ADC1143
Abstract: ADC1143J ADC1143K INTRONICS
Text: Low Power/High Performance 16-Bit A/D Converter ADC1143 FEATURES Low Power Consumption: 175mW max, VS = ±15V 150mW max, Vs = ±12V Guaranteed Nonlinearity: ±0.006% FSR max ADC1143J ±0.003% FSR max (ADC1143K) Guaranteed Differential Nonlinearity: ±0.006% FSR max (ADC1143J)
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16-Bit
ADC1143
175mW
150mW
ADC1143J)
ADC1143K)
ADC1143
ADC1143J
ADC1143K
INTRONICS
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relay DC5V
Abstract: No abstract text available
Text: HRB1 Relay 1.COIL DATA 1-1.Nominal Voltage 3,5,6,9,12,24VDC 1-2.Coil Resistance Refer to Coil Data Chart 1-3.Operate Voltage Refer to Coil Data Chart 1-4.Release Voltage Refer to Coil Data Chart 1-5.Nominal Power 150mW 175mW 24VDC 2.CONTACT DATA 2-1.Contact Form
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24VDC
150mW
175mW
24VDC)
120VAC/30VDC
125VAC/30VDC
125VA
24VDC
relay DC5V
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LT1227
Abstract: LT1360 LTC1414 LTC1414CGN 330ns
Text: Final Electrical Specifications LTC1414 14-Bit, 2.2Msps, Sampling A/D Converter August 1998 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Sample Rate: 2.2Msps 80dB S/ N + D and 95dB SFDR at 100kHz 78dB S/(N + D) and 86dB SFDR at Nyquist Power Dissipation: 175mW on ±5V Supplies
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LTC1414
14-Bit,
100kHz
175mW
40MHz
28-Pin
LTC1412
12-Bit
LT1227
LT1360
LTC1414
LTC1414CGN
330ns
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Untitled
Abstract: No abstract text available
Text: 21-2178; Rev 0; 11/01 3.125Gbps XAUI Quad Cable Equalizer Features ♦ Four Differential Digital Data “Lanes” at 3.125Gbps ♦ Span 10m 33ft of Twin-Axial Cable ♦ Receiver Equalization Reduces Intersymbol Interference (ISI) ♦ Low Power, 175mW per Channel
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125Gbps
MAX3981
10Gigabit
IEEE-802
44-pin
700mW
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MAX3980
Abstract: MAX3980UGH Teradyne EQUALIZER
Text: 19-2153; Rev 0; 9/01 KIT ATION EVALU E L B A AVAIL 3.125Gbps XAUI Quad Equalizer Features ♦ Four Differential Digital Data “Lanes” at 3.125Gbps ♦ Spans 40in 1.0m of FR4 PC Board ♦ Receiver Equalization Reduces Intersymbol Interference (ISI) ♦ Low-Power, 175mW per Channel
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125Gbps
125Gbps
175mW
IEEE-802
125Gbps)
MAX3980UGH
MAX3980
MAX3980
MAX3980UGH
Teradyne
EQUALIZER
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Untitled
Abstract: No abstract text available
Text: Data Sheet A m p l i fy t h e H u m a n E x p e r i e n c e CDK1305 10-bit, 40 MSPS 175mW A/D Converter The CDK1305 is a 10-bit, low power analog-to-digital converter capable of minimum word rates of 40 MSPS. The on-chip track-and-hold function assures very good dynamic performance without the need for external
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CDK1305
10-bit,
175mW
CDK1305
CDK1304/05/06)
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relay 0,5A 125VAC 2A 30VDC
Abstract: relay 0.5A 125VAC 1A 30VDC relay 1A 125VAC 1A 30VDC
Text: Subminiature 2 amp Relay • 1 Form C SPDT ■ Fully sealed for immersion cleaning ■ Ultra Small Size ■ High Coil Sensitivity 150-175mW ■ UL/CUR recognised ■ Surface Mount Version EV1N Part Numbers EV1N S – C W 12 Type, Single Pole NIL S Coil Voltage
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150-175mW
X10000
relay 0,5A 125VAC 2A 30VDC
relay 0.5A 125VAC 1A 30VDC
relay 1A 125VAC 1A 30VDC
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Untitled
Abstract: No abstract text available
Text: Data Sheet CDK1305 10-bit, 40 MSPS 175mW A/D Converter The CDK1305 is a 10-bit, low power analog-to-digital converter capable of minimum word rates of 40 MSPS. The on-chip track-and-hold function assures very good dynamic performance without the need for external
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CDK1305
10-bit,
175mW
CDK1305
CDK1304/05/06)
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0631D
Abstract: No abstract text available
Text: -. ANALOG Low W DEVICES Power/High Periormance 16-BitAIDConverter ADCl143 I I FEATURES low Power Consumption: 175mW max, Vs 150mW max, Vs = = :!:15V :!:12V Guaranteed Nonlinearity: :!:0.006% FSR max ADC1143J :!:0.003% FSR max (ADC1143K) Guaranteed Differential Nonlinearity:
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ADC1143J)
ADC1143K)
100J1
16-BitAIDConverter
0631D
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CDK1305CSO28
Abstract: CDK1305CTQ32 SOIC-28
Text: Data Sheet A m p l i fy t h e H u m a n E x p e r i e n c e CDK1305 10-bit, 40 MSPS 175mW A/D Converter The CDK1305 is a 10-bit, low power analog-to-digital converter capable of minimum word rates of 40 MSPS. The on-chip track-and-hold function assures very good dynamic performance without the need for external
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CDK1305
10-bit,
175mW
CDK1305
CDK1304/05/06)
CDK1305CSO28
CDK1305CTQ32
SOIC-28
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relay 0,5A 125VAC 2A 30VDC
Abstract: relay 1A 125VAC 1A 30VDC relay 0.5A 125VAC 1A 30VDC relay 1A 125VAC 2A 30VDC
Text: Subminiature 2 amp Relay • 1 Form C SPDT ■ Fully sealed for immersion cleaning ■ Ultra Small Size ■ High Coil Sensitivity 150-175mW ■ UL/CSA recognised ■ Surface Mount Revision EV1N Part Numbers EV1N S – C W 12 Type. Single Pole NIL Throughboard
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150-175mW
125VAC/1A
relay 0,5A 125VAC 2A 30VDC
relay 1A 125VAC 1A 30VDC
relay 0.5A 125VAC 1A 30VDC
relay 1A 125VAC 2A 30VDC
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Untitled
Abstract: No abstract text available
Text: « 6 I B W Ê Î j f t W231024 Winbond 128K X 8 MASK ROM DESCRIPTION FEATURES The W231024 is a High Speed Mask-Programm • Power Consumption : able Read-Only Memory Active : 175mW Typ. Organized as 131072 X 8 Bits and Operates on a Single • Access Time : 200/300 ns (Max.)
