162MH Search Results

ra33h1516m1

Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

Contextual Info: AURORA, IL 60505 PHONE 6 3 0 8 5 1 -4 7 2 2 FAX (63 0) 8 5 1 -5 0 4 0 www.conwin.com CRYSTAL CONTROLLED OSCILLATORS CONNOR W IN F IE L D ran SURFACE MOUNT 3.3V PECL EE94—51* SPECIFICATIONS Frequency Range E E 94-52* 13MHz to 162MHz 13MHz to 200MHz ±25ppm

Contextual Info: CRYSTAL CONTROLLED OSCILLATORS CONNOR W IN F IE L D AURORA, IL 60505 PHONE 630 851-4722 FAX (630) 851-5040 www.conwin.com SURFACE MOUNT 3.3V PECL EE94-51* SPECIFICATIONS E E 94-52* 13MHz to 162MHz Frequency Range 13MHz to 200MHz ±25ppm Frequency Stability

Contextual Info: • 0Ü17SDS fiTT ■ MITSUBISHI RF POWER MODULE M68739 * » * !,» #» ■ s re ' 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : P in : RF INPUT @VGG : G ATE BIAS SUPPLY @ VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT

S-AV10L

Abstract: S-AV7
Contextual Info: - 324 - Í4 £ «TXL EJ £ [m in ] ÎK'J /t 5R 1t I S - A V 6 h 7 y -Sx ? , 2 x T - ->'o VHF 154 — 162MHz % : r ^ iíljí^ o ä 25W FM 16. 0 V c o n (V) 16. 0 Po(W) 300. 0 PG(dß) Te (min) (°C)* -30. 0 V t (%) Tc(tnax) (°C)* 100.0 À ^ I V S W R i^ jîd j^ o

R1240

Abstract: 2258 n LBN16202 filter 162MHz 2258 saw-filter 864
Contextual Info: 162MHz SAW Filter 24MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN16202 www.sipatsaw.com Features — For IF SAW filter — Single-ended operation — Ceramic Surface Mount Package — Small size

Contextual Info: MITSUBISHI RF POWER MODULE M68739R 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING D im ensions in m m PIN : Po : RF O U TP U T ©VDD : DRAIN BIAS SUPPLY VGG : G ATE BIAS SU PPLY © P in : RF IN PU T © G N D : FIN H47 ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted

ra33h1516m1

Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

Contextual Info: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the

312 smd code

Abstract: CCPD-024
Contextual Info: CCPD-024 5x7mm SMD LVPECL Clock Oscillator 2.5 Volts Model CCPD-024 is a 162MHz to 312.500MHz LVPECL Clock Oscillator operating at 2.5Volts. The oscillator utilizes a High Q Third Overtone crystal design providing very low Jitter and Phase Noise. No Sub-Harmonics are present in

RA33H1516M1

Abstract: RA33H1516M1-101 VDD1015
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

RA35H1516M

Abstract: RA35H1516M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to

TB218

Contextual Info: TB218 Freq:30-162Mhz, Vds=7.2Vdc, Idq=800mA TB218 Gain/Efficiency vs Frequency: Vds=7.2Vdc, Idq=800mA 50 50 45 45 40 40 35 35 Efficiency 30 Pout fixed at 3W Gain 25 25 20 20 15 15 10 10 5 5 20 30 40 50 60 70 80 90 100 110 Frequency MHz 120 130 140 150 160

TA 8515 F

Contextual Info: CRYSTAL CONTROLLED OSCILLATORS SURFACE MOUNT 3.3V PECL CONNOR WINFIELD AURORA, IL 60505 PHONE 630 851 -4 7 2 2 FAX (630) 851-5 0 4 0 EE94-51* SPECIFICATIONS EE94-52* 13MHz to 162MHz Frequency Range Frequency S tability ±50ppm D n + m .t D u ty 13MHz to 162MHz

25X1

Abstract: M68739R
Contextual Info: MITSUBISHI RF POWER MODULE M68739R 154-162MHz, 9.6V, 7W FM PORTABLE RADIO OUTLINE DRAWING D im en sion s in mm PIN : P0 VD D ®VGG © P in ©GND : : : : : RF OUTPUT DRAIN BIAS SUPPLY GATE BIAS SUPPLY RF INPUT FIN H47 ABSOLUTE MAXIMUM RATINGS T c = 2 5 ‘C unless otherw ise noted

Contextual Info: ^ - 0 G1 7 5 5 2 ^73 • MITSUBISHI RFPOWER MODULE M57785M 150-162MHz, 7.2V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM © PIN : © P in RF INPU T ®VCC1 1st. DC SUPPLY ®VB B BASE BIAS SUPPLY ® VC C 2

RF power amplifier 10mW

Abstract: RA33H1516M1 473 marking code transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

Contextual Info: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the

amp circuit diagrams 400w

Contextual Info: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the

power mosfet

Abstract: LMP1603 all mosfet vhf power amplifier
Contextual Info: LMP1603 VHF SILICON MOSFET POWER AMPLIFIER MODULE 5.5W , 7.2V 150MHz — 162MHz FEATURES • HIGH OUTPUT POWER 5.5W min. • HIGH EFFICIENCY (> 38%) • LOW INTERMODULATION DISTORTION (< -25dBc) • OPERATION FROM 7.2V SUPPLY • INTEGRAL ENABLE / DISABLE CONTROL

Contextual Info: IP00C502 IP00C502 Specifications LIVE IMAGE FORMAT CAPTURE FUNCTION RGB/YUV 4:4:4 36-bit @ 162MHz YUV4:2:2 24-bit @ 162 MHz Able to capture live image to SDRAM in RGB565 format and then transfer the captured data to serial flash LIVE IMAGE SIZE Horizontal sync signal interval: up to 4096 pixels

RA33H1516M1

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

RA35H1516M

Abstract: RA35H1516M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to

RF MOSFET MODULE

Abstract: RA35H1516M RA35H1516M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to