Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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18w transistor
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
18w transistor
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Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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Untitled
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
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RA18H1213G-101
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the
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RA18H1213G
RA18H1213G
18-watt
30-GHz
RA18H1213G-101
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smd diode code 18W
Abstract: 18w smd transistor smd transistor code 18W 04n60c2 Q67040-S4304 SMD Transistor 18W transistor SMD MARKING CODE 18w SDP06S60 SPB04N60C2 SPP04N60C2
Text: SPP04N60C2 SPB04N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.95 W Extreme d v/dt rated
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SPP04N60C2
SPB04N60C2
P-TO263-3-2
P-TO220-3-1
Q67040-S4304
04N60C2
Q67040-S4305
smd diode code 18W
18w smd transistor
smd transistor code 18W
04n60c2
Q67040-S4304
SMD Transistor 18W
transistor SMD MARKING CODE 18w
SDP06S60
SPB04N60C2
SPP04N60C2
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DM6030HK
Abstract: MAAP-000079-PED000 DM4030LD MAAP-000079-PKG001 MAAP-000079-SMB001 AN3016 MAAP-000079-SMB004 MAAPGM0079-DIE diemat
Text: Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev — Preliminary Datasheet Features ♦ 18 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation
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MAAP-000079-PED000
MAAP-000079-PED000
10-mil
DM6030HK
DM4030LD
MAAP-000079-PKG001
MAAP-000079-SMB001
AN3016
MAAP-000079-SMB004
MAAPGM0079-DIE
diemat
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Untitled
Abstract: No abstract text available
Text: Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev A Preliminary Datasheet Features ♦ 18 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation
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MAAP-000079-PED000
MAAP-000079-PED000
10-mil
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transistor marking code 18W
Abstract: RA18H1213G RA18H1213G-101 f1270 Transistor 18W on
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
transistor marking code 18W
RA18H1213G-101
f1270
Transistor 18W on
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smd transistor code 18W
Abstract: smd diode code 18W 04n60c2 transistor SMD MARKING CODE 18w 18w smd transistor SMD Transistor 18W 04N60 SPD04N60C2 04N60C SDP06S60
Text: SPD04N60C2 SPU04N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.95 W · Extreme dv/dt rated
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SPD04N60C2
SPU04N60C2
P-TO251
P-TO252
Q67040-S4307
04N60C2
Q67040-S4306
smd transistor code 18W
smd diode code 18W
04n60c2
transistor SMD MARKING CODE 18w
18w smd transistor
SMD Transistor 18W
04N60
SPD04N60C2
04N60C
SDP06S60
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QPP-022
Abstract: No abstract text available
Text: QPP-022 180W, 869-894MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-022 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-022
869-894MHz
QPP-022
H10549)
H10895)
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26W TC-DEL LAMP
Abstract: electronic ballast 18w cfl lamp 18w smd transistor ELECTRONIC BALLAST 18W SCHEMATIC 18w cfl circuit circuit diagram electronic ballast for 18W 4 pin TC-DEL smd 18w ELECTRONIC BALLAST LAMP IR2520 SCHEMATIC ELECTRONIC BALLAST DIAGRAM for PL-C 26W
Text: Application Note AN-1062 IRPLMB1E - 25W 230VAC Small Size Ballast Using IR2520D By Cecilia Contenti Table of Contents Page Overview .1 Features .2
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AN-1062
230VAC
IR2520D
IR2520D
26W TC-DEL LAMP
electronic ballast 18w cfl lamp
18w smd transistor
ELECTRONIC BALLAST 18W SCHEMATIC
18w cfl circuit
circuit diagram electronic ballast for 18W 4 pin
TC-DEL
smd 18w
ELECTRONIC BALLAST LAMP IR2520 SCHEMATIC
ELECTRONIC BALLAST DIAGRAM for PL-C 26W
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RA18H1213G
Abstract: RA18H1213G-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
RA18H1213G-01
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MULTIWATT15 package
Abstract: MULTIWATT15 TDA7481
Text: TDA7481 18W MONO CLASS-D AMPLIFIER 18W OUTPUT POWER: RL = 8Ω/4Ω; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION Multiwatt15
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TDA7481
Multiwatt15
TDA7481
Multiwatt15
100nF
MULTIWATT15 package
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33PFX4
Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING
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2SC2782
175MHz,
2-13C1A
961001EAA2'
33PFX4
2SC2782
NPN 2SC2782
transistor 2sc2782
18W 12 transistor
1BW TRANSISTOR
10ID
10A ferrite bead
132pF
156pF
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transistor 2sc2782
Abstract: NPN 2SC2782
Text: TOSHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS. U nit in mm ia 4 ± a 5 O utput Power : Po = 80W Min. (f = 175MHz, V c c = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2782
175MHz,
2-13C1A
961001EAA2'
transistor 2sc2782
NPN 2SC2782
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Mitsubishi transistor databook
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •
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2SC3022
2SC3022
520MHz,
Mitsubishi transistor databook
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2SC2628
Abstract: NPN EPITAXIAL PLANAR TYPE 175mhz 1w 18W 12 transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2628
2SC2628
175MHz
175MHz,
NPN EPITAXIAL PLANAR TYPE 175mhz 1w
18W 12 transistor
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10w 900MA
Abstract: F100-F113 18W 12 transistor f128 transistor F114f 18w transistor F-111
Text: M IC R O -O H M CORPORATION M anufacturers of Quality Resistors W irew o u n d F u s e R e s is to rs S e r ie s F-100 G e n e ra l S p e cific a tio n s : Resistance Range: 0.20 - 200£2 Resistance Tolerance: 10%, 5% and 3% Blow Characteristics: Per table
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F-100
50ppm/
30ppm/
10w 900MA
F100-F113
18W 12 transistor
f128 transistor
F114f
18w transistor
F-111
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2628
2SC2628
175MHz
175MHz,
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 2 VHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 80W Min. (f= 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
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2SC2782
175MHz,
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: M IC R O -O H M CORPORATION M a n u fa c tu re rs o f Q uality R esistors Wirewound Fuse Resistors Series F-100 General Specifications: Resistance Range: 0.212 - 20011 Resistance Tolerance: 10%, 5% and 3% Blow Characteristics: Per table Continuous Operation: Per table
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F-100
50ppm/Â
30ppm/Â
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TRANSISTOR J 5804
Abstract: TRANSISTOR J 5804 EQUIVALENT TRANSISTOR J 5804 NPN j 5804 transistor 2SC2628 2sc262 8-32UNC-3A RF POWER TRANSISTOR NPN vhf
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTIO N OUTLINE DRAW ING 2SC 2628 is a silicon NPIM epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m ob ile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2628
2SC2628
TRANSISTOR J 5804
TRANSISTOR J 5804 EQUIVALENT
TRANSISTOR J 5804 NPN
j 5804 transistor
2sc262
8-32UNC-3A
RF POWER TRANSISTOR NPN vhf
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TDA7481 5 7 . KfflD g[Si llLi(gra©lii!lD(gi 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW 18W OUTPUT POWER: RL = 8i2; THD = 10% HIGH EFFICIENCY WIDE SUPPLY VOLTAGE RANGE (UP TO ±25V SPLIT SUPPLY OVERVOLTAGE PROTECTION ST-BY AND MUTE FEATURES
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TDA7481
att15
TDA7481
Multiwatt15
100nF
10OnF
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