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    160MA Search Results

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    160MA Price and Stock

    Eaton Bussmann GDB-160MA

    FUSE GLASS 160MA 250VAC 5X20MM
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    Onlinecomponents.com GDB-160MA 89
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    Eaton Bussmann GDA-160MA

    FUSE CERAMIC 160MA 250VAC 5X20MM
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    Eaton Bussmann GDC-160MA

    FUSE GLASS 160MA 250VAC 5X20MM
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    Eaton Bussmann BK-GDB-160MA

    FUSE GLASS 160MA 250VAC 5X20MM
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    Eaton Bussmann BK-GDC-160MA

    FUSE GLASS 160MA 250VAC 5X20MM
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    160MA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UM61M512K-15

    Abstract: UM61M512K15 UM61M512 um61M512K UM61M512-20 um61m UM61M51
    Text: UM61M512 Seríes 64KX 8, 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply * Access times: 15/20 ns max. ■ Current: Operating: 160mA (max.) Standby. 10mA (max.) ■ Full static operation, no clock or refreshing required ■ 3.3V I/O com patible


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    UM61M512 160mA 32-pin 288bit UM61M512K-15 UM61M512K-20 UM61M512K15 um61M512K UM61M512-20 um61m UM61M51 PDF

    Untitled

    Abstract: No abstract text available
    Text: AC Adapter 12VDC/800mA 412-112084 DIMENSIONS: in. except where noted 1.73 1.93 2.56 5.5mm 2.1mm .470 SPECIFICATIONS • Primary voltage: 120VAC 60Hz 19W • Exciting current, open circuit: 160mA max. • DC resistance ± 15%: 27Ω • Secondary, no load voltage: 17.7VDC


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    12VDC/800mA 120VAC 160mA 12VDC 800mA 500VDC 500VAC PDF

    17VDC

    Abstract: XC-600026
    Text: AC Adapter 12VDC/200mA 412-112022 41.91 1.65 Dimensions: mm (in.) 43.18 (1.70) 58.42 (2.30) 2.5 (.098) 13.97 (.55) Electrical Specifications: • Primary voltage: 120VAC 60Hz • Exciting current, open Circuit: 160mA max. • DC resistance: ±15%, 57Ω • Secondary, no load voltage: 17VDC


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    12VDC/200mA 120VAC 160mA 17VDC 12VDC 200mA 500VDC 500VAC 17VDC XC-600026 PDF

    PVD10

    Abstract: PVD1052 PVD1054 PVD13N
    Text: Replaced by PVD13N Data Sheet No. PD10023E Series PVD10 Microelectronic Power IC BOSFET Photovoltaic Relay Single-Pole, 160mA, 0-100V DC General Description The Photovoltaic DC Relay PVD is a single-pole, normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a


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    PVD13N PD10023E PVD10 160mA, PVD10 PVD1052 PVD1054 PVD13N PDF

    AP01L60AT

    Abstract: RoHS-compliant Product Advanced MOSFET BVDSS 01L60
    Text: AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to


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    AP01L60AT 160mA 01L60AT AP01L60AT RoHS-compliant Product Advanced MOSFET BVDSS 01L60 PDF

    KM681002

    Abstract: No abstract text available
    Text: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)


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    KM681002 KM681002-15: 170mA KM681002 160mA 150mA KM681002J 32-SOJ-400 PDF

    cerdip 300mil

    Abstract: plji 74F30240 74F30244 N74F30240F N74F30240N N74F30244F N74F30244N F3024
    Text: HILIPS i n t e r n a t i o n a l Philips Samiconductors-SigneHcs Document No. 853-1157 ECN No. 97652 Date of issue September 15,1989 Status Product Specification FAST Products FEATURES • Ideal for driving transmission lines or backplanes. 160mA lQL Ideal for applications with imped­


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    160mA F30240 F30244 160mA 7110fl2b 00S2747 74F30240. 74F30244 500ns cerdip 300mil plji 74F30240 74F30244 N74F30240F N74F30240N N74F30244F N74F30244N F3024 PDF

    5RT-040H

    Abstract: 5RT-0500H 5RT-025H 5RT-032H 5RT-010H 5RT-0630H 5RT-0800H 5RT-020H FUSE T 3.15A H 250V 5RT-0100H
    Text: m^ c t o 5RT , RoHS & Pb-free RADIAL LEAD MICRO FUSE TIME-LAG Unit: mm DIMENSIONS: Short 5,05*0.1 TAPING SPECIFICATIONS: mv MAX CATALOG AMPERE VOLTAGE NO. RATING DROP 5RT-0100H 100mA 350 5RT-0125H 125mA 300 5RT-0160H 160mA 280 5RT-0200H 200mA 260 5RT-0250H 250mA


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    5RT-0100H 100mA 5RT-0125H 125mA 5RT-0160H 160mA 5RT-0200H 200mA 5RT-0250H 250mA 5RT-040H 5RT-0500H 5RT-025H 5RT-032H 5RT-010H 5RT-0630H 5RT-0800H 5RT-020H FUSE T 3.15A H 250V PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)


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    KM64B261A 160mA 28-SOJ-3QO KM64B261A 144-bit 200mV PDF

    GP160SCKT

    Abstract: IEC61951-1 ZRS1042REV03
    Text: Data Sheet Model No.: GP160SCKT Type : High Temperature Rechargeable Nickel Cadmium Cylindrical Cell Nominal Dimension with Sleeve : ∅ = 23.0 mm H = 43.0 mm : Recommended discharge current 160mA to 1600mA Application 1.4 1.2 Nominal Capacity Charging Condition


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    GP160SCKT 160mA 1600mA 1600mAh 320mA IEC61951-1 IEC61951-1 16hrs GP160SCKT ZRS1042REV03 PDF

    mj15030

    Abstract: VB027BSP MJ-15030
    Text: VB027BSP  HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB027BSP Vcl 320V Icl 10.5A Id on 160mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET • LOGIC LEVEL COMPATIBLE INPUT ■ DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT


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    VB027BSP 160mA VB027BSP PowerSO-10TM mj15030 MJ-15030 PDF

    Transformer ei35

    Abstract: BP5086A20S NH3 fuse
    Text: BP5086A20S AC/DC converter AC100V input, output-1:4V/1mAoutput-2:20V/160mA ●Dimension(Unit:mm) Limits Unit Vi Topr Tstg Tcmax Vsurge IoMAX 190 −20 ~ +80 −20 ∼ +105 105 2 160 V ℃ ℃ ℃ kV mApk 10.1MAX. 30.5MAX. Mark Side Symbol 17.9MAX.


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    BP5086A20S AC100V output-14V/1mAoutput-220V/160mA 25MAX 80134VAC) Transformer ei35 BP5086A20S NH3 fuse PDF

    smd marking YK

    Abstract: 011V
    Text: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : B 6 .3 D ± 0 .3 0 i 3. E l e c t r i c a l S p e c i f i c a t i o n s : OCL: 1000uhl±20% @10KHz 0.11V, 160mA DCR: 4 .9 O hm s ± 4 0 % SRF: 1.7MHz Min Notes:. M arking on to p view 2 .0 0


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    1000uhl 10KHz 160mA MIL-STD-202, UL94-V-0 E15155B 102mm] XFWIC575047SH-102M smd marking YK 011V PDF

    US015

    Abstract: SOT-963 MOSFET NOTEBOOK us-015
    Text: News Release Released – April 14, 2009 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 Contact: Tom Donofrio Email: tdonofrio@centralsemi.com www.centralsemi.com For Immediate Release Space Saving Dual, 20V, 160mA N-Channel MOSFET


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    160mA CMRDM3590 OT-963 160mA 100mA OT-963 OT-563 US015 SOT-963 MOSFET NOTEBOOK us-015 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64V1003A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns(Max ) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12: 160mA(Max.)


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    KM64V1003A KM64V1003A-12: 160mA KM64V1003A-15 KM64V1003A-17 KM64V1003A-20 KM64V1003AJ 32-SOJ-400 KM64V1003AT: 32-TSOP2-4QOF PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002-15:170mA (Max.) KM681002 -17: 160mA (Max.)


