10kf12
Abstract: R113T B06B-3100-141 BD161 2n3904 d29 LM358T si4431 tl494 F1AJ3 TC351
Text: 12V MH2 26HOLD8 MH1 26HOLD8 SHUT DOWN I_ALARM BAT FULL1 BAT CH_A SYS_SDA SYS_SCL VCC3 VCC B+ 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 CN8 R166 300/F 2 4 6 8 10 12 14 16
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BK2125HS330
B06B-3100-141)
C7S32F)
LM358
2N3904
HSDL-3600
IRR32
IRRX22
10kf12
R113T
B06B-3100-141
BD161
2n3904 d29
LM358T
si4431
tl494
F1AJ3
TC351
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PDF
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SMC1602
Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Text: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3
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CS8406
RA300
RA302
1/16W
SMC1602
SN7002DW
c3231
Q2576
r2561
C3239
C3303
C2651
C5060
U4900
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PDF
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IRF5505
Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT
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TEST10
TEST11
CS8406
RA300
RA302
1/16W
IRF5505
C3427
SN7002DW
LD1807
343S0284
apple AirPort Extreme
h11m
r3361
HC17051
1n914 onsemi
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PDF
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GPI04
Abstract: No abstract text available
Text: 3 2 2 R29 LED5 475 1% B R41 33 2512 VREG R37 33 2512 R5 100 1% C5 C5 OPT Q5 0805 BSS308PE 5 16 17 19 20 C31 10nF S5 21 22 23 Q4 BSS308PE 24 C4 C4 OPT 0805 S4 SDO IB C10 SDI(IC) S10 SCK(ILP) C9 CSB(ILM) S9 ISOMD C8 WDT S8 DRIVE C7 VREG S7 SWTEN C6 VREF1 S6
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BSS308PE
LTC6804IG-2
1942B
GPI04
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Untitled
Abstract: No abstract text available
Text: INSTRUCTION MANUAL 200B-G Tone Probe English .1 Français .9 Español.17 Deutsch.25 Italiano .33 Português do Brasil.41 with Adjustable Volume 200EP-G Tone Probe with Adjustable Volume, Visual Signal Indicator, Headset Jack,
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200B-G
200EP-G
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Untitled
Abstract: No abstract text available
Text: HMC315 / 315E v02.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Typical Applications Features The HMC315 / HMC315E is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation
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HMC315
HMC315E
OC-48
HMC315
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HMC315
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC315 v01.0701 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC315 is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation
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HMC315
HMC315
OC-48
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PDF
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Untitled
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC315 v01.0701 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC315 is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation
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HMC315
HMC315
OC-48
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PDF
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Untitled
Abstract: No abstract text available
Text: HMC315 v01.0701 MICROWAVE CORPORATION GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC315 is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation
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HMC315
HMC315
OC-48
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IC ax 2008 USB FM PLAYER
Abstract: STi7110 IC ax 2008 used for mp3 player le88221 PI7C9X440SL PI7C9X111SL bl3458 pi3eqx6701 PI3EQX5701 PAS5201
Text: Table of Contents PAGE 2 3 About Pericom Applications 13 Products - Signal Integrity 14 17 18 19 PCI Express ReDriver SAS/SATA/XAUI ReDriver Digital Video Signal Integrity DisplayPort, HDMI, DVI USB3 ReDriver 21 Products - Connectivity 23 25 27 33 35 45
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HMC315
Abstract: No abstract text available
Text: HMC315 / 315E v02.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Typical Applications Features The HMC315 / HMC315E is ideal for: Saturated Output Power: +17 dBm • Fiber Optic OC-48 Systems Output IP3: +33 dBm • Microwave Test Instrumentation
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HMC315
HMC315E
OC-48
HMC315
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MICON DU CT OR MJE171 INC lqE 0 | QOG?^^ 2 | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION TO*126 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic • Coliector-Base Voltage • Collector-Emitter Voltage
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OCR Scan
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MJE171
T-33-17
GQG77fe
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PDF
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Untitled
Abstract: No abstract text available
Text: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.
