EEPROM
Abstract: AK6416CM DAS05
Text: ASAHI KASEI [AK6416C] AK6416C 16Kbit シリアル EEPROM 特
長 先進の CMOS EEPROM テクノロジ 電気的書換え可能な不揮発性メモリ 単一電源動作（動作電源電圧：1.8V～5.5V） 16384bit 1024 ワードx16 ビット構成
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AK6416C]
AK6416C
16Kbit
16384bit
EEPROM
AK6416CM
DAS05
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EEPROM
Abstract: AK93C85AM
Text: ASAHI KASEI [AK93C85A] AK93C85A 16384bit シリアル CMOS EEPROM 特 □ □ □ □ □ □ □ □ □ □ □ □ □ 長 先進の CMOS EEPROM テクノロジ 電気的書換え可能な不揮発性メモリ 1.8V～5.5V（READ 動作／WRITE 動作）
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AK93C85A]
AK93C85A
16384bit
16384bit
EEPROM
AK93C85AM
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24LC16
Abstract: AM24LC02 AM24LC04 AM24LC08 AM24LC16 AM24LC16I AM24LC16V
Text: ATC AM24LC16 2-Wire Serial 16K-bits 2048 x 8 CMOS Electrically Erasable PROM General Description Features • State- of- the- Art Architecture - Non-volatile data storage - Full range Vcc = 2.7V to 5.5V • 2 wire I2C serial interface - Provides bi-directional data transfer protocol
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AM24LC16
16K-bits
AM24LC16
16384-bit
24LC16
AM24LC02
AM24LC04
AM24LC08
AM24LC16I
AM24LC16V
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93LC86X
Abstract: 100PF AM93LC86
Text: AM93LC86 16384-bits Serial Electrically Erasable PROM General Description Features • State-of-the-art architecture - Non-volatile data storage - Standard voltage and low voltage operation Vcc: 2.7V ~ 5.5V - Full TTL compatible inputs and outputs - Auto increment read for efficient data dump
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AM93LC86
16384-bits
93LC86X
93LC86X
100PF
AM93LC86
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X25160
Abstract: sck 084 X5163
Text: Recommended System Management Alternative: X5163 X25160 16K 2K x 8 Bit SPI Serial EEPROM With Block Lock Protection DESCRIPTION • 2MHz clock rate • SPI modes 0,0 & 1,1 • 2K X 8 bits —32-byte page mode • Low power CMOS —<1µA standby current
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X5163
X25160
--32-byte
X251ized
X25160
sck 084
X5163
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xc3s500e fg320
Abstract: intel strataflash j3d SPARTAN 3E STARTER BOARD transistor tt 2222 pin configuration 500K variable resistor eeprom programmer schematic winbond AT45DB AT49 jtag cable Schematic XC3S500E spartan 3a
Text: Spartan-3E FPGA Family: Complete Data Sheet R DS312 April 18, 2008 Product Specification Module 1: Introduction and Ordering Information Module 3: DC and Switching Characteristics DS312-1 v3.7 April 18, 2008 DS312-3 (v3.7) April 18, 2008 • • • •
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DS312
DS312-1
DS312-3
DS312-2
XC3S500E
VQG100
DS312-4
xc3s500e fg320
intel strataflash j3d
SPARTAN 3E STARTER BOARD
transistor tt 2222
pin configuration 500K variable resistor
eeprom programmer schematic winbond
AT45DB
AT49 jtag cable Schematic
spartan 3a
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EEPROM
Abstract: AK6416CM DAS05
Text: ASAHI KASEI [AK6416C] AK6416C 16Kbit Serial CMOS EEPROM Features ADVANCED CMOS EEPROM TECHNOLOGY READ/WRITE NON-VOLATILE MEMORY - Wide VCC 1.8V to 5.5V operation - 16384 bits: 1024 16 organization ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip microcomputer’s serial communication port directly
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AK6416C]
AK6416C
16Kbit
1000K
EEPROM
AK6416CM
DAS05
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Untitled
Abstract: No abstract text available
Text: DS1985 16-kbit Add-Only iButtonÒ www.iButton.com SPECIAL FEATURES § § § § § § § § 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground EPROM partitioned into sixty-four 256-bit pages for randomly accessing packetized
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DS1985
16-kbit
256-bit
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programmable storage device
Abstract: No abstract text available
Text: TMS29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE SMJS816B-NOVEMBER1990-REVISED JANUARY 1993 FM PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE'“ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible * Organization . . . 2048 x 8-Bit Flash Memory
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TMS29F816
384-BIT
SMJS816B-NOVEMBER1990-REVISED
29F816-06
1024-Byte
programmable storage device
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Untitled
Abstract: No abstract text available
Text: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter
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SY10/100/101480-6
SY10/100/101480-8
SY10/100/101480-10
6/8/10ns
SY10/100/101480
16384-bit
16384-words-by-1-bit
10K/100K
SY100480
SY101480
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M5M5118P-15
Abstract: M5M5118P 16384-BIT M5M51 si1515 M5M5118
Text: M ITSUBISHI L S Is M5M5118P, -15 16384-BIT 2048-W O R D B Y 8-BIT C M O S STATIC RAM D ESCRIPTION The M5M 5118P series of 2048-word by 8-bit asynchronous PIN C O NFIG URATIO N (TOP V IEW ) silicon gate C M O S static R A M operates on a single 5V power supply and is designed for easy use in applications
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M5M5118P,
16384-BIT
2048-W0RD
M5M5118P
2048-word
24-pin
M5M5118P-15
150ns
15/uA
16384-BIT
M5M51
si1515
M5M5118
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Untitled
Abstract: No abstract text available
Text: SMJ29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE S G M S 0 5 3-N O V E M B E R 1 99 0-R E V IS E D JA N U A R Y 1993 FG PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE™ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible
