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    160V 30A TRANSISTOR Search Results

    160V 30A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    160V 30A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF250

    Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		PDF 90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] an52-7105 IRF250 irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247

    Untitled

    Abstract: No abstract text available
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		PDF 90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] p252-7105

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    Untitled

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF BUX10 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF BUX10 O-204AA)

    SML2005SMD1

    Abstract: LE17 8749
    Text: N-CHANNEL POWER MOSFET SML2005SMD1 • Low RDS on MOSFET Transistor. • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Supply, Motor Controls and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF SML2005SMD1 O-276AB) SML2005SMD1 LE17 8749

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET SML2005SMD1 • Low RDS on MOSFET Transistor. • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Supply, Motor Controls and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF SML2005SMD1 O-276AB)

    Untitled

    Abstract: No abstract text available
    Text: PGäOEXyKgTT @ A ¥ Ä [ L Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available


    OCR Scan     		PDF 203mm) 20MHz 20MHz 500pF

    2N5330

    Abstract: 2N6338 2N6341 SDT44331 SDT44335 1030A
    Text: lo n tra ti ÄTTÄH < MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc. N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CHIP NUM BER dT\ CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


    OCR Scan     		PDF 203mm) 2N5330 2N6338 2N6341 SDT44331 SDT44335 1030A

    transistor 2n5330

    Abstract: transistor c63 NPN Transistor VCEO 80V 100V
    Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)


    OCR Scan     		PDF 203mm) 40MHz 40MHz 300pF transistor 2n5330 transistor c63 NPN Transistor VCEO 80V 100V

    c106 TRANSISTOR

    Abstract: 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106
    Text: -Jfclitron 1?1M [d 1ü) T ©ÄTTÄIL® Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)


    OCR Scan     		PDF 305mm) c106 TRANSISTOR 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106

    C106V

    Abstract: c106 TRANSISTOR c08c C08-C
    Text: -Jfolitron Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:


    OCR Scan     		PDF 305mm) SDT6436 SDT6438 C-106 C106V c106 TRANSISTOR c08c C08-C

    Untitled

    Abstract: No abstract text available
    Text: 8368602 S OL I TRON DEVICES I NC TS 95D 02887 D D E | û 3 b û t , D 2 GODSfifl? S T ~ MT^iL© _ "_ Z - Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION


    OCR Scan     		PDF 203mm) 2N4398, 2N4399, 2N5853, 2N5883, 2N5884, 2N6437, 2N6438

    120v 10a transistor

    Abstract: 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor
    Text: ^atitran [?[M>[B y Tr © ä ? ä il Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 4i45mm 203mm) 2N4398, 2N4399, 2N5853, 2N5883, 2N5884. 2N6437, 2N6438 120v 10a transistor 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor

    74c74

    Abstract: No abstract text available
    Text: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) 74c74

    c107 TRANSISTOR equivalent

    Abstract: transistor c107 m TRANSISTOR C107 c106 TRANSISTOR c107 TRANSISTOR
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC TS 95D 02 8 9 7 DeT| a3t,abOH □□□Eflcì7 fi D 3 3 - ^ 3 f~ Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		PDF 305mm) C-106 C-107 c107 TRANSISTOR equivalent transistor c107 m TRANSISTOR C107 c106 TRANSISTOR c107 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: ^Ælltran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) 20MHz 20MHz 900pF

    Untitled

    Abstract: No abstract text available
    Text: 'SOLITRON DEVICES INC äh de^ I fl3L.ab02 O D o a s ö T a | _ 7 " ' 3 3 - / 7 ELEMENT NUMBER 268 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PNP EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000A Aluminum FORMERLY 68 Collector: Polished Silicon


    OCR Scan     		PDF 36nim 20MHz 20MHz 900pF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 4SE » • ^0^7250 □ GlV'ìTfl 1 ■ T 0 S 4 TOSHIBA FIELD EFFECT TRANSISTOR_ Y T F P 9*59 SILICON N CHANNEL MOS TYPE (ir - YTFPZoZ MOSI) INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF 100nA -250u 00A/us

    transistor c101

    Abstract: c18v 2N6061 2N6382 2N5678 2N6377 SDT3604 SDT3901 SDT3904 c101 TRANSISTOR
    Text: ^Ælltran MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 305mm) C-101 transistor c101 c18v 2N6061 2N6382 2N5678 2N6377 SDT3604 SDT3901 SDT3904 c101 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC TS 95D 02891 d ÊT| 03bflbDS D T~~ S S ~ 7 -ÆMron Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


    OCR Scan     		PDF 03bflbDS 305mm) 2N6061, 2N6377, SDT3601 SDT3604, SDT3901 SDT3904, 2N5678, 2N6382

    160V 30A TRANSISTOR

    Abstract: power transistor 200V, 30A
    Text: TOSHIBA { D I S C R E T E / O P T O 9097250 ¿Toshiba T O S H IB A TT < D IS C R E T E / O P T O > DE | l C H 7 a S D D01bflD4 7 |~~ 99D 16804 D T -3 q -\3 TOSHIBA FIE LD EFFECT TRANSISTOR YT F 2 5 0 SIL IC O N N CHANNEL MOS TYPE ff-M OS I SEMICONDUCTOR


    OCR Scan     		PDF D01bflD4 250uA 250uA 00A/us 160V 30A TRANSISTOR power transistor 200V, 30A

    2SD2449

    Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
    Text: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129


    OCR Scan     		PDF 2SC982TM 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB677 2SD687 2SB907 2SD1222 2SD2449 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799

    Untitled

    Abstract: No abstract text available
    Text: -Jfoutran P l M i M ? © Â ? M ,© ( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 68 CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" a lso available)


    OCR Scan     		PDF 305mm) SDT3901 SDT3904, 2N5678, 2N6382 C-100 C-101