FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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PC745
Abstract: PC755M8 PCX755B
Text: Features • • • • • • PC755M8 RISC Miprocessor Dedicated 1-megabyte SSRAM L2 Cache, Configured as 128K x 72 21 mm x 25 mm, 255 Ceramic Ball Grid Array CBGA Maximum Core Frequency = 350 MHz Maximum L2 Cache Frequency = 175 MHz Maximum 60x Bus Frequency = 66 MHz
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PC755M8
2164C
PC745
PCX755B
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PC755BM8
Abstract: MCP 67 MV PC745 PC755M8 PCX755B
Text: Features • • • • • • PC755BM8 RISC Miprocessor Dedicated 1-megabyte SSRAM L2 Cache, Configured as 128K x 72 21 mm x 25 mm, 255 Ceramic Ball Grid Array CBGA Maximum Core Frequency = 350 MHz Maximum L2 Cache Frequency = 175 MHz Maximum 60x Bus Frequency = 66 MHz
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PC755BM8
PC755BM8
2164C
MCP 67 MV
PC745
PC755M8
PCX755B
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cop interface
Abstract: PC745 PC755M8 PLL VCO MIL-PRF-38535 X755M
Text: Features • • • • • • PC755M8 RISC Miprocessor Dedicated 1-megabyte SSRAM L2 Cache, Configured as 128K x 72 21 mm x 25 mm, 255 Ceramic Ball Grid Array CBGA Maximum Core Frequency = 350 MHz Maximum L2 Cache Frequency = 175 MHz Maximum 60x Bus Frequency = 66 MHz
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PC755M8
2164B
cop interface
PC745
PLL VCO MIL-PRF-38535
X755M
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tzc 123
Abstract: No abstract text available
Text: Commercial SMA PLUGS RIGHT ANGLE PLUGS, CRIMP TYPE, FOR FLEXIBLE CABLE Cable group 2.6 / 50 / S 2.6 / 50 / D 5 / 50 / S 5 / 50 / D 5.7 / 50 / D Part number Dimensions mm A B C R124 172 120 R124 172 123 R124 174 120 Assembly instructions 18 16,35 5,41 R124 175 123
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SA109
Abstract: imperial m015 WWA38 KM250 WWA-23 rcl 7007 WWA-24 km700
Text: imPERIHL HSfilDIIIC5 An Watts 0.4 0.75 1.0 1.5 2.5 3.0 3.0 4.0 5.0 5.0 5.0 7.0 10. 1.0 1.5 2,0 4.0 5.0 6.0 7.0 10.6 15.0 7.5 12.5 25.0 50.0 7.5 12.5 25.0 50.09 Watts .06 .08 .10 .125 .15 .25 .20 .10 .175 .20 .25 .33 .50 .50 .60 1.0 1.5 2.0 .40 .50 .75 .125
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MIL-R-26
MIL-R-39007
RW-70
RW-69
RW-79
RW-74/RWR-74
RW-67
RW-78/RWR-78
RW-81/RWR-81
RWR-82
SA109
imperial m015
WWA38
KM250
WWA-23
rcl 7007
WWA-24
km700
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FM401
Abstract: FM404 FM407 FM405 FM402 FM403 FM406
Text: LESHAN RADIO COMPANY, LTD. FM401 – FM407 1A 1A GLASS PASSIVATED SMA DIODES TYPE FM401 FM402 FM403 FM404 FM405 FM406 FM407 Marking M01 M02 M03 M04 M05 M06 M07 VRRM V IF (A) V F (V) IRMI(µA) IP8M(A) 50 100 200 400 600 800 1000 1.0 1.10 5.0 30 Package Dimensions
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FM401
FM407
FM402
FM403
FM404
FM405
FM406
214AC
FM401
FM404
FM407
FM405
FM402
FM403
FM406
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transistor M05
Abstract: NESG2031M05-T1-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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NESG2031M05
NESG2031M05-A
NESG2031M05-T1-A
PU10189EJ02V0DS
transistor M05
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Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
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NESG2021M05
NESG2021M05-A
NESG2021M05-T1-A
PU10188EJ02V0DS
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. NESG2021M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • • <R> This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
NESG2021M05
PU10188EJ02V0DS
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. NESG2031M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0035EJ0400 Rev. 4.00 Jun 20, 2012 FEATURES • • • • <R> The device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2031M05
R09DS0035EJ0400
NESG2031M05
PU10189EJ03V0DS
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NESG2031M05
Abstract: NESG2031M05-T1
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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NESG2031M05
PU10189EJ02V0DS
NESG2031M05
NESG2031M05-T1
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NESG2031M05
Abstract: NESG2031M05-T1
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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NESG2031M05
NESG2031M05
NESG2031M05-T1
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NESG2021M05
Abstract: NESG2021M05-T1 transistor s2p
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M05
PU10188EJ02V0DS
NESG2021M05
NESG2021M05-T1
transistor s2p
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
NESG2021M05
NESG2021M05-T1
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2031M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0035EJ0400 Rev. 4.00 Jun 20, 2012 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2031M05
R09DS0035EJ0400
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS vz W ide Tem perature Range Smaller Anti-Solvent Feature Through 100V only Small case sizes as same as VR series, but operating over wide temperature range of — 55— M05°C. VZ High Rifiple Current ^ ^ PJ © •S p e cification s
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OCR Scan
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16X31
16X35
20X40
25X50
18X35
22X50
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ST7FAUDIO
Abstract: st7faudioar9 VN1160 st26025a ST26025 CAR ALTERNATOR REGULATOR testing guide L9777B st VN1160 vnh5180 L9777
Text: Automotive-grade semiconductor devices Selection guide July 2008 Analog Power MEMS Memories Microcontrollers www.st.com/automotive Moving towards a zero-defect capability STMicroelectronics applies an automotive-grade policy designed to deliver products which meet the
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SGAUTAPPL0608
ST7FAUDIO
st7faudioar9
VN1160
st26025a
ST26025
CAR ALTERNATOR REGULATOR testing guide
L9777B
st VN1160
vnh5180
L9777
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VN5160S-E
Abstract: VN5160STR-E VN5160 CDM-AEC-Q100-011
Text: VN5160S-E Single channel high side driver for automotive applications Features Max supply voltage VCC Operating voltage range VCC 4.5 to 36V Max on-state resistance per ch. RON 160 mΩ Current limitation (typ) ILIMH 5.4 A Off state supply current IS 41V
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VN5160S-E
2002/95/EC
VN5160S-E
VN5160STR-E
VN5160
CDM-AEC-Q100-011
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VN5160STR-E
Abstract: VN5160S-E VN5160STR ISO7637 VN5160
Text: VN5160S-E Single channel high side driver for automotive applications Features Max supply voltage VCC 41V Operating voltage range VCC 4.5 to 36V Max on-state resistance per ch. RON 160 mΩ Current limitation (typ) ILIMH 5.4 A Off state supply current IS
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VN5160S-E
2002/95/EC
VN5160S-E
VN5160STR-E
VN5160STR
ISO7637
VN5160
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VNQ5160KTR-E
Abstract: VNQ5160K-E CDM-AEC-Q100-011 ISO7637
Text: VNQ5160K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 36 V Max on-state resistance per ch. RON 160 mΩ PowerSSO-24 Current limitation (typ) ILIMH 5.4 A Off-state supply current
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VNQ5160K-E
PowerSSO-24
2002/95/EC
VNQ5160K-E
VNQ5160KTR-E
CDM-AEC-Q100-011
ISO7637
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CDM-AEC-Q100-011
Abstract: ISO7637 VNQ5160K-E VNQ5160KTR-E c532a
Text: VNQ5160K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 36 V Max on-state resistance per ch. RON 160 mΩ PowerSSO-24 Current limitation (typ) ILIMH 5.4 A Off-state supply current
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VNQ5160K-E
PowerSSO-24
2002/95/EC
VNQ5160K-E
CDM-AEC-Q100-011
ISO7637
VNQ5160KTR-E
c532a
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Untitled
Abstract: No abstract text available
Text: VNQ5160K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 36 V Max on-state resistance per ch. RON 160 mΩ PowerSSO-24 Current limitation (typ) ILIMH 5.4 A Off-state supply current
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VNQ5160K-E
PowerSSO-24
2002/95/EC
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