16KX4 Search Results

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THMS12 1S20Z-25, -35 ¡DESCRIPTION] The THMS121620Z is a 16,384 words by 12 bits static RAM module constructed on a double sided PC board using three TC55417J 16Kx4 static RAMs in SOJ packages. The THMS121620Z is offered in a 40 pin 500 mil zip module suitable for

QS8886

Contextual Info: QS8886A Q • • • • • • High-Speed CMOS 16KX4 SRAM with Output Enable High Speed Access and Cycle times 8ns/10ns/12ns/15ns Commercial 10ns/12ns/15ns/20ns Military Output Enable feature Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B

Contextual Info: QS8883 High-Speed CMOS 16Kx4 Cache Tag SRAM F E A T U R E S /B E N E F IT S • • • • • High Speed Match Access and Cycle times 10ns, 12ns/15ns/20ns/25ns/35ns Commercial 15ns/20ns/25ns/35ns/45ns Military TTL compatible I/O Low power, high-speed QCMOS technology

Contextual Info: QS8881, QS8882 Q High-Speed CMOS 16Kx4 SRAM with Separate I/O QS8881 QS8882 FEATURES/BENEFITS • • • • • High Speed Access and Cycle times 10ns/12ns/15ns/20ns Commercial JEDEC standard pinout TTL compatible I/O Low power, high-speed QCMOS technology

Contextual Info: QS8883 Q High-Speed CMOS 16Kx4 Cache Tag SRAM Q S8883 FEATURES/BENEFITS • • • • • High Speed Match Access and Cycle times 10ns, 12ns/15ns/20ns/25ns/35ns Commercial 15ns/20ns/25ns/35ns/45ns Military TTL compatible I/O Low power, high-speed QCMOS technology

IMS1624LM

Abstract: IMS1624M IMS1624M-45 IMS1624M-55 inputs and outputs of 7493
Contextual Info: IM S 1 6 2 4 M IM S 1 6 2 4 L M CMOS High Performance 16K x 4 Static RAM MIL-STD-883C m o s DESCRIPTION FEATURES The INMOS IMS1624M is a high performance 16Kx4 CMOS Static RAM processed in full compliance to MILSTD-883C andguaranteed to operate over the full military

THMS161620Z-25

Abstract: THMS161620Z-35
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TH M SI 6 1620Z-25, -35 ¡DESCRIPTION! Z The THMS161620 is a 16,384 words by 16 bits static RAM module constructed on a double sided PC ¿card u 4 i n g four TC55417J 16Kx4 static RAMs in SOJ packages. applications^0 such 1? £

Contextual Info: PRELIMINARY BiCMOS SRAM KM64B65 BiCMOS 16KX4 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12, 15, 20ns max. • Low Power Dissipation S tandby. 20mA (max.) Operating .160mA (max.)

8881

Abstract: DC 8881
Contextual Info: Q S8881, QS8882 Q S 8881 Q S 88 8 2 High-Speed CMOS 16Kx4 SRAM with Separate I/O F E A TU R E S /B E N E FIT S • • • • • High Speed Access and Cycle times 10ns/12ns/15ns/20ns Commercial JEDEC standard pinout TTL compatible I/O Low power, high-speed QCMOS technology

Contextual Info: QS8883 Q High-Speed CMOS 16Kx4 Cache Tag SRAM v Qssssa FEATURES/BENEFITS • High Speed Match Access and Cycle times • 10ns, 12ns/15ns/20ns/25ns/35ns Commercial • 15ns/20ns/25ns/35ns/45ns Military • TTL compatible I/O • Low power, high-speed QCMOS technology

Contextual Info: SRAM Test Configuration Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load +5V Figure 1. GNDto 3.0V 3 ns 1.5V 1.5V See Figures +5V Output test loads for: 4Kx4, 16Kx4, 64Kx4, 32Kx8 &128Kx8 SRAMs Except Low-Power

QS8888

Contextual Info: QS8888 High-Speed CMOS 16Kx4 SRAM with Common I/O Q FEATURES/BENEFITS High Speed Access and Cycle times 8ns/10ns/12ns/l5ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THMS12f 620Z-25,-35 I D E S C R IP T IO N I The THMS121620Z is a 16,384 words by 12 bits static RAM module constructed on a double sided PC board using three TC55417J 16Kx4 static RAMs in SOJ packages. The THMS121620Z is offered in a 40 pin 500 mil zip module suitable for

16kx4

Abstract: 7M464S85 IDT6167 7M464
Contextual Info: i 64K 16K x 4 CMOS STATIC RAMPAK Intentateci Dev ice Technology. Inc IDT7M464 IDT8M464 FEATURES: • • • • • • • • • • • ID T7M 464 e q u iva le n t to JE D E C stan dard 16Kx4 m o n o lith ic RAM 65,536 b it C M O S statis RAM m od ule w ith d e c o u p lin g

MIL-STD-833C

Abstract: 1625M
Contextual Info: mmos IMS 1605M: IMS 1625M: IMS 1629M: IMS 1626/7M: IMS 1635M: IMS 1695M: 64K x 1 16Kx4 16K x 4 with Output Enable 16K x 4 with Separate l/Os 8K x 8 8K x 9 Advance Information FEATURES • INMOS' Very High Speed Double Metal CMOS • Advanced Process-1.2 Micron Design Rules

Contextual Info: QS8885, QS8886 High-Speed CMOS 16Kx4 SRAM with Output Enable Q High Speed Access and Cycle times 8ns/1 Ons/12ns/15ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B

Contextual Info: MDI EDH816H16C25/35/45 High Speed 256K SRAM Module 16Kx16 Static RAM CMOS, High Speed Module Features The EDH816H16C is a 256K bithigh speed CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless chip carriers, mounted on a multilayered ceramic substrate.

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: EDI8417C35LB EDI8417C35QB EDI8417C45LB EDI8417C45QB EDI8417C55LB EDI8417C55QB
Contextual Info: zanni ^ I e“Monolithic ss3zs | T h e f u t u r e . .to d a y . 16Kx4 SRAM CMOS, High Speed Monolithic Features The EDI8417C is a 65,536-Bit high speed CMOS Static RAM organized as 16Kx4. The EDI8417C features fully static operation, requiring no external clocks or timing strobes, and

THMS121620Z-25

Abstract: THMS121620Z-35 CA102
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THMSI 21620Z-25.-35 ¡description ] The T H M S 121620 Z is a 16,384 words by 12 bits static RAM module con s t r u c t e d on a do u b l e sided PC board using three T C55417J 16Kx4 static RAMs in SOJ packages. The T H M S 121620 Z is offered in a 40 pin 500 mil zip mod u l e s uitable for

c5t transistor

Abstract: QS8886 16kx4 8886 bit-slice
Contextual Info: Q S8885, QS8886 High-Speed CMOS 16Kx4 SRAM with Output Enable Q High Speed Access and Cycle times 8ns/1 Ons/12ns/15ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B

QS8888

Contextual Info: QS8888 Q High-Speed CMOS 16Kx4 SRAM with Common I/O Q S8888 F E A T U R E S /B E N E F IT S • • • • • • High Speed Access and Cycle times 8ns/10ns/12ns/15ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology

Contextual Info: EDI816H16C 2 5 / 35/45 ^ E D Module I Th e fu tu re . . . today. 16Kx16 SRAM CMOS, High Speed Module The EDI816H16C is a 256K bit High Speed, CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless Chip Carriers, mounted on a multilayered ceramic substrate.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS T H M S 16 1620Z-25,-35 ¡DESCRIPTION The T H M S 1 6 1 6 2 0 Z is a 16,384 words by 16 bits static RAM module constr u c t e d on a double sided PC board using four TC55417J 16KX4 static RAMs in SOJ packages. The T H M S 1 6 1 6 2 0 Z is o ffered in a 40 pin 500 mil zip m o dule suitable for

Contextual Info: II II High Performance 16Kx4 CMOS SRAM AS7C188 AS7C186 16Kx4 CMOS SRAM Common I/O FEATURES • O rganization: 16,384 w ords x 4 bits • High Speed: • Com pletely static memory. No clocks or timing strobe required. • Equal access and cycle times •