16384BIT Search Results

EEPROM

Abstract: AK6416CM DAS05
Contextual Info: ASAHI KASEI [AK6416C] AK6416C 16Kbit シリアル EEPROM 特 … … … … … … … 長 先進の CMOS EEPROM テクノロジ 電気的書換え可能な不揮発性メモリ 単一電源動作（動作電源電圧：1.8V～5.5V） 16384bit 1024 ワードx16 ビット構成

EEPROM

Abstract: AK93C85AM
Contextual Info: ASAHI KASEI [AK93C85A] AK93C85A 16384bit シリアル CMOS EEPROM 特 □ □ □ □ □ □ □ □ □ □ □ □ □ 長 先進の CMOS EEPROM テクノロジ 電気的書換え可能な不揮発性メモリ 1.8V～5.5V（READ 動作／WRITE 動作）

programmable storage device

Contextual Info: TMS29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE SMJS816B-NOVEMBER1990-REVISED JANUARY 1993 FM PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE'“ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible * Organization . . . 2048 x 8-Bit Flash Memory

24LC16

Abstract: AM24LC02 AM24LC04 AM24LC08 AM24LC16 AM24LC16I AM24LC16V
Contextual Info: ATC AM24LC16 2-Wire Serial 16K-bits 2048 x 8 CMOS Electrically Erasable PROM General Description Features • State- of- the- Art Architecture - Non-volatile data storage - Full range Vcc = 2.7V to 5.5V • 2 wire I2C serial interface - Provides bi-directional data transfer protocol

93LC86X

Abstract: 100PF AM93LC86
Contextual Info: AM93LC86 16384-bits Serial Electrically Erasable PROM General Description Features • State-of-the-art architecture - Non-volatile data storage - Standard voltage and low voltage operation Vcc: 2.7V ~ 5.5V - Full TTL compatible inputs and outputs - Auto increment read for efficient data dump

X25160

Abstract: sck 084 X5163
Contextual Info: Recommended System Management Alternative: X5163 X25160 16K 2K x 8 Bit SPI Serial EEPROM With Block Lock Protection DESCRIPTION • 2MHz clock rate • SPI modes 0,0 & 1,1 • 2K X 8 bits —32-byte page mode • Low power CMOS —<1µA standby current

Contextual Info: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter

M5M5118P-15

Abstract: M5M5118P 16384-BIT M5M51 si1515 M5M5118
Contextual Info: M ITSUBISHI L S Is M5M5118P, -15 16384-BIT 2048-W O R D B Y 8-BIT C M O S STATIC RAM D ESCRIPTION The M5M 5118P series of 2048-word by 8-bit asynchronous PIN C O NFIG URATIO N (TOP V IEW ) silicon gate C M O S static R A M operates on a single 5V power supply and is designed for easy use in applications

Contextual Info: SMJ29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE S G M S 0 5 3-N O V E M B E R 1 99 0-R E V IS E D JA N U A R Y 1993 FG PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE™ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible

16-Bit-CRC

Abstract: DS1985 DS1985-F3 DS1985-F5 DS9092 DS9093F DS9093RA DS9096P DS9101
Contextual Info: DS1985 "I 6K SPECIAL FEATURES • 163 8 4 -b its Electrically Program m able Read Only M em ory EPR O M com m unicates with the econom y of one signal plus ground • EPROM partitioned into s ix ty -fo u r 2 5 6 -b it pages for random ly accessing packetized data records

Contextual Info: FUJITSU M I CR OELE CT RO NI CS 23E D F U JIT S U 374T7fa2 0QQÖ3S5 S M B M 1 0 0 4 8 4 A -8 —r - » / / / T ^ h ? " 2 .3 > - 0 8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit E C L read/write random

Contextual Info: FUJITSU M I CRO EL EC TR ON IC S FU JITSU 23E D • 3?417fa2 OODÄHSS T BIPOCAR RANDOM* ACCESS M EM O R Y MBM10480A-10 -OS May 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A Is a fuSy decoded 16384-blt ECL read/w rite random access

