17800B Search Results

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C S 17800B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71C(S)17800B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo g y . The

Contextual Info: @ LG Semicon. Co. LTD Description Features The GM 71V S 17800B/BL is the new generation dynamic R A M organized 2,097,152 w ords x 8 bit. G M 71V (S)17800B/BL has realized higher density, higher perform ance and various functions by utilizing a d v a n c e d C M O S p ro c e s s te c h n o lo g y . T he

B56A

Abstract: HB56AW232D-7b
Contextual Info: HB56AW232D Series Preliminary 2,097,152-W ord x 32-Bit High Density Dynamic RAM Module H ITA CH I T he H B 56A W 232D is a 2M x 32 dynam ic RA M Sm all O utline Dual In-line M em ory M odule S O .D IM M , m ounted 4pieces o f 16-M bit DRA M (H M 51W 17800B TT)sealed in T S O P package .

Contextual Info: O K I Semiconductor MSM5 1 17800B_ E 2 G 0043 - 17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17800B achieves high integration, high-speed operation, and low-power

Contextual Info: 17800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-275C Z Rev. 3.0 Jul. 5, 1996 Description The Hitachi HM 51W 17800B is a CM OS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 17800B offers

msm5117800b

Abstract: MSM5117800
Contextual Info: O K I Semiconductor MSM5 1 17800B_ E 2 G 0 0 4 3 - 1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17800B achieves high integration, high-speed operation, and low-power

Contextual Info: VG26 V (S)17800B 2,097,152 x 8-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 2,097,152 words x 8 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used

saa 1070

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C S 17800B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71C(S)17800B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo g y . The

1MX16BIT

Abstract: 16MX1
Contextual Info: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 17800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

Q67100-Q2018

Abstract: Q67100-Q2019 Q67100-Q976 Q67100-Q977
Contextual Info: SIEM EN S 2M X 32-Bit Dynamic RAM Module HYM 322030S/GS-60/-70 Advanced Inform ation 2 097 152 words by 32-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle tim e -60 version 70 ns access time 130 ns cycle tim e (-70 version)

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

64mb edo dram simm

Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
Contextual Info: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt

0423-J

Abstract: 0117800B
Contextual Info: IBM0117800 17800B 2M x 8 D R A M Features • • 2 ,0 9 7 ,1 5 2 word by 8 bit organization • - Active m ax - 1 4 5 m A /1 2 5 m A /1 1 0 m A /9 5 m A - S tan db y (T T L Inputs) - 2 .0 m A (m ax) - S tandby (C M O S Inputs) - 1 .OmA (m ax) S ing le 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply

Contextual Info: •HYUNDAI HY51 17800B.HY51 V16800B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is

WL15

Abstract: WL3 MARKING WL3 MARKING cODE
Contextual Info: SIEM ENS 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode 17800BJ/BSJ-50/-60 17800BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:

Contextual Info: •'H Y U N D A I 17800B, HY51V16800B 2M x 8-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells w ithin the sam e row.

Contextual Info: 17800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-275C Z Rev. 3.0 Jul. 5, 1996 Description The Hitachi 17800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 17800B offers

Siemens 3SB 180

Abstract: TNC 24 mk 2 Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 siemens FLH 5117800BSJ-50
Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 17800BSJ-50/-60/-70 Advanced Information • • • • 2 097 152 words by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: •HYUNDAI H Y 5 1 17 8 0 0 B .H Y 5 1 16 8 0 0 B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is

hy5118160b

Contextual Info: 5V DIMM TYPE SIZE 8 -B y te 8M B As o f '96.3Q DESCRIPTION 1M X 64 PART NO. SPEED REF. ED O .SL H Y M 564104A X /TX 6 0 /7 0 /8 0 4K H Y 5 1 1616 4 B J /B T x 4 H Y M 564124A X /TX H Y M 5 6 4 1 00 N /T N IK H Y 5 1 1816 4 B J /B T x 4 F P M ,L 5 0 /6 0 /7 0

29F400TA

Abstract: FLC31SVC6S MB90P263 15E03L 81V4405C 29lv800ta MB3799 B566 MB47082 29LV800BA
Contextual Info: Index Page Document code Series Series Series Series Series 33 35 36 37 31 - CG51 Series D 5 C B Series D1 F1 Series F2 Series F3 Series 32 112 113 113 113 D S0 4 -2 3 1 1 1 -1 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E D S0 4 -2 0 1 0 0 -3 E F4C Series (T1)