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Infineon Technologies AG SPP17N80C3XKSA1 MOSFET N-CH 800V 17A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP17N80C3XKSA1	Tube	1,866		1	1 $4.76 10 $4.76 100 $2.4206 1000 $1.91 10000 $1.91	Buy Now
Avnet Americas ()	SPP17N80C3XKSA1	Tube	211	15 Weeks	50	1 - 10 - 100 $1.014 1000 $0.93754 10000 $0.93754	Buy Now
	SPP17N80C3XKSA1	Tube			1	1 $3.17 10 $3.14 100 $2.87 1000 $2.87 10000 $2.87	Buy Now
Mouser Electronics	SPP17N80C3XKSA1		421			1 $4.71 10 $4.35 100 $2.47 1000 $1.99 10000 $1.99	Buy Now
Newark	SPP17N80C3XKSA1	Bulk	654		1	1 $3.17 10 $3.14 100 $2.87 1000 $2.41 10000 $2.41	Buy Now
Bristol Electronics	SPP17N80C3XKSA1		13			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Rochester Electronics	SPP17N80C3XKSA1		386		1	1 - 10 - 100 $1.86 1000 $1.67 10000 $1.57	Buy Now
Rutronik	SPP17N80C3XKSA1	Tube	650		50	1 - 10 - 100 $1.23 1000 $1.0075 10000 $1.0075	Buy Now
EBV Elektronik	SPP17N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPP17N80C3XKSA1		1,751			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPP17N80C3XKSA1		20,000			1 - 10 - 100 $1.4097 1000 $1.1667 10000 $1.1667	Buy Now
Infineon Technologies AG SPA17N80C3XKSA1 MOSFET N-CH 800V 17A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA17N80C3XKSA1	Tube	498		1	1 $4.59 10 $4.59 100 $2.5774 1000 $1.89775 10000 $1.89775	Buy Now
Avnet Americas	SPA17N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $1.49116 10000 $1.45238	Buy Now
Mouser Electronics	SPA17N80C3XKSA1		494			1 $4.28 10 $4.24 100 $2.32 1000 $1.89 10000 $1.88	Buy Now
Newark ()	SPA17N80C3XKSA1	Bulk			1	1 $3.69 10 $3.62 100 $2.42 1000 $2.19 10000 $2.19	Buy Now
	SPA17N80C3XKSA1	Bulk			1	1 $4.26 10 $4.13 100 $2.34 1000 $2.28 10000 $2.28	Buy Now
Rochester Electronics	SPA17N80C3XKSA1		2,008		1	1 - 10 - 100 $1.77 1000 $1.58 10000 $1.49	Buy Now

Rutronik	SPA17N80C3XKSA1	Tube	500		50	1 - 10 - 100 $2.01 1000 $1.64 10000 $1.64	Buy Now
Chip One Stop	SPA17N80C3XKSA1	Tube	700	0 Weeks, 1 Days	1	1 $3.86 10 $3.06 100 $2.18 1000 $2.06 10000 $2.06	Buy Now
EBV Elektronik	SPA17N80C3XKSA1		6,500	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SPA17N80C3XKSA1		5,000		1	1 - 10 - 100 - 1000 $2.84 10000 $2.63	Buy Now
Vyrian	SPA17N80C3XKSA1		1,095			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPA17N80C3XKSA1		18,500			1 - 10 - 100 $2.0974 1000 $1.8177 10000 $1.8177	Buy Now
Infineon Technologies AG SPB17N80C3ATMA1 MOSFET N-CH 800V 17A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SPB17N80C3ATMA1	Digi-Reel	229		1	1 $4.6 10 $3.446 100 $2.4654 1000 $2.04716 10000 $2.04716	Buy Now
	SPB17N80C3ATMA1	Cut Tape	229		1	1 $4.6 10 $3.446 100 $2.4654 1000 $2.04716 10000 $2.04716	Buy Now
	SPB17N80C3ATMA1	Reel			1,000	1 - 10 - 100 - 1000 $1.9502 10000 $1.9502	Buy Now
Mouser Electronics	SPB17N80C3ATMA1		3,857			1 $4.42 10 $3.26 100 $2.42 1000 $2.07 10000 $2.07	Buy Now
Newark ()	SPB17N80C3ATMA1	Reel			1,000	1 - 10 - 100 - 1000 $2.08 10000 $2.08	Buy Now
	SPB17N80C3ATMA1	Cut Tape			1	1 $4.68 10 $3.93 100 $3.17 1000 $2.41 10000 $2.41	Buy Now
Bristol Electronics	SPB17N80C3ATMA1		38			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Ameya Holding Limited	SPB17N80C3ATMA1		84			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Rutronik	SPB17N80C3ATMA1	Reel	2,000		1,000	1 - 10 - 100 - 1000 $2.12 10000 $1.64	Buy Now
Chip One Stop	SPB17N80C3ATMA1	Cut Tape	2,000	0 Weeks, 1 Days	1	1 $4.29 10 $3.22 100 $2.3 1000 $2 10000 $2	Buy Now
EBV Elektronik	SPB17N80C3ATMA1		83,000	16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SPB17N80C3ATMA1		66,000		1	1 - 10 - 100 - 1000 $2.76 10000 $2.76	Buy Now
Vyrian	SPB17N80C3ATMA1		12,345			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPB17N80C3ATMA1		48,100			1 - 10 - 100 $2.392 1000 $2.073 10000 $2.073	Buy Now
Infineon Technologies AG SPW17N80C3FKSA1 MOSFET N-CH 800V 17A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW17N80C3FKSA1	Tube	207		1	1 $5.37 10 $5.37 100 $2.74367 1000 $2.39024 10000 $2.39024	Buy Now
Avnet Americas ()	SPW17N80C3FKSA1	Tube	240	15 Weeks	30	1 - 10 - 100 $1.8333 1000 $1.7856 10000 $1.7856	Buy Now
	SPW17N80C3FKSA1	Bulk			1	1 $5.69 10 $5.27 100 $2.71 1000 $2.71 10000 $2.71	Buy Now
Mouser Electronics	SPW17N80C3FKSA1		236			1 $5.27 10 $4.99 100 $2.42 1000 $2.41 10000 $2.32	Buy Now
Newark ()	SPW17N80C3FKSA1	Bulk	240		30	1 $1.98 10 $1.98 100 $1.98 1000 $1.98 10000 $1.98	Buy Now
	SPW17N80C3FKSA1	Bulk	190		1	1 $5.54 10 $4.67 100 $2.81 1000 $2.7 10000 $2.7	Buy Now
Rochester Electronics	SPW17N80C3FKSA1		8,328		1	1 - 10 - 100 $2.17 1000 $1.94 10000 $1.82	Buy Now

Rutronik	SPW17N80C3FKSA1	Tube	240		30	1 - 10 - 100 $2.34 1000 $1.92 10000 $1.92	Buy Now
Chip One Stop	SPW17N80C3FKSA1	Tube	73	0 Weeks, 1 Days	1	1 $3.89 10 $3.7 100 $2.02 1000 $1.86 10000 $1.86	Buy Now
EBV Elektronik	SPW17N80C3FKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPW17N80C3FKSA1		1,579			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPW17N80C3FKSA1		47,740			1 - 10 - 100 $2.1389 1000 $1.8333 10000 $1.8333	Buy Now
Infineon Technologies AG SPW17N80C3A MOSFET N-CH 800V 17A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW17N80C3A	Tube			240	1 - 10 - 100 - 1000 $3.21704 10000 $3.21704	Buy Now
Vyrian	SPW17N80C3A		510			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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17N80C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
17N80C3 Abstract: 17n80c 17n80 SPP17N80C3 SPB17N80C3 Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS 800 V Ultra low gate charge RDS(on) 290 m Periodic avalanche rated	Original	SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 17n80c 17n80 SPP17N80C3 SPB17N80C3	PDF
17n80c3 Abstract: SPA17 17n80 Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated	Original	SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 SPA17N80C3 17N80C3 17N80C3 SPA17 17n80	PDF
17n80c3 Abstract: 17n80 spa17n80c3 17N80C SPB17N80C3 UJ14 Q67040-S4441 Contextual Info: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge P-TO220-3-31 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO263-3-2 P-TO220-3-1	Original	SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO-220-3-31: SPP17N80C3 SPA17N80C3 P-TO220-3-1 P-TO263-3-2 Q67040-S4353 17n80c3 17n80 17N80C UJ14 Q67040-S4441	PDF
MOSFET 17N80c3 Abstract: 17n80 Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17n80	PDF
MOSFET 17N80c3 Abstract: smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47 Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47	PDF
Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPB17N80C3 PG-TO263 17N80C3	PDF
17n80 Abstract: 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c Contextual Info: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c	PDF
17N80C3 Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3 Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 290 mΩ	Original	SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 SPP17N80C3 17n80 17n80c SPB17N80C3	PDF
17n80 Abstract: 17n80c SPW17N80C3A 17N80C3 Contextual Info: 17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 17n80 17n80c SPW17N80C3A 17N80C3	PDF
17n80c3 Abstract: 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3 Contextual Info: Preliminary data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated	Original	SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 17n80c3 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3	PDF
Contextual Info: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	SPB17N80C3 PG-TO263 SPB17N80C3 Q67040-S4354 17N80C3	PDF
17N80C3 Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature VDS 800 V RDS on 0.29 Ω ID 17 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17N80C3	PDF
17n80c3 Contextual Info: 17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP17N80C3 PG-TO220-3 17N80C3 17n80c3	PDF
17n80c3 Abstract: UJ14 Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220 SPA17N80C3 Q67040-S4353 17n80c3 UJ14	PDF

SPW17N80C3 INFINEON Abstract: SPW17N80C3 17n80c Contextual Info: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 247 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated	Original	SPW17N80C3 P-TO247 Q67040-S4359 17N80C3 SPW17N80C3 INFINEON SPW17N80C3 17n80c	PDF
17n80 Contextual Info: 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPW17N80C3 PG-TO247 SPW17N80C3 Q67040-S4359 17N80C3 17n80	PDF
MOSFET 17N80c3 Abstract: 17n80c3 17n80c 17n80 JESD22 SPW17N80C3 Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 17n80c3 17n80c 17n80 JESD22 SPW17N80C3	PDF
17n80c3 Contextual Info: Final data 17N80C3, 17N80C3 17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated	Original	SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 Q67040-S4353 17n80c3	PDF
MOSFET 17N80c3 Abstract: Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 MOSFET 17N80c3 Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c	PDF
17n80c3 Abstract: 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 PG-TO220-3-31 SPP17N80C3 Contextual Info: 17N80C3 17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17n80c3 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 SPP17N80C3	PDF
MOSFET 17N80c3 Abstract: 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PG-TO247-3 Contextual Info: 17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPW17N80C3 PG-TO247-3 17N80C3 009-134-A O-247 PG-TO247-3 MOSFET 17N80c3 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80	PDF
spa17n80c3 Abstract: 17n80c3 Contextual Info: 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated	Original	SPA17N80C3 P-TO220-3-31 17N80C3 P-TO220-3-31 Q67040-S4441 spa17n80c3 17n80c3	PDF
17n80c3 Contextual Info: 17N80C3 17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω	Original	SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4353 Q67040-S4354 17n80c3	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF

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17N80C Price and Stock

Infineon Technologies AG SPP17N80C3XKSA1

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Infineon Technologies AG SPB17N80C3ATMA1

Infineon Technologies AG SPW17N80C3FKSA1

Infineon Technologies AG SPW17N80C3A

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PEF 24628