16-MEGABIT X 16 OR X 8 Search Results

M27C160

Contextual Info: r Z J SGS-THOMSON ^ 7 # HDfêMIlLKgTIKORIDtgi M27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ABBREVIATED DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE LOW POWER CONSUMPTION - Active Current 70mA at 8MHz

Contextual Info: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V

M27C160

Abstract: Q15A
Contextual Info: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V

Contextual Info: M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

AN620 datasheet

Abstract: M27C160 Q15A
Contextual Info: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V

Contextual Info: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM DATA BRIEFING FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V

M27V160

Abstract: 32 megabit 16 bit
Contextual Info: M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

Contextual Info: SGS-THOMSON M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 _ UV EPROM and OTP EPROM PR ELIM IN A R Y DATA • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit M ASK ROM REPLACEMENT

M27C160

Abstract: ZJA16
Contextual Info: SGS-THOMSON Kiöa Mi[LllOT o K!]ö©S M27C160 16 Megabit (2Meg x 8 or 1Meg x 16) UV EPROM and OTP ROM • FAST ACCESS TIME - 100ns (Random Address) ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70mA at 8MHz

Contextual Info: S G S -1 H 0 M S 0 N RfflQ @HLIiOT®RD[l©i M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP ROM • FAST ACCESS TIME - 100ns (Random Address) ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION

Z3A15

Abstract: M27C160 Z3A13
Contextual Info: S G S -T H O M S O N B^Q »[l[L[l©U^ ô R!]a©i M27C160 16 Megabit (2Meg x 8 or 1Meg x 16) UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION - Active Current 70mAat 8MHz

27c160

Contextual Info: rZ 7 SGS-THOMSON RfflD g[^@ll[L[i(glT^ ia(gS M27C160 CMOS 16 Megabit (2M x 8 or 1M x 16 UV EPROM ADVANCE DATA • FAST ACCESS TIME: 150ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit, 42 Pin, MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70mA at 8MHz

Contextual Info: /TT SGS-THOMSON ^ 7 # . K !t 0 g ilL i© ìn iS @ K 5 D ( g § M 2 7 C 1 6 0 16 Megabit (2Meg x 8 or 1Meg x 16) UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION

M27C

Contextual Info: Æ T SGS-THOMSON M27C160 * 7 1 . M O » iIL iO T [iM CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM A D VA N CE DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE LOW POWER CONSUMPTION - Active Current 70mA at 8MHz

Contextual Info: HN27C4000 Series Preliminary 4M 256K x 16-bit or 512K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4000 is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 524,288 x 8-bits or as 262,144 x 16-bits.

Contextual Info: r= 7 S G S -T H O M S O N ^ 7 # . IM O œ ilL iO T tM O tg M 27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM REPLACEMENT

M27C

Abstract: 27C160 M27C16
Contextual Info: 52E J> m TTETSa? 0037bbb TflO • SGTH T~%~I3 - 2 e? S G S - 1H O M S O N S fi S - T H O M S O N L iM M Q § M 27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ADVANCE DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE

27V800

Contextual Info: SGS-THOMSON M27V800 LOW VOLTAGE 8 Megabit 1 Meg x 8 or 512K x 16 _ UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT

Contextual Info: ADVANCE INFORMATION A M D ii Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin

63-Ball

Abstract: fbe063-63-ball ei 306 20 64
Contextual Info: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation

o/V29C51400T/V29C51

Contextual Info: MOSEL VITELIC PRELIMINARY V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with

Contextual Info: A M D J1 ADVANCE INFORMATION Am29PL160C 16 Megabit 2 M x 8-Bit/I M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin

M27C160

Abstract: M27V160 M27W160 Q15A
Contextual Info: M27V160 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION 44 42 – Active Current 70mA at 8MHz

Contextual Info: S75WS-N Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Flash or 1 Gb ORNAND Flash Data Sheet PRELIMINARY