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    KM681002 KM681002-15 170mA KM681002 160mA KM681002-20: 150mA KM681002J 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: TEKTRONI X/ TRI ÖUINT 2SE D fliObSl 00GQ1G3 5 Product Summary_ O m Custom Foundry Products and Services GaAs Process Parameter 1D&1A HA QED QED/A D-Mode D Mode IDSSE -1.5V n/a 150mA n/a -1.6V n/a 160mA n/a D Mode EMode -0.60V 0.15V 60mA 40mA


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    00GQ1G3 150mA 160mA 230mA 15GHz 21GHz 380x380 14-0503-C PDF

    CMRDM3575

    Abstract: PB CMRDM3575 SOT-963
    Text: Product Brief CMRDM3575 N-Channel and P-Channel Complementary MOSFETs in the SOT-963 SOT-963 Typical Electrical Characteristic The new dual complementary CMRDM3575 consists of a 20V, 160mA N-Channel MOSFET and a 20V, 140mA P-Channel MOSFET. Packaged in the ultra miniature SOT-963 surface


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    CMRDM3575 OT-963 CMRDM3575 160mA 140mA OT-963 21x9x9 PB CMRDM3575 SOT-963 PDF

    Untitled

    Abstract: No abstract text available
    Text: Cell Type KR-SCH 1.6 Specifications 1600mAh Nominal Capacity 1.2V Nominal Voltage Charging Current D d H Dimensions of Bare Cell D d 42.0 ±0.3 1.654 ±0.012 22.0 ±0.3 0.866 ±0.012 10 0.394 mm inch mm inch mm inch 160mA Standard Charging Time H 53mA Trickle


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    1600mAh 160mA 48Hrs. 16Hrs. 1000Hz) 320mA CD010830 PDF

    3291G

    Abstract: Scans-00127386
    Text: UKU ABSOLUTE MAXIMUM RATINGS Forward Current Reverse Voltage Operating Temperature Storage Temperature 3291G LED BACKLIGHT FOR LCD DISPLAY 160mA 10V -20 to +70°C -30 to +80°C IF VR Topr Tstg ELECTRO-OPTICAL CHARACTERISTICS Ta=25°C PARAMETER SYMBOL MIN TYP MAX UNIT


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    3291G 160mA 3291G Scans-00127386 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4-Channel LED Driver with Phase Shift Control and 10-Bit Dimming Resolution ISL97687 Features The ISL97687 is a PWM controlled LED driver that supports 4 channels of LED current, for Monitor and TV LCD backlight applications. It is capable of driving 160mA per channel from a


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    10-Bit ISL97687 ISL97687 160mA FN7714 PDF

    Capacitor 10u 10V 1206

    Abstract: c3216x5r1e106m "LED Array" pnp 8 transistor array 2N3906 10uF CAPACITOR SS12 Schottky C3216X7R1A106M LM2698 transistor 2N3906 datasheet
    Text: 6-21-05 Rev. 3 LM2698 8 x 4 LED Array Driver L1 33µH 0.75A Vin = 5V +-10% D1 VIN SW FSLCT NC 10µF 10V CIN SHDN Q2 Q3 Q4 Q5 Q6 Q7 Q8 CO 10µ F 25V LM2698 PWM IN Q1 GND FB Vc CC RC R1 R2 R3 R4 R5 R6 R7 R8 Theory of Operation This circuit consists of a power section optimized to deliver a total of 160mA to the LED array.


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    LM2698 LM2698 160mA 2N3906 OT-23 SLF7032T330MR75-2 Capacitor 10u 10V 1206 c3216x5r1e106m "LED Array" pnp 8 transistor array 2N3906 10uF CAPACITOR SS12 Schottky C3216X7R1A106M transistor 2N3906 datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: ATTENTION HL-2012U57G24K22C1-12 GREEN OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features •500MMX11MM WATERPROOF SMD LIGHT RIBBON(24-LED). •PRINTED CIRCUIT BOARD THICKNESS:0.2MM •WORKING VOLTAGE:12V DC. •WORKING CURRENT: 160MA.


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    HL-2012U57G24K22C1-12 500MMX11MM 24-LEDï 160MA. LED22 LED23 LED24 C0061 SEP/21/2006 200mA PDF

    M103

    Abstract: M105
    Text: S4S1R 2–4 1.3 1.6 70 100 1 Frequency Range min Insertion Loss (max) VSWR (max) Isolation (min) Switching speed (max) CW RF power, operating (max) NOTES: DC Bias: (Standard) +5V +/-0.5V @ 160mA max -15V +/-3V @ 50mA max DC Bias: (-5 option) +5V +/-0.5V @ 200mA max


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    200mA 160mA MIL-G-45204 MIL-C-39012 /-12V -12-RC" -2-12-RC" M103 M105 PDF