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    Samtec Inc DW-16-08-F-S-211

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    Samtec Inc DW-16-08-F-S-248

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    Samtec Inc DW-16-08-F-S-329

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    Samtec Inc DW-16-08-F-S-286

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    Samtec Inc DW-16-08-F-S-330

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    1608FS Datasheets Context Search

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    MCR03J102

    Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
    Text: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were


    Original     		SGA-8343 AN-061 1575MHz) MCR03J102 MCR03*J102 MCH185A150J MCR03*J102 resistor CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z PDF

    XFMR1 transformer

    Abstract: XFMR1 murata SAW
    Text: Preliminary SF2076B • • • • • Designed for 802.16 and WIMAX Receiver IF Application Low Insertion Loss 5.0 X 7.0 mm Surface-Mount Case Differential Input and Output Complies with Directive 2002/95/EC RoHS Pb 464.00 MHz SAW Filter Absolute Maximum Ratings


    Original     		SF2076B 2002/95/EC SMP-03 SF2076B-041806 XFMR1 transformer XFMR1 murata SAW PDF

    BLM18HE152SN1D

    Abstract: CL10B103KBNC SGL0163Z 800130 SGL-0163 HEMT MMIC POWER AMPLIFIER MMIC SOT 363 marking CODE 81 marking CODE 81 MMIC SOT 363 68 S3V MMIC SOT 363 marking CODE 81 low noise
    Text: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier


    Original     		SGL0163Z 100MHz 1300MHz OT-363 SGL0163Z 50GHz. BLM18HE152SN1D CL10B103KBNC 800130 SGL-0163 HEMT MMIC POWER AMPLIFIER MMIC SOT 363 marking CODE 81 marking CODE 81 MMIC SOT 363 68 S3V MMIC SOT 363 marking CODE 81 low noise PDF

    FPD7612P70

    Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz 11GHz) 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R PDF

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC1608 High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1608 is a 500ksps, 16-bit sampling A/D converter that draws only 270mW from ±5V supplies. This high performance device includes a high dynamic range


    Original     		LTC1608 16-Bit, 500ksps 500ksps, 16-bit 270mW 500ksps 100dB 270mW PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: 44 TYPE M ultilayer Chip Inductors 1608FS The LL1608-FS Series is a miniature multilayer ceramic chip inductor. Toko's proprietary laminated ceramic material pro­ vides high SRF, excellent Q, and superior reliability. The FS al­ lows up to 3 times the current handling o f standard multilayers.


    OCR Scan     		LL1608FS LL1608-FS LL1608 800MHz 100MHz HP8719D VP-2811A PDF

    TDMA simulation ADS

    Abstract: ATF-50189 BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305
    Text: ATF-50189 High Linearity 900 MHz Amplifier Avago Technologies Enhancement Mode Psuedomorphic HEMT in SOT 89 Package Application Note 5293 Introduction Application Guidlines Avago Technologies ATF-50189 is an enhancement mode PHEMT designed for high linearity and medium


    Original     		ATF-50189 800MHz 900MHz 2400MHz 900MHz AV01-0365EN TDMA simulation ADS BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305 PDF

    DC generator

    Abstract: MAX2385EVKIT MAX2386EVKIT
    Text: 19-2205; Rev 0; 10/01 MAX2385/MAX2386 Evaluation Kits Features ♦ +2.7V to +3.6V Operation ♦ 50Ω SMA Inputs and Outputs on RF, IF, and LO Ports for Easy Testing ♦ All Matching Components Included ♦ Fully Assembled and Tested Ordering Information PART


    Original     		MAX2385/MAX2386 MAX2385EVKIT MAX2386EVKIT 1000pF GRM36X7R102K050A GRM36COG070B050A GRM36COG0R5B050A DC generator MAX2385EVKIT MAX2386EVKIT PDF

    XFMR1 transformer

    Abstract: XFMR2 transformer XFMR1 SMI7035 Toko inductor TOKO INDUCTORS TOKO 7.5 MHz SAW filter TOKO 707 GRM1885C1H6R8CZ01D GRM1885C1HR50CZ01D
    Text: Preliminary SF2076B • • • • • Designed for 802.16 and WIMAX Receiver IF Application Low Insertion Loss 5.0 X 7.0 mm or Single Ended Surface-Mount Case Differential Input and Output Complies with Directive 2002/95/EC RoHS Pb 464.00 MHz SAW Filter


    Original     		SF2076B 2002/95/EC SMP-03 SF2076B-062106 XFMR1 transformer XFMR2 transformer XFMR1 SMI7035 Toko inductor TOKO INDUCTORS TOKO 7.5 MHz SAW filter TOKO 707 GRM1885C1H6R8CZ01D GRM1885C1HR50CZ01D PDF

    g14a

    Abstract: TC7SH08FUTE85L LTC1604 LTC1608 LTC1608ACG LTC1608CG 1608FS 1m1608
    Text: LTC1608 High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO A Complete, 500ksps 16-Bit ADC 90dB S/ N+D and –100dB THD (Typ) Power Dissipation: 270mW (Typ) No Pipeline Delay


    Original     		LTC1608 16-Bit, 500ksps 500ksps, 16-bit 270mW 500ksps 100dB 270mW g14a TC7SH08FUTE85L LTC1604 LTC1608 LTC1608ACG LTC1608CG 1608FS 1m1608 PDF

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343 PDF

    Frequency Generator 1MHz

    Abstract: toko VARIABLE CAPACITORS GRM39X7R104K016A MAX2720 MAX2720EVKIT MAX2721 MAX2721EVKIT
    Text: 19-1715; Rev 0; 4/00 MAX2720/MAX2721 Evaluation Kits Features ♦ Easy MAX2720/MAX2721 Evaluation ♦ All Critical Peripheral Components Included ♦ SMA Input and Output Signal Connectors ♦ RF Ports Matched to 1900MHz MAX2720 ♦ RF Ports Matched to 2315MHz (MAX2721)


    Original     		MAX2720/MAX2721 1900MHz MAX2720) 2315MHz MAX2721) MAX2720EVKIT MAX2721EVKIT MAX2720/MAX2721 470pF Frequency Generator 1MHz toko VARIABLE CAPACITORS GRM39X7R104K016A MAX2720 MAX2720EVKIT MAX2721 MAX2721EVKIT PDF

    BLM18HE152SN1D

    Abstract: BLM18HE152SN CL10B103KB BLM18HE152 CL10B103KBNC SGL0163Z 80013 CL10B103K 9C06031A0R00
    Text: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier


    Original     		SGL0163Z 100MHz 1300MHz SGL0163Z OT-363 50GHz. BLM18HE152SN1D BLM18HE152SN CL10B103KB BLM18HE152 CL10B103KBNC 80013 CL10B103K 9C06031A0R00 PDF

    CL10B103KBNC

    Abstract: No abstract text available
    Text: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier


    Original     		SGL0163Z 100MHz 1300MHz OT-363 SGL0163Z 50GHz. CL10B103KBNC PDF

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot PDF

    samsung bluetooth

    Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
    Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to


    Original     		SGA-8343 OT-343 SGA8343ZPCK-EVB2 SGA8343ZPCK-EVB3 SGA8343ZPCK-EVB4 DS100111 samsung bluetooth SGA8343Z MCR03*J102 CL10B104KONC SGA-8343Z 8343 PDF