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BD202F;
BD204F
BDX78F
7110fl2t
0042fl5b
T-33-17
OT186
BD201F,
BD203F
BDX77F
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PDF
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b0349
Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
Text: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage
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OCR Scan
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00QTM31
BF870SBF872S
T0126
15A3DIN
b0349
BF871S
BF872S
BF872S TELEFUNKEN
BF869S
BF 872
TRANSISTOR Bf 264
transistor BC 236
41 BF transistor
TRANSISTOR C 2570
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SAV-541
Abstract: SAV-541 S-PARAMETER MODEL SAV541 avago marking -2
Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required
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45-6GHz
ATF-54143
SAV-541+
MMM1362
2002/95/EC)
MMBT3906*
840nH
840nH
SAV-541
SAV-541 S-PARAMETER MODEL
SAV541
avago marking -2
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PDF
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Untitled
Abstract: No abstract text available
Text: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required
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Original
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45-6GHz
ATF-54143
SAV-541+
MMM1362
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PDF
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Untitled
Abstract: No abstract text available
Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required
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45-6GHz
ATF-54143
SAV-541+
MMM1362
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PDF
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Filtronic Compound Semiconductors
Abstract: No abstract text available
Text: FPD1050SOT343 Preliminary Data Sheet LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES: • • • • • • RoHS PACKAGE 22 dBm Output Power P1dB 17 dB Gain at 1.85 GHz 0.7 dB Noise Figure at 1.85 GHz 33 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 6 GHz
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FPD1050SOT343
FPD1050SOT343
22-A114.
J-STD-020C,
Filtronic Compound Semiconductors
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PDF
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D F 331 TRANSISTOR
Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Text: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
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KSD5012
T-33-11
GQG77fe
D F 331 TRANSISTOR
lt 332 diode
samsung tv
NPN Transistor 1A 800V to - 92
C 3311 transistor
transistor t 04 27
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PDF
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c6073
Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
Text: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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RP6152
RP6158
RP6159
RP6707
RP6708
RP6709
RP6710
RP6720
RP6721
RP6722
c6073
C6074
C6091
C6089
1CA033
ar9103
SIL1178
NEC C3568
c6092
U2390
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PDF
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SAV-541
Abstract: SAV-541 S-PARAMETER MODEL "3570 1210" ATF-54143 MMM1362 N8975A ATF-54143 application notes
Text: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required
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45-6GHz
ATF-54143
SAV-541+
MMM1362
2002/95/EC)
SAV-541
SAV-541 S-PARAMETER MODEL
"3570 1210"
ATF-54143
MMM1362
N8975A
ATF-54143 application notes
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PDF
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TRANSISTOR BC 136
Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available
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OCR Scan
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T-33-17
DIN125A
15A3DIN
TRANSISTOR BC 136
transistor BD 140
transistor bd 126
BD 140 transistor
16BD136
transistor bc 138
TRANSISTOR 138
TRANSISTOR BD 136
BD 139 transistor
transistor bd 711
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PDF
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Untitled
Abstract: No abstract text available
Text: SAM SUN G SE MI C O N D U C T OR INC MJE172 D | 7^145 ÛÛQîtTB *f | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cofector-Base Voltage | CoBector-Emitter Voltage
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OCR Scan
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MJE172
T-33-17
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE BSE D • tbS3T31 001733^ S ■ I BFQ54 _ _A T-33-17 PNP 1 GHz WIDEBAND TRANSISTOR The BFQ54 is a pnp transistor in a SO T122 package, primarily intended for M A T V and microwave amplifiers, such as radar systems, spectrum analysers etc.
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OCR Scan
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tbS3T31
BFQ54
T-33-17
BFQ54
BFQ34.
45005B,
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