M5M4V18165CJ
Abstract: MITSUBISHI date code mitsubishi date year M5M4V18165C mitsubishi assembly year mitsubishi Manufacturing year mitsubishi year code 1048576bit DRAM
Text: MITSUBISHI LSIs Preliminary Spec. MH1V645CWXPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
|
Original
|
PDF
|
MH1V645CWXPJ-6
4194304-BIT
1048576-BIT
64-BIT)
1Mx64bit
1048576-word
64-bit
MIT-DS-0030-1
24/Mar
M5M4V18165CJ
MITSUBISHI date code
mitsubishi date year
M5M4V18165C
mitsubishi assembly year
mitsubishi Manufacturing year
mitsubishi year code
1048576bit DRAM
|
ga15 engine wiring diagram
Abstract: IBM11M4730C4M
Text: Discontinued 12/98 - last order; 9/99 last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T4644MC IBM13T1649NC 1M x 64 SDRAM SO DIMM Features • 144 Pin (emerging) JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1Mx64 Synchronous DRAM SO DIMM
|
Original
|
PDF
|
IBM11M4730C4M
E12/10,
IBM13T4644MC
IBM13T1649NC
1Mx64
ga15 engine wiring diagram
|
641006EWS1G05TC
Abstract: No abstract text available
Text: 1M x 64 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 641006EWS1G05TC 144 Pin 1Mx64 EDO SODIMM Unbuffered, 1k Self Refresh, 3.3V with SPD Pin Assignment General Description Pin# The 641006EWS1G05TC is a 1Mx64 bit, 5 chip, 3.3V, 144 Pin DIMM module consisting of (4) 1Mx16
|
Original
|
PDF
|
641006EWS1G05TC
1Mx64
1Mx16
256x8
A10/AP
DS456-1
|
Untitled
Abstract: No abstract text available
Text: IBM11M1640B1M x 6410/10, 5.0V, AuMMDL19DSU-001015527. IBM11M1640B 1M x 64 DRAM MODULE Features • Optimized for byte-write non-parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 1Mx64 Fast Page Mode DIMM
|
Original
|
PDF
|
IBM11M1640B1M
AuMMDL19DSU-001015527.
IBM11M1640B
1Mx64
110ns
130ns
SA14-4605-02
|
HY51V18164B
Abstract: HY51V18164
Text: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy
|
Original
|
PDF
|
HYM5V64124A
1Mx64-bit
64-bit
HY51V18164B
HYM5V64124AQG/ATQG/ASLQG/ASLTQG
DQ0-DQ63)
1CE16-10-APR96
144pin
HY51V18164
|
Untitled
Abstract: No abstract text available
Text: cP IITSU June 1998 Revision 1.0 data sheet GOB 1UV6432 A/B -(70/80/10)Q-S 8MByte (1Mx64) CMOS Synchronous Graphic Module General Description The G O B I UV6432(A/B)-(70/80/10)Q-S is a high performance, 8-megabyte synchronous, graphic RAM module organized as 1M
|
OCR Scan
|
PDF
|
1UV6432
1Mx64)
UV6432
144-pin,
MB81G163222-
512Kx32
UV6432A
UV6432B
143Mhz
125Mhz
|
Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E D C 1 U V 6 4 1 1 !4 -(60/70)(J/T)G - S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The ED C 1U V 641(1/4)-(60/70)(JA T )G -S is a high pe rform ance, EDO (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule
|
OCR Scan
|
PDF
|
1Mx64)
168-pins,
MB81V1
-DS-20391
|
4715-01
Abstract: No abstract text available
Text: IBM13N1649NC IBM13N1809NC Preliminary 1M X 64/80 1 Bank Unbuffered SDRAM Module Features • • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency fcK tcK Uc Clock Frequency
|
OCR Scan
|
PDF
|
IBM13N1649NC
IBM13N1809NC
1Mx64/80
SA14-4715-01
4715-01
|
Untitled
Abstract: No abstract text available
Text: <p July 1996 Revision 1.0 HATA G H F F T - SDC1UV6412- 67/84/100/125 T-S 8MByte (1Mx64) CMOS Synchronous DRAM Module General Description The SDC1U V6412-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1 M
|
OCR Scan
|
PDF
|
SDC1UV6412-
1Mx64)
V6412-
168-pin,
11171622A-
1Mx16
125MHz)
100MHz)
84MHz)
|
Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a
|
OCR Scan
|
PDF
|
1Mx64)
144-pins,
B81V1
|
Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 5 B 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity applications System Performance Benefits: - • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60
|
OCR Scan
|
PDF
|
1Mx64
75H3412
SA14-4619-01
IBM11M1645B
|
DQ45-A
