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IXYS Corporation IXFV18N60PS MOSFET N-CH 600V 18A PLUS-220SMD
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18N60PS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	18N60P 18N60PS 18N60P	PDF
IXTV18N60P Abstract: PLUS220SMD Contextual Info: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous	Original	18N60P 18N60PS PLUS220 IXTV18N60P 2005IXYS IXTV18N60P PLUS220SMD	PDF
PLUS220SMD Contextual Info: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS = 600 V ID25 = 18 A Ω RDS on ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	18N60P 18N60PS 18N60P PLUS220SMD	PDF
N-channel MOSFET to-247 Abstract: PLUS220SMD Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr = = ≤ ≤ 600 V 18 A Ω 400 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	18N60P 18N60PS O-247 PLUS220 15lts N-channel MOSFET to-247 PLUS220SMD	PDF
18N60P Abstract: PLUS220SMD IXFH18N60P 18N60PS 18N60 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS	Original	18N60P 18N60PS 18N60P PLUS220SMD IXFH18N60P 18N60PS 18N60	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	18N60P 18N60PS O-247 PLU30 18N60P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF