19MAR03 Search Results

Contextual Info: 7 DRAWING MADE IN THIRD ANGLE PROJECTION T H I S DRAWING 15 UNPUBLI5HED RELEASED FOR P UB LICATIO N C O P Y R I G H T 19 BY AMP I N C O RP O RA TE D. A L L I N T E R N A T I O N A L 6 5 19 <3> 3 4 2 LOC RIGHTS RESERVED. AD REV I 5 I 0 N 5 DI ST 00 ZONE

72193

Abstract: Si6467BDQ
Contextual Info: SPICE Device Model Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6413DQ

Contextual Info: SPICE Device Model Si6413DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

2322 vishay

Abstract: D235C ND 433 A
Contextual Info: 2322 574 1. Vishay BCc Surface Mount Multilayer Varistors FEATURES ∑ Surface mount multilayer surge suppressor ∑ Inherent bidirectional clamping ∑ Low capacitance types available ∑ Excellent energy/volume ratio ∑ Suitable for wave or reflow soldering

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. DIST 22 AA BY TYCO ELECTRONIC5 CORPORATION. REVISIONS LTR DESCRIPTION H 2 0 .8 3 A [. 1 6 .1 3 635 3 .8 1 [. 1 5 0 ] ] [. ] - 1 0 . 6 7 - ► 420 APVD

Si6463BDQ

Contextual Info: SPICE Device Model Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3481DV

Contextual Info: SPICE Device Model Si3481DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

1469001-1

Contextual Info: 501-568 Qualification Test Report 04Apr05 Rev A EC 0990-0435-05 Two, Three and Four Pair HM-Zd Connectors | 1. INTRODUCTION 1.1. Purpose Testing was performed on Tyco Electronics Two and Four Pair HM-Zd Connectors to determine their conformance to the requirements of Product Specification 108-2055 Revision B.

D9D SOT

Abstract: 966L ic ad 7550 8850 HM
Contextual Info: 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 6 5 RELEASED BY 19 AMP 3 4 2 <3> PROJ E CT I ON FOR P U B L I C A T I O N INCORPORATED. A LL I N T E R N A T I ON A L LOC 19 RI GHTS D I ST 00 AD RESERVED. REV I 5 I 0 N 5 ZONE D E5CR[PTIO N

PWM 003

Abstract: CPU08 HC08 M68HC08 M68HC908 MC68HC908QT4 MC68HC908QY1 MC68HC908QY2 MC68HC908QY4 transistor bra 94
Contextual Info: Freescale Semiconductor Application Note AN2475/D 3/2003 Freescale Semiconductor, Inc. Generating a PWM Signal Modulated by an Analog Input Using the MC68HC908QY4 Microcontroller By: Alfredo Olmos Andre Vilas Boas Marcus Serra Espindola Brazil Semiconductor Technology Center

Contextual Info: RECOMMENDED PANEL CUTOUT EMPFOHLENER FRONTPLATTEN AUSSCHNITT TOP OF PCB LP 12.29 [.484] 0.10 [.004] MAX 20.60 [.811] 16.66 [.656] 8 11.43±0.13 [.450±.005] RECOMMENDED PCB LAYOUT COMPONENT MOUNTING SIDE LOCHBILD FUER LEITERPLATTE (BESTUECKUNGSSEITE) TOL ±0.05 [.002] UNLESS NOTED

72191

Abstract: Si4911DY
Contextual Info: SPICE Device Model Si4911DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

IT3200

Abstract: IT5325BE RAKON XTAL TCXO rakon marking code C3 SMD ic RAKON TCXO IT5300B IT530 GR201
Contextual Info: IT5325BE 20.0 MHz SPECIFICATION MODEL IT5300B SMD Temperature Compensated Crystal Oscillators High Stability SMD TCXO using an analogue IC for compensation. Frequencies ranging from 13MHz to 30MHz. Product Description The IT5300B employs an analogue IC for the oscillator and

Si6443DQ

Contextual Info: SPICE Device Model Si6443DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3491DV

Contextual Info: SPICE Device Model Si3491DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

transistor bra 94

Abstract: HC908QY4 CPU08 HC08 M68HC08 M68HC908 MC68HC908QT4 MC68HC908QY1 MC68HC908QY2 MC68HC908QY4
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2475/D 3/2003 Freescale Semiconductor, Inc. Generating a PWM Signal Modulated by an Analog Input Using the MC68HC908QY4 Microcontroller By: Alfredo Olmos Andre Vilas Boas Marcus Serra Espindola Brazil Semiconductor Technology Center

Contextual Info: Order this document by MRFIC1856/D Freescale Semiconductor, Inc. Advance Information DEVICE ON LIFETIME BUY Freescale Semiconductor, Inc. Dual-Band/Dual-Mode pHEMT GaAs IPA The MRFIC1856 is designed for dual–band subscriber equipment applications at 3.6 V in the cellular 800 MHz and PCS (1900 MHz) bands.

MRFIC1856

Abstract: MRFIC1856R2 VG12
Contextual Info: Order this document by MRFIC1856/D Freescale Semiconductor, Inc. Advance Information Freescale Semiconductor, Inc. DEVICE ON LIFETIME BUY Dual-Band/Dual-Mode pHEMT GaAs IPA The MRFIC1856 is designed for dual–band subscriber equipment applications at 3.6 V in the cellular 800 MHz and PCS (1900 MHz) bands.

Contextual Info: 2322 574 1. Vishay BCc Surface Mount Multilayer Varistors FEATURES • Surface mount multilayer surge suppressor • Inherent bidirectional clamping • Low capacitance types available • Excellent energy/volume ratio • Suitable for wave or reflow soldering

72190

Abstract: Si4431BDY
Contextual Info: SPICE Device Model Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6411DQ

Contextual Info: SPICE Device Model Si6411DQ Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 7 DRAWI NG THIS MADE IN DRAWI NG THIRD 15 ANGL E UNPUBLI5HED COPYRIGHT 6 5 19 RELEASED BY 3 4 2 <3> PROJECTION AMP FOR PUBLICATION INCORPORATED. ALL I NTERNATI ONAL LOC 19 RIGHTS DI ST 00 AD RESERVED. DIA 3 REV I 5 I0N5 ZO N E LTR D E 5 C R [P T IO N ECN AD4218