Contextual Info: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage

DS2505

Contextual Info: DALLAS SEMICONDUCTOR DS2505 16K bit A dd-O nly Memory PIN ASSIGNMENT FEATURES • 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground TO -92 TSOC PACKAGE • Unique, factory-lasered and tested 64-bit registra­

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374m2 ECK16384-BIT»*W BIPOLAR RANDOM' G0Gfl27S 7 ■ MBM100480A-8 May 1988 Edition 1.0 " P 4 k -2 .V O S 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM100480A Is a fully decoded 16384-blt ECL read/w rite random access

xc3s500e fg320

Abstract: intel strataflash j3d SPARTAN 3E STARTER BOARD transistor tt 2222 pin configuration 500K variable resistor eeprom programmer schematic winbond AT45DB AT49 jtag cable Schematic XC3S500E spartan 3a
Contextual Info: Spartan-3E FPGA Family: Complete Data Sheet R DS312 April 18, 2008 Product Specification Module 1: Introduction and Ordering Information Module 3: DC and Switching Characteristics DS312-1 v3.7 April 18, 2008 DS312-3 (v3.7) April 18, 2008 • • • •

Contextual Info: 14E D INTEGRA TED DEVICE • MflSS7?l □GQ3330 1 B - HIGH-SPEED STATIC RAM Cache TAG 16K 4K x 4-BIT ¡jjjjdt) Integrated DeviceTèchnoîogy. Inc ADVANCE INFORMATION IDT 7177 - T - H 6 '2 3 ~ 3 l FEATURES: DESCRIPTION: • High-speed address to Match com parison time

Contextual Info: F U J IT S U ECL 16384-BIT B IPO LA R R A N D O M ACCESS MEM ORY MBM10480A-8 May 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A Is a fully decoded 16384-blt ECL read/write random access memory designed for main m emory, control and buffer storage applications. This device

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MBM10486RL-13 16384-BIT BIPOLAR SELF-TIMED RAMDOM ACCESS MEMORY DESCRIPTION The Fujitsu M B M 1 0 4 8 6 R L -1 3 is fully decoded 1 6 3 64 -b it ECL s elf-lim ed read/write random access memory S T R A M . The device is organized as 4 09 6 words by 4 bits, and itfeatures

EEPROM

Abstract: AK6416CM DAS05
Contextual Info: ASAHI KASEI [AK6416C] AK6416C 16Kbit Serial CMOS EEPROM Features  ADVANCED CMOS EEPROM TECHNOLOGY  READ/WRITE NON-VOLATILE MEMORY - Wide VCC 1.8V to 5.5V operation - 16384 bits: 1024  16 organization  ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip microcomputer’s serial communication port directly

Contextual Info: FU JITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY M BM 10484A-10 A ugust 1988 E d itio n 2 .0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM O RY T he F u jits u M B M 1 0 4 8 4 A is f u lly decoded 1 6 3 8 4 -b it E C L re a d /w rite random access m e m o ry designed f o r high-speed scratch pad, c o n tro l and b u ffe r storage

Contextual Info: INTEGRATED DEVICE IME D jy • 4Ö2S771 0GG331S 2 ■ HIGH-SPEED STATIC RAM Cache TAG 16K 4K x 4-BIT Integrated DeviceTechnology, Inc FEATURES: . DESCRIPTION: . ADVANCE INFORMATION IDT 6177 I ' ' lf 6 -Z 3 - 3 1 The IDT6177 Is a high-speed cache address comparator sub­

Contextual Info: DS1985 16-kbit Add-Only iButtonÒ www.iButton.com SPECIAL FEATURES § § § § § § § § 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground EPROM partitioned into sixty-four 256-bit pages for randomly accessing packetized

Contextual Info: „.x SYNERGY „ n SY100484-3.5/4 SY101484-3.5/4 SY100484-5/6 S Y101484-5/6 a iiji SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ.