K9S2808V0C
Abstract: K9S6408V0C K9S5608V0X
Text: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing
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K9S5608V0C/B
K9S2808V0C/B
K9S6408V0C/B
K9S2808V0C
K9S6408V0C
K9S5608V0X
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TIB0
Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
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K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
TIB0
K9F6408Q0C
K9F6408Q0C-B
K9F6408U0C-B
K9F6408U0C-QCB0
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date code marking samsung
Abstract: digital VOICE RECORDER data sheet K9S6408V0A-SSB0 SmartMedia Logical Format K9S3208V0A K9S6408V0A SmartMediaTM Physical Format Specifications A22 T transistor
Text: SmartMediaTM K9S6408V0A-SSB0 Document Title 8M x 8 Bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial issue April 10th 1999 Preliminary 0.1 1. Changed device name - SMFV008A -> K9S6408V0A-SSB0 Sep. 15th 1999 Preliminary
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K9S6408V0A-SSB0
SMFV008A
000us
500us
date code marking samsung
digital VOICE RECORDER data sheet
K9S6408V0A-SSB0
SmartMedia Logical Format
K9S3208V0A
K9S6408V0A
SmartMediaTM Physical Format Specifications
A22 T transistor
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cmos static ram 1mx8 5v
Abstract: No abstract text available
Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V
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K5P6480YCM
1Mx8/512Kx16)
K5P6480TCM-T085
K5P6480YCM-T085
69-Ball
08MAX
cmos static ram 1mx8 5v
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SmartMedia Logical Format
Abstract: date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format ID maker code SmartMedia Physical Format
Text: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia
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K9S3208V0A-SSB0
SMFV004A
SmartMedia Logical Format
date code body marking samsung
date code marking samsung
K9S3208V0A
K9S3208V0A-SSB0
SmartMedia Logical Format ID maker code
SmartMedia Physical Format
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Untitled
Abstract: No abstract text available
Text: Advanced Information SmartMediaTM K9S3208V0B-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History 0.0 Initial Issue Draft Date Remark July 17th 2000 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9S3208V0B-SSB0
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K9F3208W0A-TCB0
Abstract: No abstract text available
Text: K9F3208W0A-TCB0, K9F3208W0A-TIB0 FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 0.1 Data Sheet, 1999 April 10th 1999 Advanced Information Final 1 Added CE don’t care mode during the data-loading and reading
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K9F3208W0A-TCB0,
K9F3208W0A-TIB0
KM29W32000AT
K9F3208W0A-TCB0
KM29W32000AIT
K9F3208W0A-TIB0
K9F3208W0A
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Samsung 6v 6 pin camera
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1999 Preliminary 0.1 1. Revised real-time map-out algorithm refer to technical notes
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K9F6408U0A-TCB0,
K9F6408U0A-TIB0
KM29U64000AT
K9F6408U0A-TCB0
KM29U64000AIT
K9F6408U0A-TIB0
000us
500us
Samsung 6v 6 pin camera
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Untitled
Abstract: No abstract text available
Text: SmartMediaTM SMFV008A Document Title 8M x 8 Bit SmartMediaTM Card Revision History Revision No. History 0.0 Initial Issue 0.1 1. Changed the following items ITEM Before M-die After(A-die) Program Time 1,000us(Max.) 500us(Max.) 0.8V and 2.0V 1.5V Input and output timing levels
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SMFV008A
000us
500us
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Untitled
Abstract: No abstract text available
Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.
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K9F6408Q0C-BCB0
K9F6408Q0C-BIB0
K9F6408U0C-TCB0
K9F6408U0C-TIB0
K9F6408U0C-BCB0
K9F6408U0C-BIB0
K9F6408U0C-VCB0
K9F6408U0C-VIB0
K9F6408U0C-Y
K9F6408U0C
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K9F6408U0C-Q
Abstract: No abstract text available
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
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K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
K9F6408U0C-Q
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K9F6408U0B-TCB0
Abstract: 400F K9F6408U0B K9F6408U0B-TIB0
Text: K9F6408U0B-TCB0, K9F6408U0B-TIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark July 17th 2000 Preliminary Initial issue. 1. Changed endurance : 1 million -> 100K program/erase cycles 0.1 1. Changed don’t care mode in address cycles
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K9F6408U0B-TCB0,
K9F6408U0B-TIB0
K9F6408U0B-TCB0
400F
K9F6408U0B
K9F6408U0B-TIB0
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KM29N16000AT
Abstract: KM29N16000AIT KM29V16000 KM29N16000A
Text: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000AT,
KM29N16000AIT
KM29N16000AT
KM29N16000AIT
KM29V16000
KM29N16000A
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SMFV002
Abstract: "bad block" smartmedia ecc SMFN002
Text: SmartMediaTM SMFV002 Document Title 2M x 8 Bit SmartMedia TM Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. The 1st block(00h block address) is guaranteed to be a good block.
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SMFV002
SMFV002
"bad block" smartmedia ecc
SMFN002
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samsung NAND FSR
Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Text: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000
KM29N16000
-TSOP2-400F
-TSOP2-400R
samsung NAND FSR
29cd16
NAND IC s
CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR
264Byte
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gd243
Abstract: No abstract text available
Text: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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OCR Scan
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KM29N32000TS/RS
250us
gd243
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Untitled
Abstract: No abstract text available
Text: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet, 1999 April 10th 1999 Final
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KM29W32000TS
KM29W32000
2000A
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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Untitled
Abstract: No abstract text available
Text: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
250ms
minV50SI
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M29W8000
Abstract: No abstract text available
Text: Preliminary KM29W8000T, KM29W8000IT FLASH MEMORY Document Title 1M X 8 bit NAND Flash Memory Revision History Revision NPr History 0.0 1.0 Data Sheet 1997 Data Sheet 1998 1. Changed tBERS param eter: 5ms Typ. -> 2ms(Typ.) 10ms(Max.) -> 4ms(Max.) 2. Changed tPRO G param eter: 1,5ms(Max.) -> 1 Oms(Max)
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KM29W8000T,
KM29W8000IT
M29W8000
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Untitled
Abstract: No abstract text available
Text: KM29V32000TS FLASH MEMORY Document Tills 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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KM29V32000TS
29V32000
KM29N32000
KM29W32000
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package.
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KM29V64000T
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TS 4142
Abstract: ro1f
Text: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase
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KM29V64001
200us
71b4142
DD2447D
-TSOP2-400F
74tMAX
-TSQP2-400R
DD24471
TS 4142
ro1f
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A17-A22
Abstract: No abstract text available
Text: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase
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KM29V64000TS/RS
200us
KM29V64000
P2-400F
10max]
-TSOP2-400R
A17-A22
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