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W231024
175mW
W231024
B-1930
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Untitled
Abstract: No abstract text available
Text: MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C4258
175mW
512-cycle
20-Pin
100ns
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Untitled
Abstract: No abstract text available
Text: MEG 1 MEG DRAM X MT4C1024 X 1 DRAM 1 DRAM FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical • All inputs, outputs and clocks are fully TTL
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MT4C1024
175mW
512-cycle
18-Pin
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Untitled
Abstract: No abstract text available
Text: M IC R O N 256K DRAM MT4C4256 X 4 DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C4256
175mW
512-cycle
20-Pin
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cc680
Abstract: No abstract text available
Text: M IC R O N 256K DRAM MT4C4258 X 4 DRAM 256K x 4 DRAM • DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CM O S silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C4258
175mW
512-cycle
20-Pin
C1992,
MUC4258
cc680
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Untitled
Abstract: No abstract text available
Text: HM6148HLP Series 1 0 2 4 -word x 4 -b it High Speed Static CMOS RAM • FEATURES • Low Power Standby and Low Power Operation; Standby:5jiW typ. . Operation: 175mW (typ.) • Fast Access Tim e: 45/55ns (max) • Capability o f Battery Back Up Operation •
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HM6148HLP
175mW
45/55ns
2148H
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le2m
Abstract: No abstract text available
Text: NPN SILICON PLANAR RF TRANSISTOR IS S U E 2 - M A R C H 94 FEATURES * * High fT, 1.3GHz Low noise < 5dB at 500MHz * Power output at 500MHz >175mW ABSOLUTE M A XIM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage V CBO Collector-Emitter Voltage VALU E
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500MHz
175mW
0Q1Q354
001G35S
le2m
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 5SE T> • hlllS4R 0GD424Ö TECHNOLOGY. INC. DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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0GD424Ã
175mW
512-cycle
20-Pin
00D42S7
MT4C4256
T-46-23-77
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Untitled
Abstract: No abstract text available
Text: fVIIC ZR O N MT4C1025 1MEG DRAM 1 DRAM X NIBBLE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard xl pin-out, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V±10% power supply • Low power, 5mW standby; 175mW active, typical
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MT4C1025
175mW
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Untitled
Abstract: No abstract text available
Text: une Final Electrical Specifications LTC1414 TECHNOLOGY 14-Bit, 2.2Msps, Sampling A/D Converter A u g u s t 1998 K O T U IK S D K C R IP T IO • ■ ■ ■ ■ ■ ■ ■ ■ The LTC®1414 is a 14-bit, 2.2Msps, sampling A/D con verter which draws only 175mW from ±5V supplies. This
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LTC1414
14-Bit,
100kHz
175mW
40MHz
28-Pin
14-BIT
LTC1412
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HM6148HLP-45
Abstract: 2148H HM6148HLP intel 2148H
Text: HM6148HLP Series 1 0 2 4 - w o rd X 4 - b it High S p e e d S t a t i c C M O S R A M I FEA TU RES Low Power Standby and Low Power Operation; Standby:5jiW typ. , Operation: 175mW (typ.) Fast Access Time: 45/55ns (max) Capability of Battery Back Up Operation
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HM6148HLP
1024-word
175mW
45/55ns
2148H
TaS70
HM6148HLP-45
2148H
intel 2148H
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HM6148HP-45
Abstract: 2148H
Text: HM6148HP Series 1024-word x 4-bit High Speed Static CMOS RAM • FEA TU RES Fast Access T im e . 45/55ns max Low Power Standby and Low Power Operation; Standby: 100/iW (typ.). Operation: 175mW (typ.) • • •
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HM6148HP
1024-word
45/55ns
100/iW
175mW
2148H
64X64
HM6148HP-45
2148H
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Untitled
Abstract: No abstract text available
Text: I^ IC R Q N 1 MEG DRAM 1 MEG X MT4C1026 X 1 DRAM 1 DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical
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MT4C1026
175mW
512-cycle
18-Pin
20-Pin
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