1902 TRANSISTOR Search Results

TRANSISTOR REPLACEMENT ECG

Abstract: ECG Semiconductors transistor 171 DO-40 diode ECG190 ECG1906
Contextual Info: PHILIPS E C G INC ECG Semiconductors 17E ECG 1902, ECG1906, ECG 1908 / 3-Terminal, Positive Fixed V R .200 ' Features • Output current of 100 m A • Internal thermal overload protection • Output transistor safe area protection • Internal short circuit current limit

2N6794

Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Contextual Info: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds

1902

Contextual Info: W TE LE D Y N E COMPONENTS 1902 HIGH-VOLTAGE VIDEO DRIVER FOR CRT MONITORS FEATURES APPLICATIONS • ■ ■ ■ ■ Output Signals Into 10 pF. 90 Vp.p Rise and Fall Times @ 50 Vp.p.2.5 ns Linear Gain Adjustment for Matching

1902

Contextual Info: TELEDYNE COMPONENTS 3bE » • ÔTlTbGE G0D7bflü 1 * T S C WTELEDYNE COMPONENTS 1902 HIGH-VOLTAGE VIDEO DRIVER FOR CRT MONITORS FEATURES APPLICATIONS ■ ■ ■ ■ ■ Output Signals Into 10 pF.90 Vp.p Rise and Fall Times @ 50 Vp.p. 2.5 ns

2N1025

Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
Contextual Info: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.

TL902

Contextual Info: AWT 1902 TX POWER MMIC Ehrftoqcs* A d va n ce d P roduct Inform ation Rev 3 Your GaAs IC Source DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone

sd 1476-1

Abstract: 1902 transistor SD1907 sd1912
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS [M lg fô O iU G IO T O iO Ê S RF & MICROWAVE TRANSISTORS 55 . 108 MHz Package Type SD SD SD SD 1476* 1 1457 1460 1483 (1) .2 X .450 SQ 4LFL .£00 4LFL .500 4LFL .2 X .450 SQ 4LFL Coinflg. CE CE CE CE Vcc pout

TRANSISTOR T 410

Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
Contextual Info: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect

BF410C

Abstract: a5175
Contextual Info: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect

bf 671

Abstract: BF116 BFW93 667 2N BFW 72 NPN/bf 671 699 NPN 2N3571 ESM 182 BF183
Contextual Info: TO 18 CB 6 CB 146 f 139 B (CB 76) Silicon NPN transistors, VH F - UH F amplification and oscillation T8mb = 25 0C Transistors N P N silisium, amplification e i oscillation U H F et V H F Case T yp « Boitier ptot (mW) VCEO (V) f GP (dB) h 21 E min max >C

D1902

Abstract: SD1902 2SB1266 2sb126 2SD1902 2SD1902+equivalent
Contextual Info: Ordering num ber: EN 2538A I SAÊÊYO No.2538A 2SB1266/2SD1902 PNP/NPN Triple Diffused Planar Type Silicon Transistors AF Power Amp Ap p l ic a t io n s Features . Suitable for sets whose height is restricted . Wide ASO adoption of MBIT process . High reliability

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

p217s

Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
Contextual Info: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate

BD807

Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
Contextual Info: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

2sa925

Abstract: 2SC1901 2SA905 138B 309B
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2N6823

Abstract: transistor 3s4 2n6823 transistor AN569 motorola mosfet
Contextual Info: MOTOROLA SC X S T R S /R 1HE D I F b3fc>?254 G O f l i b m T 3 | S MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6823 Designer's Data Sheet Pow er Field Effect Transistor N -C h an n el Enh an cem en t-M ode S ilic o n G ate T M O S TMOS POWER FETs 3 AMPERES ros on = 2 8 OHMS

1amx

Abstract: transistor marking 1am RN1903 marking 1am
Contextual Info: TOSHIBA RN1901-RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 2 .1 ± 0.1 , L 2 5 ± Q .l Including Two Devices in US6

MRF6401

Contextual Info: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er am plifiers in the 1 .0 - 2 .0 GHz frequency range. It has been sp e cifica lly

Contextual Info: Order this data sheet MOTOROLA by M R F10350H /D SEMICONDUCTOR TECHNICAL DATA MRF10350H* Microwave Pulse Power Transistor 350 Watts Peak NPN 1025-1150 MHz C P T iO Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

D10N2

Abstract: marking dC
Contextual Info: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak

pa 2030a

Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
Contextual Info: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e

Contextual Info: International IOR Rectifier PD - 9 .1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

mmbth10lt1

Contextual Info: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 M o t o r o la P r e f e r r e d D e v ic e 2 EMITTER CASE 318-08, STY LE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage

Contextual Info: MOTOROLA Order this document by BC161-16/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC161-16 COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit v CEO -6 0 Vdc Collector-Base Voltage v CBO -6 0