16000B Search Results

Contextual Info: G M 23C 16000B LG Semicon Co.,Ltd. 2M x 8 / IM x 16 BIT CMOS M ASK ROM Description Pin Configuration The 16000B high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select.

D27 diode

Abstract: d28 diode ANH002A on 4006 16006
Contextual Info: PUMA2 Pinout FLASH and UVEPROM Summary One of the key features of the PUMA2 Pin Grid Array product range is its well defined upgrade path. Pin Definition Assuming the relevant address lines are routed on the system board, upgrade may be achieved by simply removing a device and replacing it with the next generation part.

d28 diode

Abstract: 4000B ANH003A D-13
Contextual Info: PUMA 67 / 77 Pinout SRAM Summary One of the key features of the PUMA Pinned Uncommitted Memory Array product range is its well defined upgrade path. Pin Definition Assuming the relevant address lines are routed on the system board, upgrade may be achieved by simply removing a device and replacing it with the next generation part.

k i a 431 a 515

Abstract: 416C 4103B
Contextual Info: TABLE OF CONTENTS I. General Information 1. Introduction - 13 2. Product Guide —- 3. Ordering Information — . — 21 . - . -.- . 25 II. Data sheets 1M DR AM

CACP

Contextual Info: DRAM M ODULE KM M 372C32 0 8 0 B K Buffered 32Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 372C32 0( 8 ) 0 B K Revi si on Hi st or y Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

D28A0

Abstract: pinout 4001 ANH001A
Contextual Info: PUMA2 Pinout SRAM and EEPROM Summary One of the key features of the PUMA Pinned Uncommited Memory Array product range is its well defined upgrade path. Pin Definition Assuming the relevant address lines are routed on the system board, upgrade may be achieved by simply removing a device and replacing it with the next generation part.

Contextual Info: KMM372V160 8 0BK/BS DRAM MODULE KMM372V160(8)0BK/BS Fast Page Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • T he S am sung K M M 3 7 2 V 1 6 0 (8 )0 B is a 16M x72bits D ynam ic Part Identification Part num ber

KM41C16000BK

Abstract: KMM53616000AK
Contextual Info: DRAM MODULE KMM53616000A KG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G ENER AL D ESCRIPTIO N FEATURES T h e S a m s u n g K M M 5 3 6 1 6 0 0 0 A K is a 16M b it x 36 • P a ri Id e n tificatio n D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . The

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

km416c254

Contextual Info: MEMORY ICs FUNCTION GUIDE P o w er D ensity' 4M B/W 256KX16 5V±10% KM416C256B# 50/60/70 Fast Page KM416C256BL# J:40 Pin SOJ T:40 Pin TSOP-ll Forward KM416C254S# EDO KM416C254BL# 3.3V±0.3V KM416V256B# 60/70/80 Fast Page KM416V25SBL# KM416V254B# EDO KM416V254BL#

Contextual Info: KM41 V 160 00 BK CMOS D R A M ELECTRONICS 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

UM9902

Abstract: CMX990 UM990 Hyperstone EV9900A ST10 ST11 EV9900 pwr 621 EV9902
Contextual Info: EV9902 CML Microcircuits Interface Kit User Manual COMMUNICATION SEMICONDUCTORS UM9902/3 July 2009 Provisional Issue Features • Provides Immediate Evaluation and Experimentation with the CMX990 via the EV9900A EvKit • Calculates the Register Values to

4000B

Abstract: ANH006A
Contextual Info: PUMA68 COTS Pinout SRAM Summary One of the key features of the PUMA (Pinned Uncommitted Memory Array) product range is its well defined upgrade path Pin Definition The PUMA68 product range provides a lower cost, footprint compatible, alternative to the well

Contextual Info: DRAM MODULE KM M372V320 8 0B K4 KMM372V320(8)0BK4 Fast Page Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 3 7 2 V 3 2 0 (8 )0 B is a 3 2 M x7 2 b its D ynam ic • RAM high d e n sity

Contextual Info: DRAM MODULE KMM372V320 8 0BS1 KMM372V320(8)0BS1 Fast Page Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION T he S am sung FEATURES K M M 372V 320(8)0B S 1 is a 32 M x72 bits • Part Identification D ynam ic RAM high de n sity m em o ry m odule. T he S am sung

Contextual Info: KMM372V160 8 0BK/BS DRAM MODULE KMM372V160(8)0BK/BS Fast Page Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • T he S am sung K M M 3 7 2V 1 60 (8 )0B is a 16M x72bits D ynam ic Part Identification Part num ber