16160A Search Results

X633

Abstract: MTG-16160A LCM 5v 182 EL DRIVER X033H
Contextual Info: MTG-16160A GENERAL SPECIFICATION Item INTERFACE PIN ASSIGNMENT Content Pin No. Pin Out Function Description Number of Character 160x160 Module Size 69.0 W x70.5(H)x6.2(D)mm Max Viewing Area 63.4(W)x63.3(H)mm Dot Size/Dot Pitch 0.33(W)x0.33(H)mm/0.35(W)x0.35(H)mm

Contextual Info: IS43R83200A -6,-75 16160A -6,-75 ISSI 4-bank x 8,388,608 - word x 8-bit (4-bank x 4,194,304 - word x 16-bit) 256 Mb DDR Synchronous DRAM May 2005 DESCRIPTION IS43R83200A is a 4-bank x 8,388,608-word x 8bit, 16160A is a 4-bank x 4,194,304-word x 16bit double

Contextual Info: 16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi 16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance

SEM t11

Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Contextual Info: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command

Contextual Info: IS42D46400A -5,-6,-75 4-bank x 16,777,216 - word x 4-bit IS42D83200A -5,-6,-75 (4-bank x 8,388,608 - word x 8-bit) 16160A -5,-6,-75 (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb DDR Synchronous DRAM January 2005 DESCRIPTION IS42D46400A is a 4-bank x 16,777,216-word x 4-bit,

TSOP 54 PIN

Contextual Info: IS42S83200A 4-bank x 8,388,608 - word x 8-bit 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM January 2005 DESCRIPTION IS42S83200A is a synchronous 128Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and 16160A is organized as 4-bank x 4,194,304-word x

IS42S16160A

Abstract: 42S83200A IS42S83200A IS42S16160A-7TL
Contextual Info: IS42S83200A 4-bank x 8,388,608 - word x 8-bit 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM November 2005 DESCRIPTION IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and 16160A is organized as 4-bank x 4,194,304-word x

4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Contextual Info: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL

TC5118160

Abstract: c51v tc5118180
Contextual Info: X6 Capacity Type No. Max. Access Time ns Min. Cyde Power Organization Time(ns) Supply (V) Max. Powat Dis»ip»tk>n(rciW) Active *T C 5 1 16800ANJ/ANT-60 60 15 30 110 523 *T C 5 1 16800ANJ/ANT-70 70 20 35 130 440 *TC5117800ANJ/ANT-60 60 15 30 110 743 2097152

D010

Abstract: D016 MSM51V18160 MSM51V18160A msm5116160a msm5118160a msm51v16160a
Contextual Info: O K I Sem iconductor MSM5 1 V18160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V 18160A is a 1,048,576-w ord x 16-bit D y n a m ic R A M fab ricated in O K I's C M O S silicon g a te tech n ology. T he M SM 51V 18160A ach ieve h igh in tegration, h ig h -sp e e d o p eratio n , an d low -pow er

IS42S16160A

Abstract: IS42S83200A
Contextual Info: IS42S83200A 4-bank x 8,388,608 - word x 8-bit 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM November 2005 DESCRIPTION IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and 16160A is organized as 4-bank x 4,194,304-word x

Contextual Info: H M 5 1 W 1 6 1 6 0 A Preliminary S e r i e s 1 ,0 4 3 ,576-w ord x 16-bit D ynam ic R and o m A c c e ss M e m o ry HITACHI • Single 3.3 V + 0.3 V • High speed - Access time 60 ns/ 70 ns/ 80 ns (max) • Low power dissipation - Active mode 360 m\V/324 m\V/2S8 mW (max)

Contextual Info: IS42S83200A 4-bank x 8,388,608 - word x 8-bit 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM November 2005 DESCRIPTION IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and 16160A is organized as 4-bank x 4,194,304-word x

Contextual Info: IS42S46400A 4-bank x 16,777,216 - word x 4-bit IS42S83200A (4-bank x 8,388,608 - word x 8-bit) 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM AUGUST 2004 DESCRIPTION IS42S46400A is organized as 4-bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and

GM7IC

Contextual Info: @ LG Semicon. Co. LTD. Description Features The 16160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. 16160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

DC-37PTI

Abstract: ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500
Contextual Info: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.

5-176-3 terminal block

Abstract: mini circuits 15542 MS14141 DIN 18541 8-32X3 s31512 mini 15542 P-306-CCE 5-140-Y E61245
Contextual Info: COMMERCIAL Barrier Blocks Circular Mini DIN BNC Jones Plugs Edge Connectors Commercial [.050” 1.27mm Density Solder Introduction Cup/Wire D-Microminiature] Cinch Commercial Products, consisting of Jones Plugs and Sockets, Barrier Blocks, Edge Cards, Two-Piece Commercial Dins,

Contextual Info: DURA-CON Barrier Block High Reliability Accessories All-Plastic Fanning Fanning Strips Strips Catalog Numbers and Dimensions for Fanning Strips for 140 Series Terminal Blocks, Continued Right-Angle Type Dimensions 2 Catalog No. 6-160A-R Ordering Information

LINDNER fuses

Abstract: NFC 63210 lindner fuse lindner nh fuse LINDNER gG fuses LINDNER nh ferraz nh Ferraz Shawmut fuse nh FERRAZ FUSELINK lindner
Contextual Info: EURO/IEC Fuses & Accessories gG, aM NH DIMENSION KNIFE-BLADE FUSE-LINKS nh dimension knife-blade fuse-links, fuse bases, and accessories Ferraz Shawmut NH Fuse-links, sizes 000, 00, 0, 1, 2, 3, 4 and 4a are rated 500 or 690 Volts AC with breaking capacities of 80kA or 120kA. All fuse-links include an

IC60N

Abstract: IC60N C CURVE A9A26948 A9C30811 NG125L vigi C60 C60H VIGI IC60N c 6a TM 18311 DB4050
Contextual Info: Applications Guide 1 Acti 9 Protection for specialised applications Acti 9 is Schneider Electric’s new core modular system In addition, we offer back-up tables providing quick, that makes your power distribution installation safer, at-a-glance overview of everything you need to know

DIN 41529

Abstract: bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb
Contextual Info: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.

Contextual Info: IS42S46400A 4-bank x 16,777,216 - word x 4-bit IS42S83200A (4-bank x 8,388,608 - word x 8-bit) 16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM AUGUST 2004 DESCRIPTION IS42S46400A is organized as 4-bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and

GM76C256all

Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60

BACC63CB

Abstract: bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft
Contextual Info: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.