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SMJ29F816
384-BIT
29F816-06
1024-Byte
32-Byte
18-Pin
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16-Bit-CRC
Abstract: DS1985 DS1985-F3 DS1985-F5 DS9092 DS9093F DS9093RA DS9096P DS9101
Text: DS1985 "I 6K SPECIAL FEATURES • 163 8 4 -b its Electrically Program m able Read Only M em ory EPR O M com m unicates with the econom y of one signal plus ground • EPROM partitioned into s ix ty -fo u r 2 5 6 -b it pages for random ly accessing packetized data records
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DS1985
16384-bits
256-bit
16-Bit-CRC
DS1985
DS1985-F3
DS1985-F5
DS9092
DS9093F
DS9093RA
DS9096P
DS9101
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Untitled
Abstract: No abstract text available
Text: FUJITSU M I CR OELE CT RO NI CS 23E D F U JIT S U 374T7fa2 0QQÖ3S5 S M B M 1 0 0 4 8 4 A -8 —r - » / / / T ^ h ? " 2 .3 > - 0 8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit E C L read/write random
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374T7fa2
16384-BIT
00484A
28-PAD
LCC-28C-F02)
C28010S-1C
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Untitled
Abstract: No abstract text available
Text: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage
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16384-BIT
MBM10484AAugust
16384-BIT
0484A
28-PAD
LCC-28C-F02)
24PLCS)
02ITYP
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DS2505
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS2505 16K bit A dd-O nly Memory PIN ASSIGNMENT FEATURES • 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground TO -92 TSOC PACKAGE • Unique, factory-lasered and tested 64-bit registra
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DS2505
64-bit
256-bit
DS2505
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Untitled
Abstract: No abstract text available
Text: FU JITSU CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY M B 8K 69A -25 MB81C69A-30 MB81C69A-35 J a n u a ry 1 9 8 8 E d itio n 2 .0 4 K x 4 16,384-BIT STATIC RANDOM ACCESS MEMORY WITH SUPPER HIGH SPEED The Fujitsu MB 81C 69A is 4096 words x 4 bits static random access m em ory
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16384-BIT
MB81C69A-30
MB81C69A-35
384-BIT)
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374m2 ECK16384-BIT»*W BIPOLAR RANDOM' G0Gfl27S 7 ■ MBM100480A-8 May 1988 Edition 1.0 " P 4 k -2 .V O S 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM100480A Is a fully decoded 16384-blt ECL read/w rite random access
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374m2
ECK16384-BITÂ
G0Gfl27S
MBM100480A-8
16384-BIT
MBM100480A
16384-blt
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Untitled
Abstract: No abstract text available
Text: 14E D INTEGRA TED DEVICE • MflSS7?l □GQ3330 1 B - HIGH-SPEED STATIC RAM Cache TAG 16K 4K x 4-BIT ¡jjjjdt) Integrated DeviceTèchnoîogy. Inc ADVANCE INFORMATION IDT 7177 - T - H 6 '2 3 ~ 3 l FEATURES: DESCRIPTION: • High-speed address to Match com parison time
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GQ3330
IDT7177S
300mW
MIL-STD-883,
1889Integraied
DSC-1061/-
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Untitled
Abstract: No abstract text available
Text: F U J IT S U ECL 16384-BIT B IPO LA R R A N D O M ACCESS MEM ORY MBM10480A-8 May 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A Is a fully decoded 16384-blt ECL read/write random access memory designed for main m emory, control and buffer storage applications. This device
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16384-BIT
MBM10480A-8
MBM10480A
16384-blt
M8M10480A
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Untitled
Abstract: No abstract text available
Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MBM10486RL-13 16384-BIT BIPOLAR SELF-TIMED RAMDOM ACCESS MEMORY DESCRIPTION The Fujitsu M B M 1 0 4 8 6 R L -1 3 is fully decoded 1 6 3 64 -b it ECL s elf-lim ed read/write random access memory S T R A M . The device is organized as 4 09 6 words by 4 bits, and itfeatures
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MBM10486RL-13
16384-BIT
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Untitled
Abstract: No abstract text available
Text: FU JITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY M BM 10484A-10 A ugust 1988 E d itio n 2 .0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM O RY T he F u jits u M B M 1 0 4 8 4 A is f u lly decoded 1 6 3 8 4 -b it E C L re a d /w rite random access m e m o ry designed f o r high-speed scratch pad, c o n tro l and b u ffe r storage
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16384-BIT
0484A-10
MBM10484A-10
D01jT4
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Untitled
Abstract: No abstract text available
Text: INTEGRATED DEVICE IME D jy • 4Ö2S771 0GG331S 2 ■ HIGH-SPEED STATIC RAM Cache TAG 16K 4K x 4-BIT Integrated DeviceTechnology, Inc FEATURES: . DESCRIPTION: . ADVANCE INFORMATION IDT 6177 I ' ' lf 6 -Z 3 - 3 1 The IDT6177 Is a high-speed cache address comparator sub
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2S771
0GG331S
IDT6177S
300mW
MIL-STD-883,
IDT6177
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Untitled
Abstract: No abstract text available
Text: „.x SYNERGY „ n SY100484-3.5/4 SY101484-3.5/4 SY100484-5/6 S Y101484-5/6 a iiji SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ.
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SY100484-3
SY101484-3
SY100484-5/6
Y101484-5/6
500ps
-350mA
SY100/101484
16384-bit
SY100/101484
F28-1
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