18APR11 Search Results
18APR11 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: A4 REVISED PER ECO 11 005139 18APR11 RK HMR A4 |
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18APR11 | |
100 20L A1 diode
Abstract: SQD30N05-20L-GE3
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SQD30N05-20L AEC-Q101 O-252 O-252 SQD30N05-20L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 100 20L A1 diode SQD30N05-20L-GE3 | |
Contextual Info: SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-252 TrenchFET Power MOSFET Package with Low Thermal Resistance |
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SQD50N04-4m1 AEC-Q101 O-252 O-252 SQD50N04-4m1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
sud35n10Contextual Info: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch |
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SUD35N10-26P O-252 SUD35N10-26P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sud35n10 | |
sud40n10-25-e3Contextual Info: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested |
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SUD40N10-25 O-252 SUD40N10-25 SUD40N10-25-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sud40n10-25-e3 | |
ILC-0402
Abstract: ILC0402ER1N0S ILC0402ER1N2S ILC0402ER1N5S ILC0402ER1N8S ILC0402ER2N2S ILC0402ER2N7S ILC0402ER3N3S ILC0402ER3N9S ILC0402ER4N7S
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ILC-0402 2002/95/EC 11-Mar-11 ILC-0402 ILC0402ER1N0S ILC0402ER1N2S ILC0402ER1N5S ILC0402ER1N8S ILC0402ER2N2S ILC0402ER2N7S ILC0402ER3N3S ILC0402ER3N9S ILC0402ER4N7S | |
Contextual Info: ILC-0603 Vishay Dale Surface Mount, Multi Layer High Frequency Ceramic Inductors FEATURES • • • • High reliability Surface mountable Reflow or wave solderable Tape and reel packaging per EIA specifications: 4000 pieces on 7" reel • Compliant to RoHS Directive 2002/95/EC |
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ILC-0603 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C |
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UL94-V0 E323964 25-OCT-11 20-SEP-11 18-APR-11 01-SEP-10 | |
SMD Magnetics
Abstract: smd marking code pJ 1219 SMD PJ 899
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vse-db0059-1201e SMD Magnetics smd marking code pJ 1219 SMD PJ 899 | |
Contextual Info: SUD50P04-08 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SUD50P04-08 2002/95/EC O-252 SUD50P04-08-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SM6S10 thru SM6S36A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability |
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SM6S10 SM6S36A ISO7637-2 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-218AB 11-Mar-11 | |
ILC-0603
Abstract: ILC0603ER1N0S ILC0603ER1N2S ILC0603ER1N5S ILC0603ER1N8S ILC0603ER2N2S ILC0603ER2N7S ILC0603ER3N3S ILC0603ER3N9S ILC0603ER4N7S
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ILC-0603 2002/95/EC 11-Mar-11 ILC-0603 ILC0603ER1N0S ILC0603ER1N2S ILC0603ER1N5S ILC0603ER1N8S ILC0603ER2N2S ILC0603ER2N7S ILC0603ER3N3S ILC0603ER3N9S ILC0603ER4N7S | |
Contextual Info: SQD40N04-10A www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.010 RDS(on) () at VGS = 4.5 V 0.014 ID (A) |
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SQD40N04-10A AEC-Q101 2002/95/EC O-252 SQD40N04-10A-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SUD45P03-09 2002/95/EC O-252 SUD45P03-09-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available |
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SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P-E3 11-Mar-11 | |
Contextual Info: SQD50P08-25L Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) • TrenchFET Power MOSFET |
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SQD50P08-25L 2002/95/EC AEC-Q101 O-252 O-252 SQD50P08-25L-GE3 11-Mar-11 | |
Contextual Info: SQD50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.013 ID (A) |
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SQD50N06-09L 2002/95/EC AEC-Q101 O-252 O-252 SQD50N06-09L-GE3 11-Mar-11 | |
Contextual Info: SQD50N03-06P Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd |
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SQD50N03-06P 2002/95/EC AEC-Q101 O-252 O-252 SQD50N03-06P-GE3 11-Mar-11 | |
sqd19p06
Abstract: diode 1919
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SQD19P06-60L 2002/95/EC AEC-Q101 O-252 O-252 SQD19P06-60L-GE3 11-Mar-11 sqd19p06 diode 1919 | |
Contextual Info: SUD50P06-15 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V d - 50 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Load Switch |
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SUD50P06-15 O-252 SUD50P06-15-GE3 11-Mar-11 | |
Contextual Info: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested |
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SUD50N03-11 O-252 SUD50N03-11-E3 11-Mar-11 | |
Contextual Info: SUD50N03-12P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 a ID (A) 0.0120 at VGS = 10 V 17.5 0.0175 at VGS = 4.5 V 14.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC |
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SUD50N03-12P 2002/95/EC O-252 SUD50N03-12P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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18APR11 18APR11 -70JASTSÃ FOAM80S | |
Contextual Info: SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0060 RDS(on) () at VGS = 4.5 V 0.0085 |
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SQD50N03-06P AEC-Q101 O-252 SQD50N03-06P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |