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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 1975 A 3100 A 29000 A 1.02 V 0.320 mΩ Ω Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA1049-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	17H5200 5SYA1049-02 17H5200 17H5000 17H4600 CH-5600
Untitled Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 1975 A 3100 A 29000 A 1.02 V 0.32 mΩ Ω Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA1049-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	17H5200 5SYA1049-02 17H5200 17H5000 17H4600 CH-5600
29000A Abstract: No abstract text available Text: VDSM = 5200 V ITAVM = 1975 A ITRMS = 3100 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 mΩ Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA1049-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	5SYA1049-02 17H5200 17H5200 17H5000 17H4600 67xVDRM CH-5600 29000A
5STP17H5200 Abstract: No abstract text available Text: Key Parameters VDSM = 5200 ITAVM = 1975 ITRMS = 3100 ITSM = 29000 VT0 = 1.02 rT = 0.320 V A A A V mΩ Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA 1049-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	PDF	17H5200 17H5200 17H5000 17H4600 67xVDRM CH-5600 5STP17H5200