

Abstract: IN6377 in6373 IN6378 IN6375 IN6379 IN-6375 lN6373 suppressors 1N6373
Contextual Info: 1N6373 THRU 1N6381 +» Central Semiconductor Corp. Central semiconductor Corp. 1.5KW TRANSIENT SUPPRESSOR EPOXY MOLDED AXIAL LEAD CASE 145 A dam s Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N6373 Series types are Epoxy Molded Axial Lead Transient

1N6373

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6373A SERIES 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive com ponents from high vo lt­

Contextual Info: Enabling Energy Efficient Solutions Product Overview Created on: 10/26/2011 1N6373: 1500 Watt MOSORB Transient Voltage Suppressor, 6.0 V Unidir For complete documentation, see the data sheet Product Description Mosorb devices are designed to protect voltage sensitive components from high volt-age, high energy transients. They have

28 volt transzorb

Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)

1N6373

Abstract: 1N6374 1N6386 ICTE18C J-STD-002
Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive

88356

Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
Contextual Info: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty

1N6373

Abstract: 1N6374 1N6386 ICTE18C J-STD-002
Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive

1N63xx

Abstract: 1N6373
Contextual Info: 1N6373 − 1N6381 Series ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Cathode Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

1N6373

Abstract: 1N6374 ICTE-36 zener 1N6373 1N6375 1N6378 1N6381 1N6382 1N6389 MPTE-45
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a

Contextual Info: 1N6373 thru 1N6389 MPTE-5 thru MPTE-45C Transient Voltage Suppressor Breakdown Voltage 5.0 to 45 Volts Peak Pulse Power 1500 Watts Features  CASE: DO-201AD DO-27       Breakdown Voltages (VBR) from 5.0 to 45V 1500W peak pulse power capability with a 10/1000 s