Abstract: 033J1
Text: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168-Pin JEDEC Standard, Unbuffered 8-Byte Dual In-Line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: i. CAS Latency : fcK I Clock Frequency itcK i Clock Cycle
|
OCR Scan
|
PDF
|
IBM13N1649NC
IBM13N1809NC
168-Pin
1Mx64/80
DQ45-A
033J1
|
Untitled
Abstract: No abstract text available
Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The
|
OCR Scan
|
PDF
|
KMM466F104AT-L
KMM466F124AT-L
KMM466F124AT-L
1Mx64
1Mx16,
KMM466F10
1Mx16bit
44-pin
|
Untitled
Abstract: No abstract text available
Text: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENER AL DESCRIPTION FEATURES • Part Identification - KMM364E124BJ 1024 cycles/16ms, SOJ The Samsung KMM364E124BJ is a 1M bit x 64
|
OCR Scan
|
PDF
|
KMM364E124B
KMM364E124BJ
1Mx64
1Mx16,
KMM364E124BJ
cycles/16ms,
1Mx16bit
42-pin
|
|
|
Untitled
Abstract: No abstract text available
Text: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
|
OCR Scan
|
PDF
|
V645C
4194304-BIT
1048576-BIT
64-BIT)
1Mx64bit
1048576-word
64-bit
MIT-DS-0030-1
24/Mar
|
Untitled
Abstract: No abstract text available
Text: cP IITSU July 1997 Revision 1.0 data sheet EDC1UV641 1/4 B-60(J/T)G-S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641 (1/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module orga nized as 1M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
|
OCR Scan
|
PDF
|
EDC1UV641(
1Mx64)
EDC1UV641
168-pin,
MB81V1
165B-60
|
SII Front Main Board version 2.0
Abstract: date code samsung capacitors
Text: SGRAM MODULE KMM965G112Q P N / KMM966G112Q(P)N KMM965G112Q(P)N / KMM966G112Q(P)N SGRAM SODIMM 1Mx64 SGRAM SODIMM based on 512Kx32, 2K Refresh, 3.3V Synchronous Graphie RAMs FEATURES GENERAL DESCRIPTION Performance Range Part NO. Max. Freq. (tcc) KMM965G112Q(P)N-G7
|
OCR Scan
|
PDF
|
KMM965G112Q
KMM966G112Q
1Mx64
512Kx32,
KMM965
G112Q
SII Front Main Board version 2.0
date code samsung capacitors
|
Untitled
Abstract: No abstract text available
Text: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
PDF
|
KMM466S104CT_
144pin
KMM466S104CT
1Mx64
1Mx16
400mil
144-pin
|
Untitled
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
PDF
|
KMM366S104CTL
KMM366S104CTL
1Mx64
1Mx16
400mil
166-pin
168-pin
|
IBM 1Mx4
Abstract: 1MX16
Text: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V
|
OCR Scan
|
PDF
|
1Mx64
364C120C
KMM364C124A
C-421000AA64
HB56A164EJ
364V120C
364V124A
372C122C
372C125A
05H0902
IBM 1Mx4
1MX16
|
BVTE16
Abstract: No abstract text available
Text: »M YU H D W I • HYM7V64100C Q-SERIES > SO-DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100C is high speed 3.3Volt CM OS Synchronous DRAM module consisting of four 1Mx16 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
|
OCR Scan
|
PDF
|
HYM7V64100C
1Mx64
1Mx16
44-pin
168-pin
33fiF
HYM7V641OOC
HYM7V64100CLTQG-10
BVTE16
|
Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 5 L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 ;tRAC i RAS Access Time 60ns 70ns ;tcAC 1CAS Access Time 20ns
|
OCR Scan
|
PDF
|
1Mx64
104ns
124ns
|
Untitled
Abstract: No abstract text available
Text: IBM13N1649NC IBM13N1809NC 1M X 64/80 1 B ank U nbuffered S D R A M M odule Features 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM Performance: -10 CAS Latency I fcK ! t CK i Clock Frequency i Clock 100
|
OCR Scan
|
PDF
|
IBM13N1649NC
IBM13N1809NC
1Mx64/80
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C120CJ/CT KMM364C120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM based on 1M x4,1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C120C is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C120C consists of sixteen CMOS
|
OCR Scan
|
PDF
|
KMM364C120CJ/CT
KMM364C120CJ/CT
1Mx64
KMM364C120C
KMM364C120C-7
300mil
48pin
|